Texas Instruments BQ298012RUGR

Overview

BQ298012RUGR from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±4mV overcurrent in charge (OCC), ±14mV overcurrent in discharge (OCD), 4.300V overvoltage protection, and 2.750V undervoltage protection - designed for fast-charging smartphones and wearables requiring ultra-low sense-resistor heat dissipation.

For engineers reviewing the BQ298012RUGR datasheet, BQ298012RUGR pinout, BQ298012RUGR application, or BQ298012RUGR equivalent, this device delivers precise high-side protection with 1mΩ sense resistor support, CTR-controlled system reset/shutdown, and factory-configured 144ms UV delay and 8ms OCC/OCD delays - critical for compact, thermally constrained portable power systems.

Technical Context

The BQ298012RUGR implements a charge-pump-based high-side NFET driver architecture to maintain low Rdson across cell voltage range, enabling stable FET gate drive up to VDD × 1.81 without external bias. Its dual-path current sensing supports independent OCC and OCD detection using a single CS–VSS sense resistor.

Protection logic uses fixed 250µs short-circuit delay and 4.5s internal overtemperature response, while the CTR pin provides configurable host override: active-high >200µs triggers FET shutdown, and >5.4s initiates shutdown mode - with optional PTC-based external OT sensing via factory-configured 1.5MΩ internal pull-up.

Key Specifications

Pinout & Package

8-pin X2QFN package (1.50 × 1.50 × 0.37mm) with wettable flanks, optimized for automated optical inspection and thermal performance in high-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298012RUGR, BQ298010RUGR offers higher voltage headroom for next-gen cells, while BQ298015RUGR provides integrated 85°C OT shutdown - making BQ298012RUGR optimal for cost-sensitive, thermally stable smartphone platforms needing precise 4.300V/2.750V thresholds and minimal external components.

Availability

BQ298012RUGR is available at Aetrix Electronics and suitable for smartphones, wearables, and power banks requiring stable component supply, factory-programmed protection thresholds, and ultra-low quiescent current in space-constrained designs.

Supply support for BQ298012RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in battery management and power solutions.

The BQ298xx product line is designed specifically for high-side primary protection of single-cell Li-ion/Li-polymer batteries in portable electronics, emphasizing thermal efficiency, precision sensing, and host-controllable safety features.

FAQ

What is the overvoltage protection threshold of the BQ298012RUGR?

The BQ298012RUGR has a factory-configured overvoltage protection (OVP) threshold of 4.300V, with ±25mV accuracy across –40°C to +85°C. This value is laser-trimmed during manufacturing and cannot be adjusted externally. The OVP release hysteresis is fixed at 200mV, meaning the fault clears when battery voltage falls below 4.100V after charger removal or load detection. This threshold is optimized for standard 4.2V Li-ion cells with margin for voltage spikes during fast charging.

Does the BQ298012RUGR support 0V charging?

Yes, the BQ298012RUGR supports 0V charging as part of the BQ2980xx family. When VBAT > 1.0V (V0INH), VDD < 2.0V (VDRIVER_SHUT – VDRIVER_SHUT_HYS), and PACK+ voltage exceeds 2.0V (V0CHGR), the CHG driver outputs PACK+ voltage directly - bypassing the charge pump to enable charging of deeply depleted cells. This function is disabled in BQ2982xx variants but fully operational in BQ298012RUGR per TI's device comparison table.

How does the CTR pin function in the BQ298012RUGR?

The CTR pin in BQ298012RUGR operates in two modes: host-controlled FET override or external PTC-based overtemperature sensing. As an active-high input, holding CTR > 1.0V for >200µs shuts down CHG and DSG FETs for system reset; holding >5.4s enters shutdown mode. When factory-configured with internal pull-up (1.5MΩ), CTR connects to a PTC thermistor to trigger FET shutdown when external temperature exceeds the PTC's trip point - providing dual-layer OT protection beyond the internal 75°C or 85°C thresholds.

What is the minimum sense resistor value supported by the BQ298012RUGR?

The BQ298012RUGR supports a minimum sense resistor value of 1mΩ, enabled by its ±1mV current-sense accuracy for OCC and OCD detection. At 1mΩ, the device detects 4A charge current (–4mV) and 14A discharge current (+14mV) with full specification compliance. This reduces I²R power loss to 16mW at 4A - 75% lower than conventional 4mΩ designs - directly improving thermal performance in sealed consumer devices.

What package type and dimensions does the BQ298012RUGR use?

The BQ298012RUGR uses an 8-pin X2QFN package with nominal dimensions of 1.50mm × 1.50mm × 0.37mm and wettable flanks. This ultra-compact, leadless package is optimized for automated optical inspection and thermal conduction to the PCB. Pin pitch is 0.4mm, and the exposed thermal pad (EP) is electrically connected to VSS, requiring proper solder stencil design and thermal via placement per TI's SLUSCS3L layout guidelines.