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Texas Instruments BQ298018RUGR
- Part No.:
- BQ298018RUGR
- Manufacturer:
- Texas Instruments
- Category:
- Battery Management
- Package:
- 8-XFQFN
- Datasheet:
-
BQ298018RUGR.pdf
- Description:
- HIGH-SIDE PROTECTOR FOR SINGLE-C
- Quantity:
- Payment:
- Shipping:
Inventory:2,327
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Product details
Overview
BQ298018RUGR from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, providing overvoltage (4.400 V), undervoltage (2.700 V), overcurrent (–8 mV OCC / 20 mV OCD), short-circuit (60 mV), and overtemperature (85 °C) protection. It supports 1 mΩ sense resistors and enables system reset/shutdown via CTR pin control - deployed in fast-charging smartphones and power banks.
For engineers reviewing the BQ298018RUGR datasheet, BQ298018RUGR pinout, BQ298018RUGR application, or BQ298018RUGR equivalent, key selection considerations include its factory-configured 1.00 s OVP delay, 144 ms UVP delay, CTR-enabled dual-mode OT protection (internal die + optional PTC), and 0V charging capability unique to the BQ2980xx series.
Technical Context
The BQ298018RUGR implements high-side protection using an internal charge pump to drive NFET gates with VGS ≈ VDD × AFETON (1.45–1.81 V/V), reducing FET RDS(on) across cell voltage range. Its ±1 mV current-sense accuracy enables ultra-low-power dissipation with 1 mΩ RSNS.
It features dual-path OT detection: factory-set 85 °C internal die sensing with 4.5 s delay and fixed 15 °C hysteresis, plus configurable CTR pin interface for external PTC-based thermal monitoring using 1.5 MΩ, 5 MΩ, or 8 MΩ internal pull-up - all without requiring host MCU intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVP Threshold | 4.400 V - triggers CHG FET shutdown after 1.00 s delay if battery voltage exceeds this level during charging |
| UVP Threshold | 2.700 V - triggers DSG FET shutdown after 144 ms delay if battery voltage falls below this level under load |
| OCC Detection | –8 mV - detects excessive charge current with ±1 mV accuracy, enabling precise 1 mΩ sense resistor use |
| OCD Detection | 20 mV - detects excessive discharge current with ±1 mV accuracy and 48 ms delay before DSG FET turn-off |
| OT Threshold | 85 °C - internal die temperature threshold with fixed 4.5 s delay and 15 °C hysteresis for thermal fault recovery |
| CTR Function | Active-high pin supporting both system reset (<3.6 s pulse) and full shutdown (>5.4 s pulse), or PTC-based OT extension |
| Supply Current | 4 µA in NORMAL mode; 0.1 µA max in SHUTDOWN - enables long-term storage with minimal battery drain |
Pinout & Package
Package: 8-pin X2QFN (1.50 mm × 1.50 mm × 0.37 mm), thermally enhanced for compact portable designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| BAT | Battery voltage sensing input | Connects directly to battery anode; enables accurate OV/UV detection referenced to cell potential |
| VDD | Supply voltage input | Power source for internal circuitry; must be ≥1.5 V to enable charge pump and FET drivers |
| VSS | Device ground reference | Common return path for CS, PACK, and internal comparators; critical for sense-resistor accuracy |
| CS | Current sense input | Measures voltage drop across external sense resistor (RSNS) between PACK– and VSS for OCC/OCD/SCD detection |
| CTR | Control override input | Host-controlled active-high signal for system reset, shutdown, or external PTC-based OT protection |
| PACK | Pack voltage sensing input | Connects to charger side (PACK+); used for charger presence detection and UV_SHUT logic |
| DSG | Discharge FET driver output | Drives gate of high-side DSG NFET; outputs VDD × (1 + AFETON) when active, VFETOFF (~0.2 V) when off |
| CHG | Charge FET driver output | Drives gate of high-side CHG NFET; supports 0V charging mode in BQ298018RUGR when VDD < 2.0 V |
Key Features
| Feature | Design Value |
|---|---|
