Texas Instruments BQ24352DSGR

Overview

BQ24352DSGR from Texas Instruments is a dedicated over-voltage and over-current charger front-end protection IC with integrated P-FET, designed for Li-ion battery charging circuits in portable electronics. It provides input OVP (7.1 V threshold), input OCP (1.2 A typical), battery OVP (4.35 V), thermal shutdown (150 °C), and LDO-mode CHGIN output regulation (5.5 V). It operates in mobile phone and low-power handheld device charging paths where robust fault protection and host-controlled gate drive are required.

For engineers reviewing the BQ24352DSGR datasheet, BQ24352DSGR pinout, BQ24352DSGR application, or BQ24352DSGR equivalent, this page delivers verified electrical parameters, validated 8-pin WSON package mapping, confirmed pin functions including GATDRV and ISENS-capable OUT, real-world protection timing (tDGL(OVP) = 256 µs), and two field-validated alternative parts with documented functional trade-offs.

Technical Context

The BQ24352DSGR implements dual-stage protection logic: input voltage monitoring triggers fast OVP cutoff via internal P-FET Q1/Q2 after 256 µs deglitch time, while battery voltage sensing at VBAT enables independent 4.35 V OVP with 250 mV hysteresis. Its gate drive interface (GATDRV) accepts external host control signals to regulate charge FET conduction, enabling dynamic current limiting and soft-start/soft-stop sequencing.

It integrates two power P-FETs - one between ACIN and OUT (R_DS(on) = 685 mΩ max), another between ACIN and CHGIN (R_DS(on) = 495 mΩ max) - supporting up to 1 A load current with LDO-mode CHGIN output regulated to 5.5 V. The device enters sleep mode when ACIN falls below 55 mV (VSENTRY), eliminating need for external reverse-blocking diodes.

Key Specifications

Pinout & Package

Package: 2 mm × 2 mm, 0.5 mm pitch, 8-pin WSON (DSG) with exposed thermal pad electrically connected to GND. Requires thermal vias to PCB ground plane per TI SLUA271 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar charger front-end protection applications.

Compared with bq24350DSGR, BQ24352DSGR adds 0.93 V OVP headroom for higher-voltage adapters while retaining identical footprint and host interface; versus TPS25940LARVRR, it trades programmability and wide VIN for integrated battery OVP and GATDRV control-critical for host-managed Li-ion charging architectures.

Availability

BQ24352DSGR is available at Aetrix Electronics and suitable for smartphone charging protection, tablet host power management, wearable battery safety modules, and USB-powered portable instruments requiring stable component supply across production lifecycles.

Supply support for BQ24352DSGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of experience in battery management and portable power solutions.

The bq243xx family was engineered specifically for front-end protection in Li-ion charging systems, integrating dual P-FETs, precision OVP/OCP, battery voltage supervision, and host gate control to replace discrete protection circuits in space- and reliability-critical mobile devices.

FAQ

What is the exact input over-voltage protection threshold for BQ24352DSGR?

The BQ24352DSGR has a factory-trimmed input OVP threshold of 7.1 V (typical), with a guaranteed range of 6.9 V to 7.3 V. This value is specific to the bq24352 variant and differs from the bq24350's 6.17 V threshold. The BQ24352DSGR uses this higher threshold to accommodate transient overshoots from 9 V adapters while maintaining safety margins against 30 V absolute maximum ratings.

Does BQ24352DSGR require an external resistor on the VBAT pin?

Yes, BQ24352DSGR requires an external resistor (RBAT) between the battery positive terminal and the VBAT pin. TI recommends 100 kΩ to 470 kΩ to limit fault current to <270 µA if ACIN voltage appears on VBAT due to internal failure. Connecting VBAT directly to the battery is unsafe; grounding VBAT disables battery OVP entirely.

Can BQ24352DSGR operate without a host controller driving GATDRV?

No - BQ24352DSGR relies on an external host controller to drive the GATDRV pin to enable or modulate the integrated P-FETs. Without a valid gate drive signal, the device remains in high-impedance state and cannot pass current from ACIN to OUT or CHGIN. It is not autonomous; host control is mandatory for functional operation.

What is the thermal pad connection requirement for BQ24352DSGR?

The exposed thermal pad of the BQ24352DSGR is internally connected to GND and must be soldered to a PCB copper pour tied to the system ground plane. At least four thermal vias (0.3 mm diameter) are recommended beneath the pad. Using the pad as sole GND connection is prohibited; the Pin 3 GND must also be routed separately to ensure low-impedance return path and reliable thermal performance.

How does BQ24352DSGR implement soft-start and soft-stop functionality?

BQ24352DSGR executes soft-start by gradually ramping gate drive to its internal P-FETs during power-on, limiting inrush current and suppressing LC resonance from adapter cable inductance and input capacitance. During fault shutdown (e.g., OVP), it performs soft-stop by slowly reducing GATDRV voltage over ~100 µs to avoid abrupt current interruption and associated voltage spikes that could damage downstream analog ICs.