Texas Instruments BQ298009RUGT

Overview

BQ298009RUGT from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, providing overvoltage (4.500 V), undervoltage (2.900 V), overcurrent (–18 mV OCC / 30 mV OCD), short-circuit (40 mV), and overtemperature (disable OT shutdown) protection. It supports 1 mΩ sense resistors and enables system reset via CTR pin control in smartphones and power banks.

For engineers reviewing the BQ298009RUGT datasheet, BQ298009RUGT pinout, BQ298009RUGT application, or BQ298009RUGT equivalent, this page delivers verified functional specifications, validated pin functions, confirmed thermal and electrical behavior across –40°C to +85°C, and real-world implementation guidance for fast-charging battery safety systems.

Technical Context

The BQ298009RUGT implements high-side protection using an internal charge pump to drive NFET gates with Vgs ≈ VDD × AFETON (1.45–1.81 V/V), reducing Rdson and thermal dissipation. Its ±1 mV current-sense accuracy enables use of ultra-low-value (1 mΩ) sense resistors without sacrificing precision.

It features factory-configured protection thresholds: 4.500 V OVP with 1.00 s delay, 2.900 V UVP with 20 ms delay, –18 mV OCC, 30 mV OCD, 40 mV SCD, and internal OT threshold disabled per UV_Shut = Disable setting. The CTR pin supports host-controlled FET override but not PTC-based OT protection in this variant.

Key Specifications

Pinout & Package

8-pin X2QFN package (1.50 mm × 1.50 mm × 0.37 mm) with wettable flanks, optimized for automated optical inspection and thermal performance in handheld devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298009RUGT, BQ298010RUGT offers finer current-sense resolution for tighter protection margins, while BQ298012RUGT shifts voltage thresholds downward for compatibility with lower-voltage chemistries-neither is pin-compatible with automotive AEC-Q200 requirements.

Availability

BQ298009RUGT is available at Aetrix Electronics and suitable for smartphones, power banks, and tablets requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for consumer electronics production.

Supply support for BQ298009RUGT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in battery management solutions.

The BQ298xx product line is designed specifically for high-efficiency, high-accuracy single-cell Li-ion/Li-polymer battery protection in space- and thermally-constrained portable electronics.

FAQ

What is the overvoltage protection threshold and delay for BQ298009RUGT?

The BQ298009RUGT has a factory-configured overvoltage protection (OVP) threshold of 4.500 V with a 1.00-second detection delay. This means the CHG FET driver shuts off only after VBAT remains above 4.500 V for at least 1.00 second, preventing false trips from transient spikes. The OVP accuracy is ±10 mV at 25°C and ±25 mV across –40°C to +85°C, as specified in the official TI SLUSCS3L datasheet.

Does BQ298009RUGT support 0V charging, and how does it work?

Yes, BQ298009RUGT supports 0V charging because it belongs to the BQ2980xx family (not BQ2982xx). When VBAT > 1 V (V0INH) and VDD < 1.95 V (VDRIVER_SHUT), the CHG output is driven to the PACK voltage instead of relying on the charge pump-enabling charging of deeply depleted cells. This mode exits automatically once VBAT rises above VDRIVER_SHUT (~2.0 V), re-enabling normal charge-pump operation.

How is the CTR pin used for system reset versus shutdown in BQ298009RUGT?

In BQ298009RUGT, the CTR pin provides dual functionality: a pulse ≥200 µs but <3.6 s triggers momentary FET override (system reset), while a sustained HIGH signal >5.4 s initiates full device shutdown. The internal timer differentiates these modes-no external RC network is required. Shutdown is only entered if no OV or OT fault is active, ensuring safety-critical faults retain priority over host commands.

What is the current-sense accuracy and minimum usable sense resistor value for BQ298009RUGT?

The BQ298009RUGT achieves ±1 mV current-sense accuracy for both OCC and OCD detection across –40°C to +85°C, enabling reliable use of a 1 mΩ external sense resistor (RSNS). At 30 A discharge, this yields a 30 mV differential-well above the 30 mV OCD threshold-with margin for noise and drift. The CS input supports ±0.25 V common-mode range and rejects offset errors via matched internal amplifiers.

Is overtemperature protection enabled by default in BQ298009RUGT, and what is its behavior?

BQ298009RUGT includes an internal die temperature sensor with factory-configured overtemperature (OT) protection set to 85°C and 4.5 s delay. However, the UV_Shut parameter is set to "Disable", meaning OT faults trigger CHG/DSG FET shutdown but do not force the entire IC into low-power shutdown mode-power consumption drops to IFETOFF (2–4 µA) while retaining monitoring capability for faster recovery upon cooling.