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Texas Instruments BQ4011YMA-100

Part No.:
BQ4011YMA-100
Manufacturer:
Texas Instruments
Category:
Memory
Package:
28-DIP Module (0.61", 15.49mm)
Datasheet:
AetrixBQ4011YMA-100.pdf
Description:
IC NVSRAM 256KBIT PARALLEL 28DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,178

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Product details

Overview

BQ4011YMA-100 from Texas Instruments is a 32 k × 8 nonvolatile SRAM (262,144-bit) with integrated lithium backup, 5-V operation, 100 ns access time, and industry-standard 28-pin DIP package. It functions as a drop-in replacement for standard SRAM in systems requiring data retention during power loss-such as industrial PLCs, medical data loggers, and telecom configuration storage.

For engineers reviewing the BQ4011YMA-100 datasheet, BQ4011YMA-100 pinout, BQ4011YMA-100 application, or BQ4011YMA-100 equivalent, key selection criteria include its 4.37 V power-fail-detect threshold, automatic write-protection on power-down, 10-year data retention without external power, and compatibility with legacy 256-kb SRAM footprints.

Technical Context

The BQ4011YMA-100 integrates a CMOS SRAM core, power-fail detection circuitry, and a sealed lithium coin cell within a single 28-pin DIP module. Its VPFD threshold is fixed at 4.37 V (typ), optimized for 5-V systems with ±10% supply tolerance.

During VCC dropout, it unconditionally disables writes, places I/O in high-Z, and switches to internal backup power at VSO ≈ 3 V. Upon VCC recovery, it enforces a 80–120 ms chip-enable recovery window (tCER) before resuming normal operation-ensuring processor stabilization.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 32 k × 8 (262,144 bits), organized as 32,768 words × 8 bits-directly replaces standard 256-kb SRAMs in legacy designs.
Access time 100 ns max-supports reliable interface with microcontrollers and ASICs operating at ≤10 MHz bus speeds.
Supply voltage 4.50 V to 5.50 V-designed for 5-V systems with ±10% tolerance; VPFD = 4.37 V ensures early write-protection before brownout.
Data retention ≥10 years without external power-enabled by isolated lithium cell with <0.5% annual self-discharge pre-activation.
Power-fail response tWPT = 40–150 µs-guarantees write-protection activation before memory corruption during rapid VCC collapse.
Operating temperature 0°C to +70°C-qualified for commercial-grade embedded applications including test equipment and point-of-sale terminals.
Standby current ISB1 = 1–2 µA (CE = VIH)-minimizes battery drain during long-term backup mode.

Pinout & Package

Package: 28-pin plastic dual-in-line (DIP) module, MA package type, 0.600-inch width, through-hole mounting.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address inputs 15-bit address bus supporting full 32 k-word addressing; compatible with standard SRAM address mapping.
DQ0–DQ7 Data input/output 8-bit bidirectional data bus; high-impedance state enforced automatically during power-fail events.
CE Chip-enable input Active-low enable; initiates tCER delay on power-up before allowing valid accesses.
WE Write-enable input Active-low control; write cycles disabled when VCC falls below VPFD, regardless of WE state.
OE Output-enable input Active-low control; outputs go high-Z if OE or CE is inactive, or during power transition.
VCC Supply voltage input Primary 5-V power rail; monitored continuously for VPFD violation triggering backup switchover.
VSS Ground System reference ground; all timing and logic thresholds referenced to this node.

Key Features

Feature Design Value
Automatic power-fail write-protection VPFD = 4.37 V (typ) triggers unconditional write-disable and I/O high-Z-prevents data corruption without firmware intervention.
Integrated lithium backup Sealed coin cell electrically isolated until first VCC application; enables >10-year data retention with <0.5%/year self-discharge pre-activation.
Industry-standard pinout 28-pin DIP layout matches JEDEC MS-011; allows direct PCB replacement of obsolete 256-kb volatile SRAMs without layout changes.
No external components required Self-contained module includes SRAM, control logic, battery, and switchover circuitry-eliminates discrete backup design complexity and BOM cost.
Unlimited write cycles Standard SRAM endurance-no wear-out mechanism like EEPROM/Flash; supports real-time logging and frequent configuration updates.

Applications

Industrial Data Logging Medical Device Configuration Storage

Use Scenario: Standalone environmental sensor node records temperature/humidity every 5 seconds and retains last 72 hours of data across AC power outages.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding volatile runtime data; retains contents during 10-second brownouts and extended off-grid periods.

Use Value: Eliminates need for EEPROM write-delay routines or battery-backed RTC+SRAM discrete solutions-reduces firmware overhead and PCB area by 40%.

Use Scenario: Portable ultrasound unit stores user calibration profiles, probe settings, and last-used imaging presets between power cycles.

IC Role / Device Role / Timing Role: Configuration memory preserving critical setup parameters; survives 10+ years without maintenance or battery replacement.

Use Value: Meets IEC 62304 Class B software safety requirements for data integrity-no risk of parameter loss during unexpected shutdown.

Telecom Base Station Management Test & Measurement Equipment

Use Scenario: Remote radio head stores SNMP MIB variables, firmware update staging flags, and fault logs during tower grid instability.

IC Role / Device Role / Timing Role: System-critical nonvolatile scratchpad; maintains state during 200-ms utility dips and generator switchover delays.

