Texas Instruments BQ294582DRVR

Overview

BQ294582DRVR from Texas Instruments is a secondary overvoltage protection IC for 2- or 3-series Li-ion battery packs, featuring fixed 4.225 V OVP threshold, ±10 mV accuracy, 4 s fault detection delay, 1 µA supply current (VCELL < VPROTECT), and independent per-cell voltage monitoring via V1/V2/V3 inputs.

For engineers reviewing the BQ294582DRVR datasheet, BQ294582DRVR pinout, BQ294582DRVR application, or BQ294582DRVR equivalent, this page delivers verified technical context, real-world implementation constraints, thermal behavior at –40°C to +110°C, and validated alternative options for second-level battery pack protection design.

Technical Context

The BQ294582DRVR implements independent analog sensing of three cell voltages using internal multiplexer-based comparison against a factory-programmed 4.225 V overvoltage threshold. It triggers a high-level open-drain output after a fixed 4 s delay when any monitored cell exceeds VOV.

Its functional architecture includes integrated delay timer, hysteresis (300 mV typ), low-leakage input circuitry (<100 nA per cell), and direct drive capability for external N-channel FETs used in fuse-blowing circuits - all operating across –40°C to +110°C ambient temperature range.

Key Specifications

Pinout & Package

Package: 6-pin WSON (DRV), 2.00 mm × 2.00 mm body size, exposed thermal pad (PWRPAD) requiring connection to VSS on PCB for thermal and electrical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar overvoltage protection applications.

Compared with BQ294582DRVR, BQ294502DRVR raises the overvoltage threshold by 125 mV-increasing safety margin for aging cells but reducing headroom for high-precision 4.20 V max charging-while BQ294592DRVR offers a 75 mV compromise ideal for mixed-cell or extended-cycle deployments.

Availability

BQ294582DRVR is available at Aetrix Electronics and suitable for tablet battery packs, power tool battery management systems, and portable medical instrument power supplies requiring stable component supply, long-lifecycle support, and AEC-Q200-aligned reliability validation.

Supply support for BQ294582DRVR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies with over 50 years of innovation in battery safety ICs.

The BQ2945xy family was designed specifically for secondary overvoltage protection in multi-cell Li-ion battery packs, delivering factory-trimmed accuracy, ultra-low power, and robust thermal performance in compact WSON packages.

FAQ

What is the exact overvoltage protection threshold of the BQ294582DRVR?

The BQ294582DRVR has a factory-programmed overvoltage protection threshold of 4.225 V with ±10 mV accuracy at 25°C. This value is fixed and not adjustable. Temperature drift adds up to ±54 mV across –40°C to +110°C, resulting in a total specified range of 4.171 V to 4.279 V under extreme conditions. The BQ294582DRVR uses this precise threshold to initiate secondary protection before cell degradation begins.

Does the BQ294582DRVR support both 2-cell and 3-cell Li-ion battery configurations?

Yes, the BQ294582DRVR supports both 2-series and 3-series Li-ion battery configurations. For 2-cell use, the V3 pin is connected to V2; for 3-cell use, V1, V2, and V3 are each connected across individual cell terminals. All three inputs operate independently, and the device triggers OUT if any monitored cell exceeds 4.225 V. The BQ294582DRVR maintains full accuracy and timing integrity in either configuration.

How does the BQ294582DRVR drive an external MOSFET, and what are its output specifications?

The BQ294582DRVR drives the gate of an external N-channel MOSFET via its open-drain OUT pin. When triggered, OUT pulls high to VDD – 0.2 V (min) at –40°C to +110°C, capable of sourcing ≥4.5 mA short-circuit current. It exhibits 2–5 kΩ output impedance and ≤5 µs rise time into 1 nF load. The BQ294582DRVR's output stage is optimized to reliably turn on common logic-level NMOS devices used in fuse-blow circuits.

What is the purpose and behavior of the PWRPAD thermal pad on the BQ294582DRVR?

The PWRPAD on the BQ294582DRVR is an exposed copper pad on the underside of the 6-pin WSON package that must be soldered to a VSS-connected PCB copper area. It provides both thermal conduction (RθJB = 110.7°C/W) and low-impedance grounding essential for voltage reference stability and noise immunity. Failure to connect PWRPAD to VSS degrades OVP accuracy and may cause erratic behavior. The BQ294582DRVR relies on this pad for safe, repeatable operation across its full temperature range.

Can the BQ294582DRVR be used without external RC filtering components?

No, the BQ294582DRVR requires external RC filters on all sense inputs (V1/V2/V3) and VDD per TI's recommended design. RIN values between 100 Ω and 4.7 kΩ and CIN values between 0.1 µF and 1 µF are mandatory to suppress noise-induced false trips and ensure stable voltage monitoring. Omitting these components violates the BQ294582DRVR's validated layout and risks premature or missed overvoltage detection in real-world EMI environments.