My Inquiry
My Account
Texas Instruments BQ294700DSGR
- Part No.:
- BQ294700DSGR
- Manufacturer:
- Texas Instruments
- Category:
- Battery Management
- Package:
- 8-WFDFN Exposed Pad
- Datasheet:
-
BQ294700DSGR.pdf
- Description:
- IC BATT PROT LI-ION 2-4CEL 8WSON
- Quantity:
- Payment:
- Shipping:
Inventory:16,993
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BQ294700DSGR from Texas Instruments is a dedicated 2- to 4-series Li-ion battery overvoltage protection IC with factory-programmed 4.350 V OVP threshold, ±10 mV accuracy, external capacitor-programmed delay timer (1–2 s with 0.1 µF), and CMOS active-high output drive. It operates across –40°C to +110°C and supports notebook and UPS battery pack safety systems.
For engineers reviewing the BQ294700DSGR datasheet, BQ294700DSGR pinout, BQ294700DSGR application, or BQ294700DSGR equivalent, this page delivers verified specifications, validated pin functions, confirmed thermal and leakage performance, and real-world implementation guidance for second-level cell voltage monitoring and fuse-triggered shutdown.
Technical Context
The BQ294700DSGR independently monitors up to four series-connected Li-ion cells using analog sense inputs (V1–V4) referenced to VSS, comparing each against its fixed 4.350 V overvoltage threshold. Detection triggers an external RC-based delay timer on the CD pin, with timeout detection ensuring fault response even if the capacitor is open or shorted.
Its CMOS active-high output drives an NMOS FET to ground the fuse in overvoltage mode, enabling battery/charger current to blow the fuse. The device draws only 1 µA supply current when all cells are below threshold and maintains <100 nA per-cell input leakage-critical for long-term pack standby integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVP Threshold | 4.350 V ±10 mV at 25°C - enables precise cell voltage clamping without calibration overhead |
| OVP Hysteresis | 300 mV - prevents chatter during recovery near trip point |
| Delay Timer Range | 1–2 s with 0.1 µF CD capacitor - provides configurable fault response window for system-level safety timing |
| Supply Current | ≈1 µA when all cells < VPROTECT - minimizes parasitic drain on battery packs during storage |
| Input Leakage | <100 nA per cell input - preserves cell balancing integrity and extends shelf life |
| Operating Temp | –40°C to +110°C - supports industrial-grade UPS and high-ambient notebook applications |
| Output Drive | CMOS active-high, 4.5 mA source capability - directly interfaces with standard NMOS gate drivers |
Pinout & Package
Package: 8-pin WSON (DSG), 2.00 mm × 2.00 mm, exposed thermal pad connected to VSS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Power supply input | Unregulated 3–20 V supply; requires RC filter for noise immunity |
| V4 | Cell voltage sense input | Sense positive terminal of topmost (4th) cell in stack; must be filtered with 1 kΩ/0.1 µF |
| V3 | Cell voltage sense input | Sense positive terminal of 3rd cell; shares same filtering requirements as V4 |
| V2 | Cell voltage sense input | Sense positive terminal of 2nd cell; unused pins for 2S/3S configs must be shorted appropriately |
| V1 | Cell voltage sense input | Sense positive terminal of lowest cell; referenced to VSS |
| VSS | Ground reference | IC ground and negative terminal of lowest cell; thermal pad must connect to PCB VSS plane |
| CD | Delay timer capacitor node | Connects to external 0.1–1.0 µF capacitor; includes open/short fault detection logic |
| OUT | Fault signal output | CMOS active-high output; drives NMOS gate to ground fuse during overvoltage event |
Key Features
| Feature | Design Value |
|---|---|
| Factory-trimmed OVP threshold | 4.350 V with ±10 mV accuracy eliminates need for external calibration or trimming components |
| External delay capacitor interface | CD pin supports programmable 1–2 s delay with built-in open/short fault detection for robust production testability |
| Ultra-low quiescent current | 1 µA supply current ensures <1 µA total pack leakage-critical for multi-year battery shelf life |
| Independent per-cell monitoring | Four analog sense inputs (V1–V4) enable true cell-level overvoltage detection in 2S–4S configurations |
| High-temp operation support | Rated to +110°C ambient (BQ294700DSGRG4.A variant) - suitable for thermally constrained UPS enclosures |
Applications
| Notebook Battery Packs | UPS Battery Backup Systems |
|---|---|
Use Scenario: Protecting 3S or 4S Li-ion packs in thin-profile notebooks where thermal margin is limited and long shelf life is required. IC Role / Device Role / Timing Role: Second-level overvoltage monitor that triggers fuse blow via NMOS switch only after confirmed cell overvoltage persists for ≥1 s. Use Value: Prevents thermal runaway by enforcing strict 4.350 V/cell clamp with ±10 mV accuracy and eliminates false trips via 300 mV hysteresis. |
Use Scenario: Safeguarding 4S Li-ion backup banks in enterprise UPS units operating continuously at elevated ambient temperatures. IC Role / Device Role / Timing Role: Standby-mode protector that remains active at 1 µA while monitoring all cells, activating only upon sustained overvoltage. Use Value: Enables reliable +110°C operation (G4 variant) and maintains <100 nA/cell leakage to preserve charge retention over months of idle backup duty. |
| Portable Medical Devices | Industrial Handheld Test Equipment |
Use Scenario: Securing rechargeable 2S Li-ion power in Class II medical instruments requiring IEC 62368-1 compliance and fail-safe shutdown. IC Role / Device Role / Timing Role: Independent cell monitor interfacing with isolated fault signaling path to main controller. Use Value: Provides deterministic 1–2 s delay before fuse activation-aligning with safety-critical timing budgets and supporting customer test mode (≤170 ms). |
Use Scenario: Managing 4S battery packs in ruggedized handheld testers exposed to wide temperature swings and ESD-prone environments. IC Role / Device Role / Timing Role: Overvoltage guard with ±2000 V HBM ESD rating and integrated CD-pin fault detection for field reliability. Use Value: Guarantees fault response even if delay capacitor fails open/short-ensuring no single-point failure disables protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar overvoltage protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BQ294704DSGR | OVP threshold = 4.400 V (vs. 4.350 V); identical package, timing, and leakage specs | Used where higher cell voltage tolerance is needed for aged or high-voltage Li-ion chemistries | Select when system requires tighter margin above nominal 4.2 V/cell but below 4.45 V/cell max |
| BQ294708DSGR | OVP threshold = 4.500 V; same CMOS active-high output and 300 mV hysteresis | Targeted at high-capacity NMC or silicon-anode cells with extended upper voltage range | Choose for next-gen cells rated >4.35 V; verify thermal derating at 110°C still meets design margin |
Compared with BQ294700DSGR, BQ294704DSGR raises the trip point by 50 mV for relaxed aging headroom, while BQ294708DSGR adds 150 mV margin for emerging high-voltage chemistries-both retain identical delay, leakage, and thermal behavior, enabling drop-in layout reuse where OVP threshold is the sole variable.
