Texas Instruments BQ298010RUGT

Overview

BQ298010RUGT from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±10 mV overvoltage accuracy, ±20 mV undervoltage accuracy, and ±1 mV overcurrent detection accuracy. It supports 1 mΩ sense resistors and enables 0V charging for deeply depleted batteries in smartphones and power banks.

For engineers reviewing the BQ298010RUGT datasheet, BQ298010RUGT pinout, BQ298010RUGT application, or BQ298010RUGT equivalent, this device delivers precise voltage/current/temperature protection with configurable CTR-driven system reset, PTC-based secondary OT sensing, and ultra-low 4 µA normal-mode current consumption.

Technical Context

The BQ298010RUGT implements high-side protection using an internal charge pump to drive NFET gates with V_GS up to V_DD × 1.75, reducing FET R_DS(on) across cell voltage range. Its dual-path current sensing (OCC/OCD/SCD) uses the CS–VSS differential input with factory-configured thresholds and fixed 250 µs short-circuit delay.

It features dual overtemperature detection: internal die sensor (factory-set 75°C, 4.5 s delay, 15°C hysteresis) and optional external PTC on CTR pin (with 1.5 MΩ internal pull-up). The CTR pin provides host-controlled FET override (≥200 µs pulse) or timed shutdown (>5.4 s), but only when PTC pull-up is disabled - which matches BQ298010RUGT's "CTR Enabled" configuration per Device Comparison Table.

Key Specifications

Pinout & Package

Package: 8-pin X2QFN (1.50 mm × 1.50 mm × 0.37 mm), wettable flank, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298009RUGT and BQ298012RUGT, BQ298010RUGT offers balanced protection thresholds (4.500 V OVP / 2.900 V UVP) and moderate OCC sensitivity (–10 mV), making it optimal for mainstream 3.7 V Li-ion cells in consumer portable electronics without requiring design revision.

Availability

BQ298010RUGT is available at Aetrix Electronics and suitable for smartphones, power banks, and wearables requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for production ramp.

Supply support for BQ298010RUGT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of battery management system expertise.

The BQ298xx product line is designed specifically for high-side primary protection of single-cell Li-ion/Li-polymer batteries in space- and thermal-constrained portable electronics, emphasizing accuracy, ultra-low IQ, and host-controllable safety functions.

FAQ

What is the overvoltage protection threshold and accuracy of the BQ298010RUGT?

The BQ298010RUGT has a factory-configured overvoltage protection (OVP) threshold of 4.500 V with ±10 mV accuracy at 25°C. This tight tolerance ensures reliable cell voltage clamping without unnecessary charger disconnection during normal charge termination. The device also includes 200 mV hysteresis to prevent oscillation near the trip point, and the OVP delay is fixed at 1.0 second per the Device Comparison Table.

Does the BQ298010RUGT support 0V charging, and under what conditions?

Yes, the BQ298010RUGT supports 0V charging (ZVCHG) as it belongs to the BQ2980xx family. It activates when V_BAT > 1.0 V, V_DD < 1.95 V, and PACK+ voltage exceeds 2.0 V. In this mode, the CHG pin is driven to the PACK voltage instead of using the charge pump, enabling recovery of deeply depleted cells. The BQ298010RUGT exits ZVCHG when V_BAT rises above 1.95 V and the charge pump resumes normal operation.

How does the CTR pin function on the BQ298010RUGT, and is PTC-based overtemperature protection enabled?

The CTR pin on the BQ298010RUGT is configured for active-high FET override control (per Device Comparison Table: "CTR Enabled"), not PTC sensing. A >200 µs high pulse disables both CHG and DSG FETs for system reset; a >5.4 s pulse initiates full shutdown. PTC functionality requires internal pull-up resistor selection (1.5/5/8 MΩ), which is disabled in BQ298010RUGT - confirmed by its "CTR Enabled" and "UV_Shut Enabled" entries, distinguishing it from PTC-configured variants like BQ298218.

What are the key current protection specifications of the BQ298010RUGT?

The BQ298010RUGT provides ±1 mV accuracy for both overcurrent in charge (OCC = –10 mV) and overcurrent in discharge (OCD = 20 mV), with short-circuit in discharge (SCD) set to 30 mV. Detection delays are factory-configured: 8 ms for OCC/OCD and fixed 250 µs for SCD. These values allow precise, fast-acting current limiting using a 1 mΩ sense resistor while avoiding false trips during transient load surges.

What package type and thermal performance does the BQ298010RUGT use?

The BQ298010RUGT uses an 8-pin X2QFN package measuring 1.50 mm × 1.50 mm × 0.37 mm with wettable flanks. Its junction-to-ambient thermal resistance (R_θJA) is 171.8°C/W, and junction-to-board (R_θJB) is 94.7°C/W. This compact, thermally efficient package supports high-density layouts in smartphones and wearables while maintaining safe operating temperatures under continuous 4 µA quiescent load.