| High-side NFET protection architecture | Eliminates need for low-side sensing, preserving ground integrity and simplifying PCB layout in space-constrained devices |
| Integrated charge-pump FET driver | Delivers VGS up to ~1.8×VDD, ensuring low RDS(on) across full 2.7–4.4 V battery range for thermal efficiency |
| 0V charging support (BQ2980xx only) | Enables safe recharge of deeply depleted cells (<2.0 V) by driving CHG to PACK voltage instead of relying on charge pump |
| Configurable CTR pin functionality | Single pin serves as host-controlled reset/shutdown interface OR external PTC thermistor input for secondary OT protection |
| Ultra-low quiescent current | 4 µA normal operation and 0.1 µA shutdown minimize parasitic drain on single-cell Li-ion batteries during storage |
Applications
| Smartphones | Power Banks |
|---|---|
Use Scenario: Fast-charging smartphones with dual-path charging (USB-C PD + proprietary protocols) requiring robust overvoltage and short-circuit protection during high-current charge cycles. IC Role / Device Role / Timing Role: High-side protector monitoring BAT, PACK, and CS nodes; asserts CHG/DSG FET shutdown within 1.00 s (OVP) or 250 µs (SCD) to prevent thermal runaway. Use Value: Enables use of 1 mΩ sense resistor without sacrificing current accuracy, reducing board area and heat generation in thin form factors. |
Use Scenario: Multi-cell power banks with independent protection per cell, where low standby current extends shelf life and CTR pin enables MCU-initiated deep-sleep entry. IC Role / Device Role / Timing Role: Primary cell-level protector with factory-set 4.400 V OVP and 2.700 V UVP thresholds; CTR pin used for host-controlled shutdown during firmware updates. Use Value: 0.1 µA shutdown current prevents >1% annual self-discharge, critical for consumer power banks stored for months between uses. |
| Tablets | Wearables |
Use Scenario: Large-capacity tablets with high-power USB-C charging (≥30 W), demanding precise overcurrent detection to avoid false trips during burst-load conditions. IC Role / Device Role / Timing Role: Current-sense protector with ±1 mV OCC/OCD accuracy and 48 ms OCD delay; rejects transient spikes while responding to sustained faults. Use Value: Supports 20 mV OCD threshold with 48 ms delay - optimized for tablet peak discharge currents without compromising safety margin. |
Use Scenario: Compact wearables (smartwatches, earbuds) requiring minimal footprint and thermal management, where internal 85 °C OT protection complements external thermal sensors. IC Role / Device Role / Timing Role: Dual-mode thermal protector: internal die sensor (85 °C, 4.5 s delay) + CTR-configurable PTC interface for localized battery pack monitoring. Use Value: Eliminates need for separate thermal IC; CTR pin's 1.5 MΩ pull-up option matches common wearable PTC characteristics for seamless integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar battery protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BQ298015RUGR | OVP = 4.440 V, UVP = 2.800 V, same 85 °C OT and CTR configuration | Suitable for higher-voltage Li-ion cells (e.g., 4.45 V nominal) requiring tighter OV margin | Select when system requires 4.440 V OVP with identical timing and feature set |
| BQ298019RUGR | OVP = 4.425 V, UVP = 2.800 V, OCC = –30 mV (less sensitive), same CTR/OT capabilities | Better noise immunity in high-EMI environments due to higher OCC threshold | Choose for noisy industrial portable devices where false OCC trips must be minimized |
Compared with BQ298018RUGR, BQ298015RUGR offers higher OVP headroom for aging cells, while BQ298019RUGR trades OCC sensitivity for EMI robustness - both retain identical package, pinout, CTR functionality, and 0V charging support.
Availability
BQ298018RUGR is available at Aetrix Electronics and suitable for smartphones, power banks, and tablets requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for consumer electronics production.