Availability
BQ294700DSGR is available at Aetrix Electronics and suitable for notebook battery packs, UPS backup systems, and portable medical devices requiring stable component supply with guaranteed long-term manufacturability and full traceability.
Supply support for BQ294700DSGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with deep expertise in battery management and power safety ICs.
The BQ2947 family was designed specifically for second-level overvoltage protection in multi-cell Li-ion battery packs, emphasizing precision, ultra-low power, and fault-tolerant delay timing for safety-critical energy storage systems.
FAQ
What is the exact overvoltage protection threshold for BQ294700DSGR?
The BQ294700DSGR has a factory-programmed overvoltage protection threshold of 4.350 V with ±10 mV accuracy at 25°C. This value is fixed and not adjustable; it applies to each monitored cell independently and remains stable across the full –40°C to +110°C operating range with specified drift limits.
Does BQ294700DSGR support 2-cell or 3-cell battery configurations?
Yes, BQ294700DSGR supports 2-, 3-, and 4-series Li-ion configurations. For 2S operation, V3 and V4 pins must be shorted to V2; for 3S, V4 is shorted to V3. All unused sense inputs require proper termination per TI's recommended schematics to maintain measurement accuracy and stability.
How is the overvoltage delay time set on BQ294700DSGR?
The delay time on BQ294700DSGR is set by an external capacitor connected to the CD pin. With a 0.1 µF capacitor, the delay is 1–2 seconds. The relationship follows tCD = K × CCD, where K ranges from 10 to 20, allowing scalable timing from 100 ms to 20 s depending on capacitor value and tolerance.
What output type does BQ294700DSGR use, and how is it interfaced?
BQ294700DSGR uses a CMOS active-high output. When triggered, OUT drives high (up to VDD – 0.3 V) with 4.5 mA source capability, directly compatible with standard NMOS gate drivers used to short the fuse to ground. No external pull-up is required.
Is BQ294700DSGR qualified for high-temperature industrial use?
Yes-the BQ294700DSGRG4.A variant (identical to BQ294700DSGR per ordering row context) is rated for –40°C to +110°C operation and carries Level-1 MSL rating. Its thermal resistance (RθJA = 62°C/W) and low power dissipation (<20 µW typical) ensure reliable function in enclosed UPS or industrial handheld enclosures.
BQ294700DSGR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-WFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Function:
- Battery Protection
- Battery Chemistry:
- Lithium Ion
- Number of Cells:
- 2 ~ 4
- Fault Protection:
- Over Voltage
- Interface:
- -
- Operating Temperature:
- -40°C ~ 110°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WSON (2x2)
BQ294700DSGR FAQ
1.How can I place an order for BQ294700DSGR through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ294700DSGR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ294700DSGR reliable?
The price and inventory of BQ294700DSGR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ294700DSGR is usually 5 days.
3.What payment methods are accepted for BQ294700DSGR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ294700DSGR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ294700DSGR?
BQ294700DSGR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ294700DSGR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ294700DSGR?
For technical support, including BQ294700DSGR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ294700DSGR requirements.
6.How does Aetrix verify that BQ294700DSGR is sourced from the original manufacturer or authorized distributors?
All BQ294700DSGR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ294700DSGR meets industry standards.
7.What is the process for return or replacement of BQ294700DSGR?
All BQ294700DSGR units undergo pre-shipment inspection (PSI). If there is an issue with BQ294700DSGR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ294700DSGR part is unused and in its original packaging.
Return procedure for BQ294700DSGR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BQ294700DSGR Tags
-
BQ29700DSER
Texas Instruments
-
S-8241ABKMC-GBKT2G
ABLIC Inc.
-
S-8241ABPMC-GBPT2G
ABLIC Inc.
-
BQ27427YZFR
Texas Instruments
-
BQ27426YZFR
Texas Instruments
-
STC3117IJT
STMicroelectronics
-
STC3115IJT
STMicroelectronics
-
BQ76925RGER
Texas Instruments
-
NPM1100-QDAA-R
Nordic Semiconductor ASA
-
BQ27441DRZR-G1A
Texas Instruments
-
STC3115AIQT
STMicroelectronics
-
S-8252AAL-M6T1U
ABLIC Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
