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Texas Instruments BQ298010RUGR
- Part No.:
- BQ298010RUGR
- Manufacturer:
- Texas Instruments
- Category:
- Battery Management
- Package:
- 8-XFQFN
- Datasheet:
-
BQ298010RUGR.pdf
- Description:
- IC BATT MON LI-ION 1CELL 8X2QFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,624
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Product details
Overview
BQ298010RUGR from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±10mV overvoltage accuracy, ±20mV undervoltage accuracy, and ±1mV current-sense accuracy for OCC/OCD protection - enabling use of 1mΩ sense resistors in smartphones and power banks.
For engineers reviewing the BQ298010RUGR datasheet, BQ298010RUGR pinout, BQ298010RUGR application, or BQ298010RUGR equivalent, this device delivers fast-charge-ready high-side protection with CTR-controlled system reset/shutdown, 0V charging support, and dual OT protection (die + external PTC) - critical for compact, thermally constrained portable designs.
Technical Context
The BQ298010RUGR implements high-side protection using an internal charge pump to drive NFET gates with VGS ≈ VDD × AFETON (1.45–1.81 V/V), reducing FET RDS(on) across cell voltage range. It supports factory-configured protection thresholds including 4.500V OVP, 2.900V UVP, –10mV OCC, 20mV OCD, and 30mV SCD.
Its CTR pin enables host-triggered FET override (≥200µs HIGH) or system shutdown (≥5.4s HIGH), and can be factory-configured with 1.5MΩ internal pull-up for PTC-based external overtemperature detection - independent of the internal 85°C die OT threshold with 4.5s delay and 15°C hysteresis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVP Threshold | 4.500 V - factory-configured overvoltage trip point for safe Li-ion charging termination |
| UVP Threshold | 2.900 V - factory-configured undervoltage cutoff to prevent deep discharge damage |
| OCC Threshold | –10 mV - precise negative voltage drop detection across sense resistor during charge fault |
| OCD Threshold | 20 mV - accurate positive voltage drop detection for discharge overcurrent protection |
| SCD Threshold | 30 mV - fixed short-circuit detection level with 250 µs response for immediate load disconnect |
| Normal Mode Current | 4–6 µA at VDD < 3.9V - ultra-low quiescent power enabling multi-year battery shelf life |
| Shutdown Current | 0.1 µA maximum - minimal leakage during storage or system off-state |
| Package | X2QFN-8 (1.50 × 1.50 × 0.37 mm) - ultra-compact footprint for space-constrained mobile PCBs |
Pinout & Package
8-pin X2QFN package (1.50 mm × 1.50 mm × 0.37 mm) with wettable flanks, optimized for automated optical inspection and thermal performance in high-density layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| BAT | Battery voltage sensing input | Connects directly to battery anode; enables accurate OV/UV monitoring referenced to cell potential |
| VDD | Supply voltage input | Power source for internal circuitry; must be ≥1.5V to enable operation and ≥1.95V to activate charge pump |
| VSS | Device ground reference | Common return path for CS, PACK, and internal logic; requires low-impedance connection to system GND |
| CS | Current sense input | High-precision differential input referenced to VSS; measures voltage drop across external sense resistor (RSNS) |
| CTR | Active-high control input | Host-controlled override: ≥200µs HIGH resets FETs; ≥5.4s HIGH triggers shutdown; configurable for PTC OT sensing |
| PACK | Pack voltage sensing input | Connects to charger side (PACK+); used for charger presence detection and UV_SHUT logic |
| DSG | Discharge FET driver output | Drives gate of high-side DSG NFET; outputs VDD × (1 + AFETON) when active, ≤0.2V when off |
| CHG | Charge FET driver output | Drives gate of high-side CHG NFET; supports 0V charging mode in BQ298010RUGR when VDD < 1.95V |
Key Features
