Texas Instruments BQ4011MA-100

Overview

BQ4011MA-100 from Texas Instruments is a 32 k × 8 nonvolatile SRAM with integrated lithium backup, 5-V operation, 100 ns access time, and 28-pin DIP package. It functions as a standard SRAM during normal operation and automatically preserves data during power loss in industrial control and metering systems requiring long-term memory retention without external circuitry.

For engineers reviewing the BQ4011MA-100 datasheet, BQ4011MA-100 pinout, BQ4011MA-100 application, or BQ4011MA-100 equivalent, key selection criteria include VPFD threshold (4.62 V), tCER recovery time (120 ms max), data retention duration (≥10 years), and compatibility with industry-standard 256-kb SRAM layouts.

Technical Context

The BQ4011MA-100 integrates a CMOS SRAM core, power-fail detection circuitry, and a lithium coin cell within a single 28-pin DIP module. Its VPFD threshold is fixed at 4.62 V (typical) for 5-V systems with ±5% tolerance, triggering automatic write-protection and battery switchover when VCC falls below this level.

During power-up, the device enforces a 120 ms chip-enable recovery window (tCER) before allowing writes, ensuring processor stabilization. The internal lithium cell remains electrically isolated until first VCC application, limiting self-discharge to ~0.5% per year prior to activation.

Key Specifications

Pinout & Package

28-pin plastic dual-in-line package (MA), 0.600-inch width, through-hole mounting. Pin 14 is VSS (ground), Pin 28 is VCC (5-V supply), and all address/data/control signals conform to JEDEC-standard 256-kb SRAM layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with BQ4011YMA-100 and BQ4011LYMA-70N, the BQ4011MA-100 delivers optimal brownout resilience for tightly regulated 5-V systems, while its commercial temperature grade (0°C to 70°C) simplifies thermal design in controlled environments-making it ideal for metering and medical applications where precision VPFD timing and long-term data retention are prioritized over wide-temp operation or low-voltage support.

Availability

BQ4011MA-100 is available at Aetrix Electronics and suitable for smart metering, industrial data logging, medical diagnostics, and avionics black box recorders requiring stable component supply and guaranteed 10-year data retention.

Supply support for BQ4011MA-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of expertise in memory and power management solutions.

The BQ4011MA-100 belongs to TI's nonvolatile SRAM product line, engineered to replace external battery + SRAM + supervisor combinations in mission-critical data retention applications where reliability and long-term stability are paramount.

FAQ

What is the power-fail detect voltage (VPFD) for BQ4011MA-100?

The BQ4011MA-100 has a typical VPFD of 4.62 V, designed for 5-V systems with ±5% supply tolerance. This threshold ensures write-protection activates before VCC drops low enough to corrupt memory operations. The value is factory-trimmed and does not require external configuration. BQ4011MA-100 maintains this specification across its commercial temperature range (0°C to 70°C).

Does BQ4011MA-100 require external components to function as nonvolatile SRAM?

No, the BQ4011MA-100 requires no external components. It integrates a CMOS SRAM core, lithium backup cell, power-fail detection circuitry, and switchover logic into a single 28-pin DIP module. Once soldered and powered, BQ4011MA-100 operates as a standard SRAM during normal conditions and autonomously preserves data during power loss without additional ICs or discrete parts.

How long does BQ4011MA-100 retain data without power?

The BQ4011MA-100 retains stored data for at least 10 years without external power, based on TI's characterization at 25°C. This retention period begins after the first application of VCC, which electrically connects the internal lithium cell. Shelf-life prior to first power-up is extended by isolation, limiting self-discharge to approximately 0.5% per year.

Is BQ4011MA-100 pin-compatible with standard 256-kb SRAMs?

Yes, the BQ4011MA-100 uses an industry-standard 28-pin DIP (MA) package with identical pinout to conventional 256-kb SRAMs. Address lines A0–A14, data lines DQ0–DQ7, and control signals CE/OE/WE map directly-enabling drop-in replacement on existing PCBs without layout changes or signal routing modifications.

What happens to BQ4011MA-100 outputs during power-down?

When VCC falls below VPFD, BQ4011MA-100 immediately places all DQ lines in high-impedance state and treats all inputs as "don't care." This prevents bus contention and unintended writes during brownout. Outputs remain in high-Z until VCC rises above VPFD and the 120 ms tCER recovery window expires, after which normal read/write operation resumes.