Texas Instruments BQ24352DSGT

Overview

BQ24352DSGT from Texas Instruments is an over-voltage and over-current charger front-end protection IC with integrated P-FET, designed for Li-ion battery charging circuits in portable electronics. It provides input OVP (7.1 V), input OCP (1.2 A typ), battery OVP (4.35 V), thermal shutdown (150 °C), and LDO-mode CHGIN output regulation (5.5 V). It operates in mobile phone power path management where AC adapter surges or host charger faults must be blocked before reaching baseband ICs.

For engineers reviewing the BQ24352DSGT datasheet, BQ24352DSGT pinout, BQ24352DSGT application, or BQ24352DSGT equivalent, this page delivers verified functional role, exact protection thresholds, validated 8-pin WSON package mapping, confirmed soft-start/soft-stop timing behavior, and real-world host-controlled charger interface constraints - all critical for safe power path design in space-constrained handheld devices.

Technical Context

The BQ24352DSGT implements dual-MOSFET (Q1 + Q2) power path control with independent gate drive logic. Its input OVP threshold is fixed at 7.1 V (±0.2 V), with 150 mV hysteresis and 256 µs deglitch time, enabling robust rejection of transient adapter spikes without false triggering. The device uses analog comparators with internal reference voltages to monitor ACIN, VBAT, and current-sense signals, feeding a state machine that controls FET switching, sleep entry/exit, and fault recovery sequencing.

It supports host-controlled charging via GATDRV pin, allowing external charger ICs to regulate charge voltage/current while BQ24352DSGT enforces hard safety limits. CHGIN operates as a regulated 5.5 V LDO output (±167 mV) with 250–495 mΩ on-resistance, delivering up to 1 A load current with built-in short-circuit and thermal protection - eliminating need for discrete reverse-blocking diodes in compact designs.

Key Specifications

Pinout & Package

Package: 2 mm × 2 mm, 8-pin WSON (DSG) with exposed thermal pad electrically connected to GND. Requires thermal vias to inner ground plane per TI SLUA271 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar charger front-end protection applications.

Compared with BQ24350DSGT, the BQ24352DSGT offers higher OVP immunity for noisy 9–12 V adapters, while TPS259211DRCR provides lower on-resistance but lacks battery safety features and integrated host power - making it unsuitable as a direct functional substitute in charger front-end roles.

Availability

BQ24352DSGT is available at Aetrix Electronics and suitable for mobile phone power path protection, wearable charger interface design, and industrial handheld terminal battery management requiring stable component supply across production lifecycles.

Supply support for BQ24352DSGT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in battery management and power path ICs.

The BQ24352DSGT belongs to TI's bq243xx family of charger front-end protectors, engineered specifically to replace discrete protection components in Li-ion charging systems for space-constrained portable electronics.

FAQ

What is the exact input over-voltage protection threshold for BQ24352DSGT?

The BQ24352DSGT has a fixed input OVP threshold of 7.1 V (typical), with a guaranteed range of 6.9 V to 7.3 V per the SLUS943A datasheet. This value is specific to the BQ24352 variant and differs from the BQ24350DSGT (6.17 V). The threshold is internally trimmed and does not require external components. Recovery occurs after the input falls below 6.95 V (7.1 V – 150 mV hysteresis) and remains stable for 8.2 ms.

Can BQ24352DSGT operate without connecting the VBAT pin?

Yes - the BQ24352DSGT can operate without VBAT connection if battery over-voltage protection is not required. In that case, the VBAT pin must be tied directly to GND per the datasheet. Leaving VBAT floating is not allowed, as it may cause undefined behavior in the BOVP comparator. When used, VBAT must connect through a 100–470 kΩ resistor (RBAT) to pack+, not directly, to limit fault current during IC failure.

What is the purpose of the GATDRV pin on BQ24352DSGT?

The GATDRV pin on BQ24352DSGT accepts a gate drive signal from an external host charger IC to control the integrated P-FETs (Q1/Q2). It enables host-based regulation of charge voltage and current while BQ24352DSGT enforces hard safety limits (OVP/OCP/BOVP). GATDRV is an input-only pin with ≤1 µA leakage; it does not source or sink significant current and must be driven actively by the host controller.

How does BQ24352DSGT implement soft-start and soft-stop functionality?

BQ24352DSGT implements soft-start by gradually ramping gate drive during power-on to limit inrush current and suppress LC resonance between adapter cable inductance and input capacitance. Soft-stop activates during fault conditions (OVP/OCP/BOVP): instead of abrupt FET turn-off, gate drive is reduced linearly over ~100 µs to dissipate stored energy smoothly and avoid damaging voltage spikes at OUT or CHGIN pins - a key differentiator from basic eFuses.

Is BQ24352DSGT pin-compatible with BQ24350DSGT?

Yes - BQ24352DSGT and BQ24350DSGT share identical 8-pin WSON (DSG) package, pinout, footprint, and electrical SOA. The only functional difference is the input OVP threshold (7.1 V vs. 6.17 V); all other specifications - including CHGIN regulation, thermal shutdown, sleep thresholds, and timing parameters - are identical. No PCB changes are required when substituting between these two variants.