| Feature | Design Value |
|---|---|
| High-side NFET protection with charge pump | Enables consistent low RDS(on) across 2.5–4.5V cell range via boosted VGS, reducing thermal stress on FETs |
| 1mΩ sense resistor support | ±1mV OCC/OCD accuracy allows ultra-low-value RSNS, minimizing I²R loss and PCB heat generation |
| 0V charging capability | Activates CHG driver at PACK voltage (not VDD) when VBAT > 1V and VPACK > 2V - recovers deeply discharged cells |
| Dual overtemperature protection | Internal die sensor (85°C) + configurable CTR/PTC interface (1.5MΩ pull-up) - layered thermal safety for wearable/power bank use |
| Host-controllable FET override | CTR pin enables system-level reset/shutdown without hardware modification - simplifies firmware-driven power management |
| Ultra-low shutdown current | 0.1 µA max ensures negligible battery drain during long-term storage or transport mode |
Applications
| Smartphones | Power Banks |
|---|---|
|
Use Scenario: Primary cell protection in slim, thermally constrained smartphone battery packs with fast-charging requirements. IC Role / Device Role / Timing Role: High-side protector monitoring BAT, PACK, and CS to enforce OVP/UVP/OCD/SCD/OT limits and enable 0V recovery. Use Value: Enables use of 1mΩ sense resistor and high-VGS FET drive - reducing heat generation by >30% vs. legacy protectors in same form factor. |
Use Scenario: Single-cell Li-ion protection in portable power banks requiring reliable overcurrent and thermal shutdown during high-current discharge. IC Role / Device Role / Timing Role: Dual-path FET controller (CHG/DSG) with 250 µs SCD response and 4.5 s OT delay for robust fault handling. Use Value: Factory-configured 20mV OCD and 30mV SCD thresholds ensure precise current limiting without calibration - improving safety certification success rate. |
| Tablets | Wearables |
|
Use Scenario: Battery safety management in mid-size tablets where board space and thermal headroom are limited but peak discharge currents exceed 3A. IC Role / Device Role / Timing Role: Voltage/current/temperature monitor with CTR pin configured for host-initiated graceful shutdown before thermal throttling. Use Value: 4–6 µA normal-mode current extends standby time between charges; X2QFN-8 footprint saves >0.8 mm² vs. competing SOIC solutions. |
Use Scenario: Protection for small-form-factor wearable batteries (<500 mAh) subject to frequent temperature cycling and mechanical stress. IC Role / Device Role / Timing Role: Dual OT protection: internal die sensor (85°C) plus CTR-connected PTC for localized pack temperature monitoring. Use Value: 1.5MΩ factory-configured CTR pull-up enables direct PTC integration - eliminating external bias components and reducing BOM count by 2–3 parts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar battery protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BQ298009RUGR | OVP = 4.500 V, UVP = 2.900 V, OCC = –18 mV, OCD = 30 mV, SCD = 40 mV - tighter OCC/OCD thresholds than BQ298010RUGR | Higher sensitivity to charge/discharge faults; less tolerant of sense resistor tolerance and layout parasitics | Select when system requires stricter current fault detection - e.g., medical wearables with strict safety margins |
| BQ298012RUGR | OVP = 4.300 V, UVP = 2.750 V, OCC = –4 mV, OCD = 14 mV, SCD = 30 mV - lower voltage thresholds and reduced OCC sensitivity | Better suited for lower-voltage Li-ion chemistries or aging cells with reduced capacity and voltage sag | Select for cost-sensitive power banks using recycled or lower-grade cells where margin for voltage drift is required |
Compared with BQ298009RUGR and BQ298012RUGR, the BQ298010RUGR offers balanced protection thresholds (4.500V/2.900V) and moderate current sensitivity (–10mV/20mV), making it optimal for mainstream smartphones and tablets where reliability, manufacturability, and thermal performance must coexist.
