Texas Instruments BQ298000RUGT

Overview

BQ298000RUGT from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±10mV overvoltage accuracy, ±20mV undervoltage accuracy, and ±1mV current-sense accuracy for OCC/OCD protection. It supports 1mΩ sense resistors and enables 0V charging in smartphones and power banks.

For engineers reviewing the BQ298000RUGT datasheet, BQ298000RUGT pinout, BQ298000RUGT application, or BQ298000RUGT equivalent, key selection factors include factory-configured 4.475V OVP/2.600V UVP thresholds, 1.25s OVP delay, 144ms UVP delay, CTR pin for host-controlled FET override or PTC-based OT extension, and X2QFN-8 (1.5×1.5×0.37mm) package compatibility with space-constrained portable designs.

Technical Context

The BQ298000RUGT implements high-side protection using an internal charge pump to drive NFET gates at VDD × (1 + AFETON), reducing Rdson across cell voltage range and improving thermal performance. Its ±1mV current-sense accuracy enables use of ultra-low-value (1mΩ) sense resistors without sacrificing precision.

It features dual-mode CTR functionality: active-high host control for system reset/shutdown (with 200µs detection and 4.5–5.4s timing window), or configurable internal pull-up (1.5/5/8MΩ) for external PTC thermistor integration to extend overtemperature protection beyond the internal 85°C die sensor.

Key Specifications

Pinout & Package

8-pin X2QFN package (1.50 × 1.50 × 0.37 mm) with wettable flanks, optimized for automated optical inspection and thermal dissipation in high-density battery packs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298000RUGT, BQ298006RUGT offers faster undervoltage response but lower UVP, while BQ298015RUGT provides tighter OVP tolerance and higher UVP-both retain identical 0V charging, CTR functionality, and X2QFN-8 packaging for seamless layout reuse.

Availability

BQ298000RUGT is available at Aetrix Electronics and suitable for smartphones, power banks, and tablets requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for consumer electronics production.

Supply support for BQ298000RUGT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on power efficiency and reliability.

The BQ298xx family is designed specifically for high-side primary protection of single-cell Li-ion/Li-polymer batteries in portable electronics, prioritizing thermal performance, ultra-low quiescent current, and factory-configured precision.

FAQ

What is the overvoltage protection threshold and accuracy of the BQ298000RUGT?

The BQ298000RUGT has a factory-configured overvoltage protection (OVP) threshold of 4.475V with ±10mV accuracy at 25°C. This specification ensures precise cell voltage monitoring to prevent overcharging while maintaining compatibility with standard 4.2V–4.45V Li-ion chemistries. The BQ298000RUGT achieves this accuracy across –40°C to +85°C with ±25mV total error, enabling robust operation in varying environmental conditions.

Does the BQ298000RUGT support 0V charging, and how does it work?

Yes, the BQ298000RUGT supports 0V charging (ZVCHG). When VBAT > 1V and VDD falls below the charge pump shutdown threshold (~1.95V), the CHG pin is driven to the PACK voltage instead of being disabled-allowing current to flow into a deeply depleted cell. This feature is exclusive to BQ2980xx variants; the BQ298000RUGT implements it fully, unlike BQ2982xx parts where ZVCHG is disabled.

How is the CTR pin used for overtemperature protection in the BQ298000RUGT?

In the BQ298000RUGT, the CTR pin can be configured with a factory-set internal pull-up resistor (1.5/5/8MΩ) to interface with an external PTC thermistor connected to VSS. As temperature rises, PTC resistance increases until the voltage divider at CTR exceeds VIH (1V), triggering CHG/DSG FET disable. This extends overtemperature protection beyond the internal 85°C die sensor, adding system-level thermal safety for battery packs.

What are the key timing parameters for undervoltage protection in the BQ298000RUGT?

The BQ298000RUGT applies a fixed 144ms delay before asserting undervoltage protection (UVP) and disabling the DSG FET. Its UVP threshold is factory-set to 2.600V with ±20mV accuracy at 25°C. Recovery occurs when VBAT rises above 2.800V (2.600V + 200mV hysteresis) or when a charger is detected (VPACK – VBAT > 700mV typical), ensuring stable re-engagement after fault clearance.

What package type and thermal characteristics does the BQ298000RUGT have?

The BQ298000RUGT uses an 8-pin X2QFN package measuring 1.50 × 1.50 × 0.37 mm with wettable flanks. Its junction-to-ambient thermal resistance (RθJA) is 171.8°C/W, and junction-to-board (RθJB) is 94.7°C/W-enabling effective heat transfer to the PCB in compact battery pack layouts. This package supports automated optical inspection and high-density placement in smartphones and wearables.