Texas Instruments BQ294582DRVT

Overview

BQ294582DRVT from Texas Instruments is a secondary overvoltage protection IC for 2- or 3-series Li-ion battery packs, featuring fixed 4.225 V OVP threshold, ±10 mV accuracy, 4 s fixed delay, 1 µA quiescent current, and 6-pin SON package. It independently monitors each cell voltage and drives an external N-channel FET to trigger fuse blow during overvoltage events in portable power tools and tablets.

For engineers reviewing the BQ294582DRVT datasheet, BQ294582DRVT pinout, BQ294582DRVT application, or BQ294582DRVT equivalent, key selection criteria include OVP threshold tolerance, cell count support (2S/3S), thermal pad connection requirement, low-leakage input design (<100 nA per cell), and compatibility with NMOS-based protection FETs in high-reliability battery management systems.

Technical Context

The BQ294582DRVT implements independent analog voltage sensing across three differential inputs (V1–VSS, V2–V1, V3–V2) using internal multiplexer architecture. Its fixed 4.225 V overvoltage threshold is factory-programmed with ±10 mV accuracy at 25°C and exhibits ≤54 mV drift over –40°C to +110°C.

Upon detection of any cell exceeding VOV, the device activates a fixed 4 s delay timer before asserting high-level OUT signal to drive an external NMOS gate. The output resets low only when all cell voltages fall below VOV minus 250–400 mV hysteresis, ensuring stable fault recovery without oscillation.

Key Specifications

Pinout & Package

Package: 6-pin WSON (DRV), 2.00 mm × 2.00 mm body size with exposed thermal pad (PWRPAD) requiring PCB connection to VSS for proper operation and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar overvoltage protection applications.

Compared with BQ294582DRVT, BQ294592DRVT offers a 75 mV higher OVP setpoint for enhanced headroom in high-accuracy charging systems, while BQ294502DRVT provides 125 mV additional margin-both retain identical timing, leakage, and thermal behavior, enabling drop-in replacement where threshold adjustment suffices.

Availability

BQ294582DRVT is available at Aetrix Electronics and suitable for power tools, tablets, notebook computers, portable medical devices, and industrial battery packs requiring stable component supply, long-lifecycle support, and automotive-grade thermal reliability.

Supply support for BQ294582DRVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions, with leadership in battery management, power conversion, and precision analog ICs.

The BQ2945xy family was designed specifically for secondary overvoltage protection in multi-cell Li-ion battery packs, emphasizing ultra-low power, high accuracy, and robust fault handling in space- and safety-critical portable applications.

FAQ

What is the exact overvoltage protection threshold of the BQ294582DRVT?

The BQ294582DRVT has a factory-programmed overvoltage protection threshold of 4.225 V with ±10 mV accuracy at 25°C. This value is fixed and not adjustable. Temperature drift remains within ±54 mV across the full –40°C to +110°C operating range, ensuring consistent secondary protection behavior in demanding environments where the BQ294582DRVT is deployed.

Does the BQ294582DRVT support both 2-cell and 3-cell Li-ion battery configurations?

Yes, the BQ294582DRVT supports both 2-series and 3-series Li-ion battery configurations. In 2S mode, the V3 pin is shorted to V2; in 3S mode, V1, V2, and V3 connect to the positive terminals of Cells 1, 2, and 3 respectively. All configurations use the same BQ294582DRVT device without modification, leveraging its independent differential sensing architecture across (V1–VSS), (V2–V1), and (V3–V2).

How does the BQ294582DRVT interface with the external MOSFET for fuse blowing?

The BQ294582DRVT drives the gate of an external N-channel MOSFET via its open-drain OUT pin. When any monitored cell exceeds 4.225 V for 4 s, OUT transitions high, turning on the NMOS and creating a low-impedance path from fuse to Pack–. This allows battery or charger current to blow the fuse. The BQ294582DRVT maintains this state until all cells fall below (4.225 V – hysteresis), ensuring definitive fault isolation.

Is the thermal pad (PWRPAD) on the BQ294582DRVT required to be connected?

Yes, the PWRPAD on the BQ294582DRVT must be electrically and thermally connected to the VSS net on the PCB. Texas Instruments explicitly states this connection is mandatory for proper operation and thermal performance. Failure to connect PWRPAD may result in unstable output behavior, inaccurate voltage readings, or thermal shutdown under load-making it a critical layout requirement for every BQ294582DRVT implementation.

What is the maximum supply voltage the BQ294582DRVT can tolerate on VDD?

The BQ294582DRVT supports a VDD supply voltage range of 3 V to 25 V, with absolute maximum rating of 30 V. Recommended operating conditions specify 3 V to 25 V, making it compatible with both 2S (up to ~8.4 V) and 3S (up to ~12.6 V) Li-ion packs, as well as higher-voltage auxiliary supplies used in industrial battery systems. Exceeding 30 V on VDD risks permanent damage to the BQ294582DRVT.