Use Value: Guarantees zero packet loss during failover-VPFD detection and tWPT response prevent partial writes that corrupt MIB counters.

Use Scenario: Bench multimeter retains user-defined measurement ranges, calibration offsets, and auto-zero history after nightly power-down.

IC Role / Device Role / Timing Role: Calibration memory with deterministic retention; immune to accidental discharge from ESD events on front-panel controls.

Use Value: Avoids recalibration labor and downtime-data remains intact even if unit sits unpowered for 18 months in warehouse storage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
DS1248W-100+ 100 ns access, 32 k × 8, 5-V, but uses external lithium battery and requires separate oscillator for real-time clock function. Includes integrated RTC; suited for timestamped logging where BQ4011YMA-100 lacks timekeeping. Select DS1248W-100+ only if RTC functionality is mandatory; otherwise BQ4011YMA-100 offers simpler integration and lower system cost.
STK15C88-100I 100 ns access, 32 k × 8, 5-V, but employs capacitor-based backup with 72-hour retention-requires external charging circuit and periodic refresh. Shorter retention window; suitable for short-duration brownout protection only-not for long-term archival. Choose STK15C88-100I for cost-sensitive, short-interval backup needs; BQ4011YMA-100 is superior for guaranteed 10-year retention without maintenance.

Compared with DS1248W-100+ and STK15C88-100I, the BQ4011YMA-100 delivers longer data retention without external components or refresh logic, making it optimal for maintenance-free, long-lifecycle industrial deployments where RTC is unnecessary.

Availability

BQ4011YMA-100 is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and telecom base station management requiring stable component supply and long-term obsolescence support.

Supply support for BQ4011YMA-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 50 years of leadership in high-reliability memory solutions.

The BQ4011YMA-100 belongs to TI's bq nonvolatile SRAM product line, engineered specifically for legacy system upgrades and industrial applications demanding seamless drop-in replacement of volatile memory with guaranteed data retention.

FAQ

What is the power-fail-detect threshold voltage for BQ4011YMA-100?

The BQ4011YMA-100 has a fixed power-fail-detect (VPFD) threshold of 4.37 V (typical), calibrated for 5-V systems with ±10% supply tolerance. This value is factory-trimmed and not adjustable. When VCC drops below VPFD, the device immediately disables writes and switches to lithium backup-ensuring no data corruption occurs during brownout conditions. The BQ4011YMA-100 does not support user-programmable VPFD settings.

Does BQ4011YMA-100 require external circuitry for battery backup operation?

No, the BQ4011YMA-100 requires no external circuitry for battery backup operation. It integrates a sealed lithium coin cell, power-fail detection logic, and automatic switchover circuitry into a single 28-pin DIP module. The internal battery is electrically isolated until first application of VCC, after which it provides seamless data retention for ≥10 years without external charging, regulation, or monitoring components.

Is BQ4011YMA-100 pin-compatible with standard 256-kb SRAMs?

Yes, the BQ4011YMA-100 uses an industry-standard 28-pin DIP pinout identical to JEDEC MS-011 and matches the pin assignments of conventional 32 k × 8 SRAMs such as the AS6C4008 or IS61LV256AL. Address lines A0–A14, data lines DQ0–DQ7, and control signals CE, OE, and WE align directly-enabling drop-in replacement on existing PCBs without layout modification.

How long does data retention last in BQ4011YMA-100 when powered off?

The BQ4011YMA-100 guarantees ≥10 years of data retention in the absence of external power, based on TI's characterization of the integrated lithium cell's shelf life and self-discharge rate (<0.5% per year pre-activation). This retention period begins after the first application of VCC, which breaks internal isolation and activates the backup circuit. Retention is specified at TA = 25°C and assumes proper handling per TI's packaging guidelines.

What is the maximum operating temperature range for BQ4011YMA-100?

The BQ4011YMA-100 is rated for commercial temperature operation from 0°C to +70°C, as confirmed in TI's ordering information and recommended operating conditions. It is not qualified for industrial (–40°C to +85°C) use-models such as BQ4011YMA-70N or BQ4011LYMA-70N are designated for extended temperature ranges. Operating the BQ4011YMA-100 outside its 0°C to +70°C range may compromise data retention or timing compliance.

BQ4011YMA-100 Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
28-DIP Module (0.61", 15.49mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-DIP Module (18.42x37.72)

BQ4011YMA-100 FAQ

1.How can I place an order for BQ4011YMA-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for BQ4011YMA-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BQ4011YMA-100 reliable?

The price and inventory of BQ4011YMA-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ4011YMA-100 is usually 5 days.

3.What payment methods are accepted for BQ4011YMA-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ4011YMA-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BQ4011YMA-100?

BQ4011YMA-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BQ4011YMA-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BQ4011YMA-100?

For technical support, including BQ4011YMA-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ4011YMA-100 requirements.

6.How does Aetrix verify that BQ4011YMA-100 is sourced from the original manufacturer or authorized distributors?

All BQ4011YMA-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ4011YMA-100 meets industry standards.

7.What is the process for return or replacement of BQ4011YMA-100?

All BQ4011YMA-100 units undergo pre-shipment inspection (PSI). If there is an issue with BQ4011YMA-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BQ4011YMA-100 part is unused and in its original packaging.

Return procedure for BQ4011YMA-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BQ4011YMA-100 Tags

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