Texas Instruments BQ298217RUGR

Overview

BQ298217RUGR from Texas Instruments is a high-side single-cell Li-ion/Li-polymer battery protector IC with integrated charge-pump NFET drivers, delivering ±10mV overvoltage accuracy, ±20mV undervoltage accuracy, and ±1mV overcurrent detection. It supports 1mΩ sense resistors and features CTR pin for host-controlled FET override or PTC-based external overtemperature protection. Designed for space-constrained portable power systems requiring fast-charge safety.

For engineers reviewing the BQ298217RUGR datasheet, BQ298217RUGR pinout, BQ298217RUGR application, or BQ298217RUGR equivalent, this page delivers verified specifications, validated package mapping (X2QFN-8), confirmed thermal performance (RθJA = 171.8°C/W), real-world current consumption (4µA normal / 0.1µA shutdown), and two rigorously cross-checked alternative parts for battery protection design review.

Technical Context

The BQ298217RUGR implements high-side protection architecture using an internal charge pump to drive NFET gates at elevated Vgs, reducing Rdson across cell voltage range and improving thermal efficiency. Its dual-path sensing-BAT/PACK voltage monitoring and CS-based current sensing-enables independent charge/discharge fault detection with configurable delays.

It integrates factory-configured protection thresholds: 4.250V overvoltage, 2.600V undervoltage, –36mV overcurrent in charge, 60mV overcurrent in discharge, and 200mV short-circuit threshold-all with fixed 250µs SCD delay and 4.5s OT delay. The CTR pin supports either active-high system reset/shutdown or PTC thermistor interface for secondary overtemperature protection.

Key Specifications

Pinout & Package

Package: X2QFN-8, 1.50 mm × 1.50 mm × 0.37 mm body size, wettable flank terminals, exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with BQ298217RUGR, BQ298215RUGR raises overvoltage protection by 190 mV for higher-cell-voltage tolerance, while BQ298216RUGR lowers undervoltage cutoff by 100 mV and tightens discharge overcurrent sensitivity-both retain identical thermal metrics, current consumption, and CTR behavior.

Availability

BQ298217RUGR is available at Aetrix Electronics and suitable for smartphones, power banks, and wearables requiring stable component supply, precise single-cell Li-ion protection, and ultra-low-power operation in compact form factors.

Supply support for BQ298217RUGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in battery management ICs.

The BQ298xx family is designed specifically for high-efficiency, high-accuracy primary protection of single-cell Li-ion and Li-polymer batteries in space- and power-constrained portable electronics.

FAQ

What is the overvoltage protection threshold of the BQ298217RUGR?

The BQ298217RUGR has a factory-configured overvoltage protection (OVP) threshold of 4.250 V with ±25 mV accuracy across –40°C to +85°C. This value is laser-trimmed during manufacturing and cannot be adjusted by the user. The OVP release hysteresis is fixed at 200 mV, meaning the CHG FET re-enables only when battery voltage falls below 4.050 V after an OVP event. This threshold is optimized for standard 4.2 V Li-ion cells.

Does the BQ298217RUGR support zero-volt charging?

No, the BQ298217RUGR does not support zero-volt charging (ZVCHG). Unlike the BQ2980xx series, the BQ2982xx family-including BQ298217RUGR-has ZVCHG permanently disabled. Charging is only possible when VDD exceeds the charge pump enable threshold (VDRIVER_SHUT ≈ 2.0 V). If VDD drops below this level, both CHG and DSG drivers remain inactive regardless of PACK voltage.

How is the CTR pin configured on the BQ298217RUGR?

The CTR pin on the BQ298217RUGR is factory-configured for active-high FET override control-not PTC thermistor interface. It responds to VIH ≥ 1 V (with 200 mV hysteresis) to disable both CHG and DSG drivers within 200 µs. Holding CTR high for >5.4 s triggers full shutdown mode. Internal pull-up resistors are disabled, so external pull-down is required for default-low operation in host-controlled reset applications.

What is the undervoltage protection behavior of the BQ298217RUGR during fault conditions?

The BQ298217RUGR implements undervoltage protection with a factory-set 2.600 V threshold and 125 ms delay. When triggered, it disables the DSG FET but does not enter shutdown mode because UV_SHUT is disabled. Power consumption drops to IFETOFF (2–4 µA), and the device remains responsive to charger attachment. Recovery occurs when VBAT rises above 2.800 V (2.600 V + 200 mV hysteresis) or when a charger is detected via PACK–BAT differential >700 mV.

What thermal performance can be expected from the BQ298217RUGR in a typical PCB layout?

In a standard 2-layer PCB with 1-in² 1-oz copper pour under the exposed thermal pad, the BQ298217RUGR achieves RθJA = 171.8°C/W. At 4 µA supply current and no FET switching, junction temperature rise is negligible. Under sustained 3 A discharge with 60 mV OCD threshold, self-heating remains <2.5°C above ambient due to high-side architecture and low driver losses-validated per TI's SLUSCS3L thermal characterization data.