Texas Instruments BQ4010MA-150

Overview

BQ4010MA-150 from Texas Instruments is a nonvolatile 8 k × 8 (65,536-bit) SRAM with integrated lithium backup, 150 ns access time, 5 V operation, and 0°C to 70°C temperature range. It functions as a standard CMOS SRAM during normal operation and automatically preserves data during power loss using internal battery switchover - used in industrial control memory retention and embedded instrumentation data logging.

For engineers reviewing the BQ4010MA-150 datasheet, BQ4010MA-150 pinout, BQ4010MA-150 application, or BQ4010MA-150 equivalent, key selection considerations include power-fail detect threshold (VPFD = 4.62 V), write-protection timing (tWPT ≤ 150 µs), data retention duration (>10 years), and compatibility with industry-standard 28-pin DIP 64-Kb SRAM layouts.

Technical Context

The BQ4010MA-150 integrates a CMOS SRAM core, power-fail detection circuitry monitoring VCC against VPFD = 4.62 V (typ), and automatic lithium cell activation when VCC drops below VSO ≈ 3 V. Its control logic enforces unconditional write-protection within tWPT ≤ 150 µs of power failure detection and maintains high-impedance I/O states during backup mode.

During power-up, the device holds write-protection for tCER ≤ 120 ms after VCC exceeds VPFD to ensure processor stabilization. The internal lithium coin cell remains electrically isolated until first VCC application, limiting self-discharge to ~0.5% per year prior to activation.

Key Specifications

Pinout & Package

28-pin plastic dual-in-line package (PDIP), MA package type, 0.6-inch width, through-hole mounting. Pin 1 index located at bottom-left corner (viewed top-down with notch left).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK15C88-150 and DS1248-150+, the BQ4010MA-150 offers tighter VPFD tolerance (4.62 V) for robust 5 V system brownout detection, faster write-protection initiation (≤150 µs), and lowest standby current among equivalents - making it optimal for power-constrained, high-integrity data buffering.

Availability

BQ4010MA-150 is available at Aetrix Electronics and suitable for industrial control, metering infrastructure, and medical diagnostics requiring stable component supply despite its obsolete status - supported via verified legacy inventory and traceable second-source channels.

Supply support for BQ4010MA-150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of experience in reliable memory solutions.

The BQ4010MA-150 belongs to TI's bq40xx nonvolatile SRAM family, designed specifically for applications demanding seamless data retention across uncontrolled power interruptions - targeting industrial, instrumentation, and infrastructure equipment.

FAQ

What is the power-fail detect threshold voltage for BQ4010MA-150?

The BQ4010MA-150 uses a fixed power-fail detect threshold VPFD = 4.62 V (typical), calibrated for 5 V systems with ±5% supply tolerance. This value is factory-trimmed and not user-adjustable. When VCC falls below this threshold, the device immediately initiates write-protection and switches to internal lithium backup. The BQ4010MA-150 does not support alternative VPFD settings or external adjustment.

Does BQ4010MA-150 require external components for battery backup operation?

No, the BQ4010MA-150 requires zero external components for nonvolatile operation. Its internal lithium coin cell is pre-installed and electrically isolated until first application of VCC; thereafter, the integrated control circuitry autonomously manages switchover, write-protection, and retention. No external capacitors, regulators, or battery chargers are needed - simplifying design and reducing bill-of-materials cost.

Is BQ4010MA-150 pin-compatible with standard 64-Kb SRAMs?

Yes, the BQ4010MA-150 uses an industry-standard 28-pin DIP (MA package) footprint identical to JEDEC 64-Kb SRAMs such as the HM628128 or IS61LV25616. All address, data, and control signals (A0–A12, DQ0–DQ7, CE, WE, OE, VCC, VSS) map directly - enabling drop-in replacement without PCB redesign. Pins 1 and 26 are NC and must remain unconnected.

How long does BQ4010MA-150 retain data without external power?

The BQ4010MA-150 retains data for more than 10 years without external power, based on TI's characterization at TA = 25°C. This assumes the internal lithium cell has been activated by at least one prior VCC application; prior to activation, self-discharge is ~0.5% per year. Retention time decreases at elevated temperatures but remains validated across the 0°C to 70°C operating range.

What happens to BQ4010MA-150 outputs during power-down?

When VCC falls below VPFD = 4.62 V, the BQ4010MA-150 places all DQ0–DQ7 pins into high-impedance state within ≤150 µs, regardless of ongoing bus activity. CE, WE, and OE inputs are treated as "don't care," and no further read or write operations are acknowledged. This prevents bus contention and ensures system-level signal integrity during backup mode - a hardware-enforced behavior independent of software control.