Texas Instruments BQ298015RUGR

Overview

BQ298015RUGR from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, providing overvoltage (4.440 V), undervoltage (2.800 V), overcurrent (–8 mV OCC / 8 mV OCD), short-circuit (20 µs detection), and overtemperature (85 °C) protection for fast-charging smartphones and power banks. It supports 1 mΩ sense resistors and enables 0V charging via ZVCHG functionality.

For engineers reviewing the BQ298015RUGR datasheet, BQ298015RUGR pinout, BQ298015RUGR application, or BQ298015RUGR equivalent, key selection considerations include its factory-configured 4.440 V OVP threshold, 1.25 s OVP delay, CTR pin for host-controlled system reset/shutdown, ±1 mV current-sense accuracy, and X2QFN-8 (1.5 × 1.5 × 0.37 mm) package with high-side FET drive architecture.

Technical Context

The BQ298015RUGR implements a charge-pump-based high-side NFET driver architecture to maintain low Rdson across varying cell voltages, enabling thermal efficiency in compact portable devices. Its dual-path protection logic independently controls CHG and DSG FETs using voltage, current, and temperature inputs with fixed hysteresis (200 mV for OV/UV, 15–22 °C for OT).

It features a configurable CTR pin supporting two distinct modes: active-high host override (for system reset or shutdown with 200 µs–5.4 s timing window) or PTC-based external overtemperature sensing via factory-selected internal pull-up (1.5/5/8 MΩ). The device also integrates ZVCHG (0V charging) enabled only in BQ2980-series variants like BQ298015RUGR.

Key Specifications

Pinout & Package

Package: 8-pin X2QFN (1.50 mm × 1.50 mm × 0.37 mm), wettable flank, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298015RUGR, BQ298015RUGT offers identical performance in reel format for production lines, while BQ298215RUGR removes ZVCHG and UV_SHUT-making it unsuitable for applications requiring autonomous recovery from deep discharge or zero-volt battery states.

Availability

BQ298015RUGR is available at Aetrix Electronics and suitable for smartphones, power banks, and wearables requiring stable component supply, precise single-cell Li-ion protection, and factory-configured 0V charging capability.

Supply support for BQ298015RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of battery management system expertise.

The BQ298xx product line is designed specifically for high-efficiency, high-accuracy primary protection of single-cell Li-ion and Li-polymer batteries in space- and thermal-constrained portable electronics.

FAQ

What is the factory-configured overvoltage protection threshold for BQ298015RUGR?

The BQ298015RUGR has a factory-configured overvoltage protection (OVP) threshold of 4.440 V with ±10 mV accuracy at 25 °C. This value is laser-trimmed during manufacturing and cannot be adjusted by the user. The OVP delay is fixed at 1.25 seconds, and release hysteresis is 200 mV. This setting complies with standard Li-ion cell voltage limits for safe fast charging in consumer electronics.

Does BQ298015RUGR support 0V charging, and how does it work?

Yes, BQ298015RUGR supports 0V charging (ZVCHG) as part of the BQ2980xx family. When VBAT > 1 V and VDD < 2.0 V (below charge pump enable threshold), and PACK+ voltage exceeds 2 V, the CHG driver outputs PACK voltage instead of relying on the charge pump. This allows charging of severely depleted cells that would otherwise remain inaccessible. The BQ298015RUGR exits ZVCHG mode automatically once VBAT rises above ~2.0 V and the charge pump resumes normal operation.

How is the CTR pin used for system reset versus shutdown in BQ298015RUGR?

In BQ298015RUGR, the CTR pin performs dual functions based on pulse width: a HIGH pulse lasting 200 µs to 3.6 s triggers a momentary system reset (CHG/DSG off then auto-recovery), while a sustained HIGH signal >5.4 s initiates full shutdown mode (0.1 µA current, CHG/DSG latched off). This timing-based differentiation allows one GPIO to serve both functions without additional hardware. The CTR pin must be driven above 1 V (VIH) and exhibits 200 mV hysteresis for noise immunity.

What is the minimum sense resistor value supported by BQ298015RUGR, and what accuracy is achieved?

BQ298015RUGR supports sense resistors as low as 1 mΩ with ±1 mV typical current-sense accuracy at 25 °C. This accuracy holds across –40 °C to +85 °C for OCC/OCD/SCD thresholds within ±3 mV for signals ≥5 mV. The high-precision front-end enables low-heat dissipation design while maintaining reliable fault detection-critical for high-current fast-charging applications where even small voltage offsets impact safety margins.

Can BQ298015RUGR be used with an external PTC for overtemperature protection?

Yes, BQ298015RUGR supports external PTC-based overtemperature protection via the CTR pin when factory-configured with an internal pull-up resistor (1.5 MΩ, 5 MΩ, or 8 MΩ). The PTC is connected between CTR and VSS; rising temperature increases PTC resistance, raising CTR voltage until it exceeds VIH (1 V), which disables CHG and DSG FETs. Recovery occurs when temperature drops and CTR voltage falls below VIL (0.4 V). This provides board-level thermal protection complementary to the internal 85 °C die sensor.