Texas Instruments BQ298012RUGT

Overview

BQ298012RUGT from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±4mV overcurrent in charge (OCC), ±14mV overcurrent in discharge (OCD), 4.300V overvoltage protection, and 2.750V undervoltage protection - designed for fast-charging smartphones and power banks requiring ultra-low sense-resistor heat dissipation.

For engineers reviewing the BQ298012RUGT datasheet, BQ298012RUGT pinout, BQ298012RUGT application, or BQ298012RUGT equivalent, this device delivers precise 1mΩ-sense-capable current monitoring, CTR-pin-configurable system reset/shutdown, dual OT protection (die + external PTC), and 0V charging support - critical for robust battery safety in space-constrained portable electronics.

Technical Context

The BQ298012RUGT implements high-side protection using an internal charge pump to drive NFET gates at VDD × (1 + AFETON), enabling consistent low Rdson across battery voltage range. Its ±4mV OCC and ±14mV OCD thresholds are factory-configured with 8ms and 20ms delays respectively, and it supports dual overtemperature detection via internal die sensor (fixed 75°C threshold) and external PTC on CTR pin.

It features active-high CTR control with 200µs minimum assertion time for FET override and >5.4s hold for shutdown entry, while maintaining 0.1µA shutdown current and 4µA normal-mode supply current. The device enables 0V charging only when VBAT > 1V and PACK+ > 2V, with CHG output driven to PACK voltage during ZVCHG mode.

Key Specifications

Pinout & Package

Package: X2QFN-8, 1.50 mm × 1.50 mm × 0.37 mm, wettable flank, exposed thermal pad (RUG suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298012RUGT, BQ298015RUGT offers higher voltage thresholds and automatic UV shutdown for enhanced safety, while BQ298216RUGT removes ZVCHG and UV_SHUT to reduce cost - making BQ298012RUGT the optimal balance of precision, 0V recovery, and thermal flexibility for mainstream smartphones and power banks.

Availability

BQ298012RUGT is available at Aetrix Electronics and suitable for smartphones, power banks, and tablets requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for consumer electronics production.

Supply support for BQ298012RUGT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of leadership in battery management ICs.

The BQ298xx product line is engineered specifically for high-reliability, high-accuracy single-cell Li-ion/Li-polymer protection in portable electronics - emphasizing ultra-low quiescent current, 1mΩ sense compatibility, and flexible host-controlled safety functions.

FAQ

What is the overvoltage protection threshold and delay setting for BQ298012RUGT?

The BQ298012RUGT has a factory-configured overvoltage protection (OVP) threshold of 4.300V with a fixed 1.0-second detection delay. This setting triggers the CHG FET driver to turn off when battery voltage exceeds 4.300V for longer than 1.0 second during charging. The release hysteresis is 200mV, meaning the CHG FET re-enables only after battery voltage drops below 4.100V and charger removal is confirmed. This configuration is optimized for standard NMC Li-ion cells.

Does BQ298012RUGT support 0V charging, and what are the activation conditions?

Yes, BQ298012RUGT supports 0V charging (ZVCHG) as part of the BQ2980xx family. It activates when three conditions are simultaneously met: battery voltage (BAT) > 1.0V, PACK+ voltage > 2.0V, and VDD < 1.95V (charge pump shutdown voltage). Under these conditions, the CHG output is driven to the PACK voltage instead of the charge-pump-regulated level, enabling safe trickle charging of deeply depleted cells. This function is disabled in BQ2982xx variants.

How does the CTR pin function in BQ298012RUGT for system reset versus shutdown?

In BQ298012RUGT, the CTR pin performs dual functions based on assertion duration: a pulse >200µs but <3.6s causes immediate CHG/DSG FET turn-off for system reset, while sustained CTR HIGH >5.4s initiates full device shutdown (0.1µA current). Critically, CTR-driven shutdown is only allowed when no OV or OT fault is active. The pin also supports configuration with internal 1.5MΩ/5MΩ/8MΩ pull-ups to interface with external PTC thermistors for secondary overtemperature protection.

What is the current-sense accuracy and minimum sense resistor value supported by BQ298012RUGT?

BQ298012RUGT achieves ±1mV accuracy for overcurrent detection (OCC/OCD/SCD), enabling reliable operation with a minimum 1mΩ external sense resistor. At 1A load, this yields only 1mV drop across the resistor - minimizing I²R heating (<1mW) while preserving measurement fidelity. The ±1mV tolerance holds across –40°C to +85°C ambient, and the device supports factory-configured OCC = –4mV and OCD = +14mV thresholds with 8ms and 20ms delays respectively.

What package type and thermal characteristics does BQ298012RUGT use?

BQ298012RUGT uses the RUG package: an 8-pin X2QFN measuring 1.50 mm × 1.50 mm × 0.37 mm with wettable flanks and an exposed thermal pad. Its junction-to-ambient thermal resistance (RθJA) is 171.8°C/W, junction-to-board (RθJB) is 94.7°C/W, and junction-to-case (top) is 75°C/W. These values confirm suitability for compact layouts with limited copper area, especially when the thermal pad is soldered to a dedicated PCB ground plane for optimal heat dissipation.