Texas Instruments BQ298006RUGT

Overview

BQ298006RUGT from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±12mV overcurrent in charge (OCC), ±14mV overcurrent in discharge (OCD), 2.500V undervoltage lockout (UVP), and 75°C internal overtemperature threshold - deployed in smartphones and power banks for fast-charge safety.

For engineers reviewing the BQ298006RUGT datasheet, BQ298006RUGT pinout, BQ298006RUGT application, or BQ298006RUGT equivalent, this device delivers precise 1mΩ sense resistor support, CTR-pin–controlled system reset/shutdown, and factory-configured 1.00s overvoltage delay with 20ms undervoltage delay - critical for compact, thermally constrained portable designs.

Technical Context

The BQ298006RUGT implements high-side protection using an internal charge pump to drive NFET gates at VDD × AFETON (1.45–1.81×), reducing Rdson across cell voltage range. It monitors BAT, PACK, CS, and CTR pins to execute independent OV, UV, OCC, OCD, SCD, and OT fault responses with fixed or factory-programmed delays.

Its CTR pin supports dual-mode operation: active-high override for system reset (≥200µs) or shutdown (>5.4s), or configurable PTC-based external overtemperature sensing via 1.5MΩ/5MΩ/8MΩ internal pull-up - all without requiring host MCU intervention during fault recovery.

Key Specifications

Pinout & Package

Package: 8-pin X2QFN (1.50 × 1.50 × 0.37 mm), wettable flank, RoHS-compliant, thermal pad exposed on bottom.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298006RUGT, BQ298000RUGT offers higher undervoltage release and elevated overtemperature cutoff - ideal for high-reliability medical wearables - while BQ298018RUGT trades tighter OVP for relaxed OCD sensitivity, reducing false triggers in noisy power-bank environments.

Availability

BQ298006RUGT is available at Aetrix Electronics and suitable for smartphones, power banks, and wearables requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for consumer electronics production.

Supply support for BQ298006RUGT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of battery management IP and automotive-grade reliability validation.

The BQ298xx product line is designed specifically for high-efficiency, high-accuracy single-cell Li-ion/Li-polymer battery protection in space-constrained portable electronics - emphasizing thermal performance, ultra-low quiescent current, and host-controllable safety functions.

FAQ

What is the overvoltage protection threshold and delay setting for BQ298006RUGT?

The BQ298006RUGT has a factory-configured overvoltage protection (OVP) threshold of 4.475V with a fixed 1.00-second detection delay. This setting triggers the CHG FET driver to turn off when battery voltage exceeds 4.475V for longer than 1.00 second during charging - preventing cell overcharge and ensuring compliance with JEITA guidelines. The BQ298006RUGT does not allow field adjustment of this parameter.

Does BQ298006RUGT support 0V charging, and under what conditions?

Yes, BQ298006RUGT supports 0V charging (ZVCHG) as part of the BQ2980xx family. It activates when VBAT > 1.0V, VDD < 1.95V (below charge pump enable threshold), and PACK+ voltage exceeds 2.0V. In this mode, the CHG driver outputs PACK voltage instead of VDD × AFETON, enabling safe trickle charging of deeply depleted cells. This function is disabled in BQ2982xx variants.

How does the CTR pin function in BQ298006RUGT for system reset versus shutdown?

In BQ298006RUGT, the CTR pin performs two distinct functions based on pulse width: a 200µs–3.6s high pulse forces immediate CHG/DSG FET turn-off for hardware reset, while a >5.4s sustained high pulse enters SHUTDOWN mode (0.1µA current). Both require absence of active OV or OT faults. The BQ298006RUGT's CTR pin cannot be used for PTC-based OT protection if configured for reset/shutdown - configuration is factory-set and immutable.

What is the minimum sense resistor value supported by BQ298006RUGT, and what accuracy is achieved?

The BQ298006RUGT supports sense resistors as low as 1mΩ with ±1mV overcurrent detection accuracy for both OCC and OCD events. This accuracy holds across –40°C to +85°C and enables precise current monitoring without significant I²R heating - critical for thermal management in slim smartphones and power banks. The device achieves this using matched internal comparator offsets and low-noise sensing architecture.

What package type and thermal characteristics does BQ298006RUGT use?

BQ298006RUGT uses an 8-pin X2QFN package measuring 1.50 × 1.50 × 0.37 mm with wettable flanks and an exposed thermal pad. Its junction-to-ambient thermal resistance (RθJA) is 171.8°C/W, junction-to-board (RθJB) is 94.7°C/W, and junction-to-case (top) is 75°C/W - enabling effective heat dissipation in compact layouts when soldered per TI's recommended footprint and thermal via pattern.