Availability
BQ298010RUGR is available at Aetrix Electronics and suitable for smartphones, power banks, and tablets requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing for production ramp.
Supply support for BQ298010RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with decades of battery management IP.
The BQ298xx product line is designed specifically for high-reliability, high-density single-cell Li-ion protection in portable electronics - emphasizing thermal efficiency, ultra-low quiescent current, and host-controllable safety features.
FAQ
What is the factory-configured overvoltage and undervoltage threshold for BQ298010RUGR?
The BQ298010RUGR is factory-configured with an overvoltage (OVP) threshold of 4.500 V and an undervoltage (UVP) threshold of 2.900 V. These values are laser-trimmed during manufacturing and cannot be modified in the field. The OVP accuracy is ±10 mV at 25°C and ±25 mV across –40°C to +85°C, ensuring reliable cell voltage enforcement in smartphones and power banks.
Does BQ298010RUGR support 0V charging, and what conditions must be met?
Yes, BQ298010RUGR supports 0V charging (ZVCHG) as part of the BQ2980xx family. Activation requires VBAT > 1.0 V, VPACK > 2.0 V, and VDD < 1.95 V - at which point the CHG driver outputs PACK voltage instead of relying on the charge pump. This enables recovery of deeply depleted cells without external circuitry, a feature disabled in BQ2982xx variants.
How does the CTR pin function in BQ298010RUGR for system reset versus shutdown?
In BQ298010RUGR, the CTR pin performs dual functions based on pulse width: a HIGH signal ≥200 µs but <5.4 s triggers immediate FET override (CHG/DSG off) for system reset; a sustained HIGH ≥5.4 s initiates full shutdown mode (0.1 µA current). Both require absence of active OV or OT faults. The CTR pin is factory-configured for active-high logic with 1.0 V VIH and 0.4 V VIL thresholds.
What is the short-circuit discharge (SCD) response time and threshold for BQ298010RUGR?
The BQ298010RUGR has a fixed short-circuit discharge (SCD) threshold of 30 mV across the sense resistor and a fixed detection delay of 250 µs. This enables sub-millisecond disconnection of the discharge path during hard shorts, protecting both battery and load. The SCD recovery occurs automatically when (VBAT – VPACK) falls below 400 mV, indicating load removal.
Can BQ298010RUGR be used with an external PTC for overtemperature protection?
Yes, BQ298010RUGR supports external PTC-based overtemperature protection via the CTR pin. It is factory-configured with a 1.5 MΩ internal pull-up resistor, allowing direct connection of a PTC between CTR and VSS. When PTC resistance rises with temperature, CTR voltage crosses VIH (1.0 V), turning off CHG/DSG FETs - providing localized pack-level thermal protection complementary to the internal 85°C die sensor.
BQ298010RUGR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-XFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Function:
- Battery Monitor
- Battery Chemistry:
- Lithium Ion/Polymer
- Number of Cells:
- 1
- Fault Protection:
- Over Current, Over Temperature, Over/Under Voltage, Short Circuit
- Interface:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-X2QFN (1.5x1.5)
BQ298010RUGR FAQ
1.How can I place an order for BQ298010RUGR through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ298010RUGR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ298010RUGR reliable?
The price and inventory of BQ298010RUGR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ298010RUGR is usually 5 days.
3.What payment methods are accepted for BQ298010RUGR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ298010RUGR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ298010RUGR?
BQ298010RUGR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ298010RUGR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ298010RUGR?
For technical support, including BQ298010RUGR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ298010RUGR requirements.
6.How does Aetrix verify that BQ298010RUGR is sourced from the original manufacturer or authorized distributors?
All BQ298010RUGR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ298010RUGR meets industry standards.
7.What is the process for return or replacement of BQ298010RUGR?
All BQ298010RUGR units undergo pre-shipment inspection (PSI). If there is an issue with BQ298010RUGR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ298010RUGR part is unused and in its original packaging.
Return procedure for BQ298010RUGR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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