Supply support for BQ298018RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in battery management systems.
The BQ298xx family is designed specifically for high-efficiency, high-reliability single-cell Li-ion protection in space-constrained portable electronics - emphasizing thermal performance, ultra-low quiescent current, and flexible host control via CTR.
FAQ
What is the overvoltage protection threshold and delay setting for BQ298018RUGR?
The BQ298018RUGR has a factory-configured overvoltage protection (OVP) threshold of 4.400 V with a fixed 1.00-second detection delay. This setting triggers CHG FET shutdown when battery voltage exceeds 4.400 V for longer than 1 second during charging, preventing cell overcharge and thermal stress. The BQ298018RUGR maintains ±10 mV accuracy at 25 °C and ±25 mV across –40 °C to +85 °C operating range.
Does BQ298018RUGR support 0V charging, and how does it work?
Yes, BQ298018RUGR supports 0V charging as part of the BQ2980xx series. When VBAT > 1.0 V (V0INH), VDD < 2.0 V (VDRIVER_SHUT – VDRIVER_SHUT_HYS), and PACK+ voltage > 2.0 V (V0CHGR), the CHG output is driven to the PACK voltage instead of relying on the internal charge pump - enabling safe recharge of deeply depleted cells. This function is disabled in BQ2982xx variants.
How is the CTR pin used for overtemperature protection in BQ298018RUGR?
In BQ298018RUGR, the CTR pin can be factory-configured with a 1.5 MΩ, 5 MΩ, or 8 MΩ internal pull-up resistor to interface with an external PTC thermistor connected to VSS. As temperature rises, PTC resistance increases, raising CTR voltage above VIH (1.0 V) and turning off both CHG and DSG FETs - adding a second, localized OT protection layer beyond the internal 85 °C die sensor.
What are the key differences between BQ298018RUGR and BQ298015RUGR?
BQ298018RUGR has OVP = 4.400 V and UVP = 2.700 V, while BQ298015RUGR has OVP = 4.440 V and UVP = 2.800 V - both share identical CTR configuration, 85 °C internal OT, 0V charging, and X2QFN-8 package. The higher thresholds in BQ298015RUGR accommodate higher-voltage Li-ion chemistries or aging cells with increased OVP margin requirements.
What is the current consumption of BQ298018RUGR in normal and shutdown modes?
BQ298018RUGR draws 4 µA typical supply current in NORMAL mode (VDD > 4.0 V) and ≤0.1 µA in SHUTDOWN mode (VPACK < VBAT, VDD = 1.5 V). This ultra-low quiescent current minimizes battery self-discharge during storage, supporting >10-year shelf life in low-power portable applications - a critical requirement for consumer power banks and wearables.
BQ298018RUGR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-XFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Function:
- Battery Protection
- Battery Chemistry:
- Lithium Ion/Polymer
- Number of Cells:
- 1
- Fault Protection:
- Over Current, Over Temperature, Over/Under Voltage, Short Circuit
- Interface:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-X2QFN (1.5x1.5)
BQ298018RUGR FAQ
1.How can I place an order for BQ298018RUGR through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ298018RUGR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ298018RUGR reliable?
The price and inventory of BQ298018RUGR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ298018RUGR is usually 5 days.
3.What payment methods are accepted for BQ298018RUGR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ298018RUGR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ298018RUGR?
BQ298018RUGR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ298018RUGR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ298018RUGR?
For technical support, including BQ298018RUGR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ298018RUGR requirements.
6.How does Aetrix verify that BQ298018RUGR is sourced from the original manufacturer or authorized distributors?
All BQ298018RUGR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ298018RUGR meets industry standards.
7.What is the process for return or replacement of BQ298018RUGR?
All BQ298018RUGR units undergo pre-shipment inspection (PSI). If there is an issue with BQ298018RUGR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ298018RUGR part is unused and in its original packaging.
Return procedure for BQ298018RUGR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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