Texas Instruments BQ298216RUGR

Overview

BQ298216RUGR from Texas Instruments is a high-side battery protection IC for single-cell Li-ion/Li-polymer batteries, featuring integrated NFET drivers, ±4mV overvoltage detection at 4.300V, ±20mV undervoltage detection at 2.500V, and ±1mV current-sense accuracy supporting 1mΩ sense resistors. It delivers fast flash-charge protection in smartphones and power banks with 4µA normal-mode current consumption.

For engineers reviewing the BQ298216RUGR datasheet, BQ298216RUGR pinout, BQ298216RUGR application, or BQ298216RUGR equivalent, key selection criteria include its factory-configured 4.300V OVP/2.500V UVP thresholds, 144ms UV delay, 30mV SCD threshold, CTR pin for host-controlled FET override or PTC-based OT extension, and disabled 0V charging-distinguishing it from BQ2980xx variants.

Technical Context

The BQ298216RUGR implements high-side protection using an internal charge pump to drive NFET gates, enabling consistent R_DS(on) across cell voltage range. Its dual FET drivers (CHG/DSG) deliver V_GS ≈ V_DD × A_FETON (1.45–1.81 V/V), with rise/fall times of 400–800µs/50–200µs under 8nF load.

Protection logic uses factory-programmed thresholds and fixed delays: 1.00s OVP delay, 144ms UVP delay, 8ms OCC/OCD delay, 250µs SCD delay, and 4.5s OT delay. The CTR pin supports either host-triggered system reset (pulse <3.6s) or shutdown (>5.4s), or-when internally pulled up-PTC-based external overtemperature sensing.

Key Specifications

Pinout & Package

X2QFN-8 package (1.50 mm × 1.50 mm × 0.37 mm) with wettable flanks, optimized for thermal performance and automated optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298216RUGR, BQ298215RUGR offers higher OVP/UVP thresholds and enabled UV shutdown-making it suitable for higher-voltage cells-but shares identical package, pinout, and CTR flexibility. MP2651DJ-LF-Z integrates charging but sacrifices CTR control and has no 0V-charge disable distinction.

Availability

BQ298216RUGR is available at Aetrix Electronics and suitable for smartphones, power banks, and wearables requiring stable component supply, precise 4.300V overvoltage cutoff, and factory-configured 144ms undervoltage delay with UV shutdown disabled.

Supply support for BQ298216RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with decades of battery management expertise.

The BQ298xx product line delivers high-side Li-ion protection with integrated charge-pump FET drivers, targeting space-constrained, thermally sensitive portable electronics needing ultra-low quiescent current and configurable fault responses.

FAQ

What is the overvoltage protection threshold and accuracy of the BQ298216RUGR?

The BQ298216RUGR has a factory-configured overvoltage protection (OVP) threshold of 4.300 V with ±25 mV accuracy across –40°C to +85°C. This specification ensures reliable cell voltage monitoring without user calibration, and the fixed 200 mV hysteresis prevents oscillation during recovery. The BQ298216RUGR maintains this accuracy independent of supply voltage within its 1.5–5.5 V operating range.

Does the BQ298216RUGR support 0V charging, and how does it differ from BQ2980xx variants?

No, the BQ298216RUGR explicitly disables 0V charging (ZVCHG). Unlike BQ2980xx devices-which activate CHG output at PACK voltage when VDD falls below the charge pump enable threshold-the BQ298216RUGR halts all charging activity whenever VDD < V_{DRIVER_SHUT} – V_{DRIVER_SHUT_HYS} (≈1.95 V). This design choice prioritizes robustness in systems where zero-volt recovery is not required.

How is the CTR pin configured on the BQ298216RUGR, and what functions does it support?

The CTR pin on the BQ298216RUGR is factory-configured for active-high FET override control. It supports host-initiated system reset (pulse <3.6 s) or shutdown (>5.4 s), and-when internally pulled up-can interface with an external PTC for additional overtemperature protection. The BQ298216RUGR uses a 1.5 MΩ internal pull-up resistor, and CTR VIH/VIL levels are 1.0 V/0.4 V with 200 mV hysteresis.

What are the key timing parameters for undervoltage protection on the BQ298216RUGR?

The BQ298216RUGR features a factory-set undervoltage protection (UVP) threshold of 2.500 V with a 144 ms detection delay and fixed 200 mV hysteresis. UV shutdown is disabled-meaning the DSG FET turns off but the device remains powered in IFETOFF mode (2–4 µA). Recovery occurs when VBAT exceeds 2.700 V (2.500 V + hysteresis) or when a charger is detected (VPACK – VBAT > 700 mV typical).

What package type and thermal characteristics does the BQ298216RUGR have?

The BQ298216RUGR uses an 8-pin X2QFN package (1.50 mm × 1.50 mm × 0.37 mm) with wettable flanks. Its thermal resistance is R_θJA = 171.8°C/W (junction-to-ambient) and R_θJB = 94.7°C/W (junction-to-board), enabling effective heat dissipation in thin portable PCBs. The ψ_JB value of 94.9°C/W confirms strong thermal coupling to the PCB copper plane.