Texas Instruments BQ298019RUGR

Overview

BQ298019RUGR from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, ±30mV overcurrent-in-charge (OCC), ±8mV overcurrent-in-discharge (OCD), 4.425V overvoltage protection, 2.800V undervoltage protection, and 85°C internal overtemperature threshold - enabling fast/flash charging in space-constrained smartphones and wearables.

For engineers reviewing the BQ298019RUGR datasheet, BQ298019RUGR pinout, BQ298019RUGR application, or BQ298019RUGR equivalent, this page delivers verified functional specifications, validated 8-pin X2QFN package mapping, confirmed CTR-controlled FET override and PTC-configurable OT protection, and real-world thermal/power trade-offs for high-side protection design.

Technical Context

The BQ298019RUGR implements high-side protection using an internal charge pump to drive NFET gates at VDD × AFETON (1.45–1.81×), reducing Rdson across cell voltage range. Its ±1mV current-sense accuracy supports 1mΩ sense resistors, minimizing I²R heating during high-current flash charging.

It features dual-mode CTR pin operation: active-high host control for system reset/shutdown (with 200µs detection and 5.4s shutdown timeout), or factory-configured 1.5MΩ/5MΩ/8MΩ internal pull-up for external PTC-based overtemperature sensing - both disabling ZVCHG recovery during fault conditions.

Key Specifications

Pinout & Package

Package: 8-pin X2QFN (RUG), 1.50 mm × 1.50 mm × 0.37 mm body, wettable flank terminations, exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298019RUGR, BQ298015RUGR offers a +15mV OVP offset for enhanced safety margin on high-energy-density cells, while BQ298018RUGR provides a –25mV OVP shift for conservative charge termination on aging or high-impedance cells - all retain identical thermal, current-sense, and CTR-control performance.

Availability

BQ298019RUGR is available at Aetrix Electronics and suitable for smartphones, power banks, and wearables requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for consumer electronics production.

Supply support for BQ298019RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in battery management systems.

The BQ298xx product line is designed specifically for high-efficiency, high-reliability primary protection of single-cell Li-ion and Li-polymer batteries in portable electronics - emphasizing thermal optimization, ultra-low power, and host-controllable safety functions.

FAQ

What is the overvoltage protection threshold of the BQ298019RUGR?

The BQ298019RUGR has a factory-configured overvoltage protection (OVP) threshold of 4.425V, with ±25mV accuracy across –40°C to +85°C. This value is fixed and not user-adjustable. The device asserts OVP fault after a 1.25-second delay when BAT exceeds this threshold during charging, and releases the fault when BAT falls below 4.225V (200mV hysteresis) and charger removal is detected. This specification ensures safe termination of charge for standard Li-ion cells without risking electrolyte decomposition.

Does the BQ298019RUGR support 0V charging, and how does it work?

Yes, the BQ298019RUGR supports 0V charging (ZVCHG) as part of the BQ2980xx family. When VBAT > 1.0V (V0INH), VDD < 1.95V (VDRIVER_SHUT), and PACK+ voltage > 2.0V (V0CHGR), the CHG driver outputs PACK voltage instead of relying on the charge pump - enabling charging of severely depleted cells. Once VBAT rises above ~2.0V, the charge pump re-enables and CHG transitions to normal VDD × AFETON drive. This function is disabled in BQ2982xx variants but fully operational in BQ298019RUGR.

How is the CTR pin configured on the BQ298019RUGR, and what functions does it enable?

The CTR pin on the BQ298019RUGR is factory-configured for active-high control with internal pull-up disabled, enabling two modes: (1) host GPIO-driven system reset (CHG/DSG off for >200µs, auto-recovery if <3.6s), or (2) full shutdown (CHG/DSG off + 0.1µA mode) if held high >5.4s. It does not support PTC-based OT sensing in this variant, as that requires factory-set internal pull-up (1.5/5/8MΩ), which is absent in BQ298019RUGR per Device Comparison Table. CTR VIH is 1.0V with 200mV hysteresis.

What is the current-sense accuracy and supported sense resistor range for the BQ298019RUGR?

The BQ298019RUGR achieves ±1mV current-sense accuracy for both OCC and OCD events at TA = 25°C, degrading to ±3mV across –40°C to +85°C. It supports sense resistors as low as 1mΩ, enabling high-current flash charging (e.g., 5A → 5mV drop) with minimal self-heating. The CS pin is a high-impedance differential input referenced to VSS, requiring Kelvin connection to RSNS. Accuracy is maintained regardless of VDD (3–5V) or load capacitance (<1µA on CHG/DSG), making it suitable for precision protection in thermally sensitive wearables.

What thermal performance metrics apply to the BQ298019RUGR in its X2QFN package?

The BQ298019RUGR in the RUG (X2QFN-8) package has a junction-to-ambient thermal resistance (RθJA) of 171.8°C/W, junction-to-board (RθJB) of 94.7°C/W, and junction-to-case (top) (RθJC(top)) of 75°C/W. These values assume standard JEDEC 2-layer board layout with 1-in² copper pour under the exposed thermal pad. At 85°C ambient and 8µA supply current, self-heating remains <1.4°C - confirming suitability for sealed wearable enclosures. The 0.37mm profile also minimizes thermal mass, enabling rapid response to transient overtemperature events.