Texas Instruments BQ24350DSGR

Overview

BQ24350DSGR from Texas Instruments is a charger front-end protection IC with integrated P-FET, designed for Li-ion battery charging circuits in portable electronics. It provides input over-voltage (6.17 V threshold), over-current (1.2 A typ), and battery over-voltage (4.35 V) protection, and supports up to 1 A load current in LDO mode. It operates across 4.4–15 V ACIN input and features soft-start/soft-stop to suppress inrush and voltage spikes.

For engineers reviewing the BQ24350DSGR datasheet, BQ24350DSGR pinout, BQ24350DSGR application, or BQ24350DSGR equivalent, key selection criteria include its 2 mm × 2 mm WSON-8 package, integrated gate drive interface (GATDRV), dual-output architecture (OUT and CHGIN), thermal shutdown (150 °C), and compatibility with host-controlled charging systems requiring robust fault response and low quiescent current (500 µA).

Technical Context

The BQ24350DSGR implements a dual-FET protection architecture with Q1 (ACIN→OUT) and Q2 (ACIN→CHGIN), controlled by internal logic that monitors ACIN, VBAT, and current via ISENSE path. Its protection triggers-input OVP, OCP, battery OVP, and thermal shutdown-are independently timed with deglitch (e.g., 256 µs OVP, 8.2 ms OCP) and recovery delays (e.g., 8.2 ms OVP, 131 ms OCP).

In LDO mode, CHGIN regulates to 5.5 V (typ) when ACIN exceeds VO(REG); below VO(REG), CHGIN tracks ACIN minus R_DS(on) drop. Sleep mode activates when ACIN falls below 55 mV (VSENTRY), disabling both FETs regardless of GATDRV state-enabling diode-free reverse-blocking behavior without external components.

Key Specifications

Pinout & Package

Package: 2 mm × 2 mm, 8-pin WSON (DSG) with exposed thermal pad electrically connected to GND. Requires soldering thermal pad to PCB ground plane for thermal performance (R_θJA = 75 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar charger front-end protection applications.

Compared with BQ24350DSGR, BQ24352DSGR offers relaxed OVP headroom for higher-input adapters, while TPS259211DRCR reduces complexity and conduction loss but removes battery-side protection and host-controlled regulation-making it suitable only for simpler, non-battery-integrated power paths.

Availability

BQ24350DSGR is available at Aetrix Electronics and suitable for mobile phone charging circuits, low-power handheld devices, and current-limited host power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for BQ24350DSGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on reliability, precision, and power efficiency.

The BQ24350DSGR belongs to TI's battery management IC portfolio, engineered specifically for front-end protection in Li-ion charging systems where integration, fault robustness, and space-constrained layout are critical design priorities.

FAQ

What is the primary function of the BQ24350DSGR in a Li-ion charging system?

The BQ24350DSGR serves as a front-end protection IC that safeguards downstream components-including host charger controllers and Li-ion batteries-from input over-voltage, over-current, battery over-voltage, and thermal faults. It integrates dual P-FETs, enables LDO-mode regulation on CHGIN, and supports host control via GATDRV-making it a complete, compact solution for portable device charging architectures.

Does the BQ24350DSGR require external components to implement battery over-voltage protection?

No, the BQ24350DSGR includes internal battery over-voltage detection set to 4.35 V with 250 mV hysteresis. However, TI recommends connecting the VBAT pin through a 100–470 kΩ resistor (RBAT) to the battery pack positive terminal-not directly-to prevent hazardous voltage transfer during IC failure. Direct connection is unsafe and violates recommended practice.

Can the BQ24350DSGR operate without a host controller connected to GATDRV?

Yes-the BQ24350DSGR functions autonomously: GATDRV is an optional input. When left unconnected or held low, internal logic still enables FETs after UVLO and soft-start. However, host control via GATDRV allows dynamic enable/disable of the charging path, which is essential for advanced charge sequencing and system-level power management in smartphones and wearables.

What is the purpose of the dual ACIN and OUT pins on the BQ24350DSGR?

The dual ACIN (Pins 1,2) and dual OUT (Pins 7,8) configuration reduces current density per bond wire and PCB trace, lowering resistive losses and thermal stress. This design supports the full 1 A load current while maintaining low R_DS(on) (≤685 mΩ) and enabling compact 2 mm × 2 mm layout-critical for space-constrained mobile applications where thermal and electrical performance must coexist.

How does the BQ24350DSGR achieve "diode emulation" behavior in sleep mode?

The BQ24350DSGR enters sleep mode when ACIN falls below ~55 mV (VSENTRY), turning off both internal P-FETs regardless of GATDRV state. Upon ACIN rise above ~90 mV (VSEXIT), it resumes operation. This automatic, voltage-threshold-based switching replicates the forward conduction and reverse blocking of a Schottky diode-eliminating the need for an external diode and its associated 0.3–0.4 V forward drop in the charging path.