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Texas Instruments BQ4013MA-85
- Part No.:
- BQ4013MA-85
- Manufacturer:
- Texas Instruments
- Category:
- Memory
- Package:
- 32-DIP Module (0.610", 15.49mm)
- Datasheet:
-
BQ4013MA-85.pdf
- Description:
- IC NVSRAM 1MBIT PAR 32DIP MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:1,756
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Product details
Overview
BQ4013MA-85 from Texas Instruments is a 128 k × 8 (1,048,576-bit) nonvolatile SRAM with integrated lithium backup, 5-V operation, 85 ns access time, and automatic write-protection during power transitions-used in industrial control data logging where persistent memory retention without external circuitry is required.
For engineers reviewing the BQ4013MA-85 datasheet, BQ4013MA-85 pinout, BQ4013MA-85 application, or BQ4013MA-85 equivalent, key selection considerations include VPFD = 4.62 V (typ), tCER = 120 ms max on power-up, 10-year data retention, and compatibility with standard 32-pin DIP layouts for legacy system upgrades and embedded instrumentation.
Technical Context
The BQ4013MA-85 integrates a CMOS SRAM core with autonomous power-fail detection and lithium cell switching logic. It monitors VCC against VPFD = 4.62 V (typ) and initiates write-protection within tWPT ≤ 150 µs when voltage drops below threshold.
During power-down, outputs enter high-impedance state, inputs are ignored, and internal lithium supply sustains memory until VCC returns; on power-up, write-protection remains active for tCER ≤ 120 ms to ensure processor stabilization before resuming normal operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 128 k × 8 (1,048,576 bits) - supports full byte-wide addressing for firmware parameter storage and real-time data buffers. |
| Access time | 85 ns - enables direct interfacing with 12-MHz microcontrollers without wait states in legacy industrial controllers. |
| Supply voltage | 4.75–5.50 V - compatible with standard 5-V TTL/CMOS systems and tolerant of ±5% rail variation. |
| Power-fail detect (VPFD) | 4.62 V (typ) - triggers deterministic write-protection before brownout affects system logic or memory integrity. |
| Data retention | ≥10 years without VCC - achieved via isolated lithium coin cell with <0.5% annual self-discharge pre-activation. |
| Standby current | 1–2 µA (ISB1) - minimizes battery drain during extended offline periods in unpowered instrumentation. |
| Operating temperature | 0°C to 70°C - qualified for commercial-grade embedded applications including test equipment and programmable logic modules. |
Pinout & Package
32-pin DIP module (MA package), through-hole mounting, 0.6-inch width, industry-standard footprint compatible with legacy PCB layouts and socket-based prototyping.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128 k-word decoding; A16 used only in expanded configurations. |
| DQ0–DQ7 | Data input/output | 8-bit bidirectional data bus with CMOS-compatible I/O levels and ±1 µA leakage. |
| CE | Chip-enable input | Active-low enable controlling device selection; drives high-impedance state when deasserted. |
| WE | Write enable input | Active-low signal qualifying write cycles; must overlap CE low for valid write initiation. |
| OE | Output enable input | Active-low control for output drivers; allows read data gating independent of chip select. |
| VCC | Supply voltage input | Primary 5-V power rail; monitored continuously for VPFD threshold violation. |
| VSS | Ground | Reference return path for all digital and backup circuitry; shared with lithium cell cathode. |
| NC | No connect | Pins 1 and 30 are unconnected; must remain floating per TI design specification. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic write-protection | Hardware-enforced lockout triggered by VCC drop below 4.62 V, eliminating need for external supervisor ICs or firmware intervention. |
| Integrated lithium backup | Factory-sealed coin cell electrically isolated until first VCC application, ensuring >10-year shelf life and zero pre-activation discharge. |
| Standard SRAM interface | Pin- and timing-compatible with industry-standard 1-Mb SRAMs, enabling drop-in replacement in existing 32-pin DIP designs. |
| Zero external components | Self-contained power monitoring, switching, and retention logic-no capacitors, diodes, or regulators required for basic operation. |
| Power-up recovery delay | tCER ≤ 120 ms guarantees write-protection remains active while host CPU initializes clocks, peripherals, and memory controllers. |
Applications
| Industrial Data Loggers | Programmable Logic Controllers (PLCs) |
|---|---|
|
Use Scenario: Continuous capture of sensor readings and operational events during mains power loss. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory preserving last-known state, calibration tables, and fault history across unplanned outages. Use Value: Eliminates need for external EEPROM writes or battery-backed RAM controllers-reduces BOM count and improves field reliability. |
Use Scenario: Storing ladder logic configuration, I/O mapping, and runtime variables in modular PLC backplanes. IC Role / Device Role / Timing Role: Byte-addressable SRAM with guaranteed data retention during hot-swap module insertion or power cycling. Use Value: Enables deterministic restart after power interruption without reinitialization delays or configuration reload overhead. |
| Metering and Energy Monitoring | Test and Measurement Equipment |
|
Use Scenario: Recording cumulative kWh, demand peaks, and tamper events in smart electricity meters with regulatory compliance requirements. IC Role / Device Role / Timing Role: Tamper-resistant memory holding billing-critical data during meter battery replacement or grid instability. Use Value: Meets ANSI C12.1 and IEC 62056 retention mandates via intrinsic 10-year lithium-backed storage-no external certification burden. |
Use Scenario: Preserving instrument calibration coefficients, user presets, and acquisition buffers between power cycles in benchtop oscilloscopes and analyzers. IC Role / Device Role / Timing Role: High-speed SRAM serving as volatile configuration store with seamless nonvolatile fallback during shutdown sequences. Use Value: Reduces boot time by 300+ ms versus EEPROM-based restore; avoids wear-out limits of flash-based NVRAM alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK13C68-J15 | 128 k × 8 NVSRAM, 150 ns access, 5-V only, no 3.3-V variant; uses capacitor-based backup instead of lithium cell. | Limited to shorter retention (<1 year typical) and requires external supercapacitor charging circuitry. | Choose when long-term retention is secondary to lower cost and RoHS-compliant capacitor-only solution. |
| DS1248W-120+ | 128 k × 8 NVSRAM, 120 ns access, 5-V, integrated lithium + real-time clock; larger 28-pin SOIC package. | Includes RTC functionality but lacks DIP form factor and requires additional board space and layout changes. | Choose only if RTC integration is mandatory and DIP footprint is not required for legacy compatibility. |
Compared with STK13C68-J15 and DS1248W-120+, the BQ4013MA-85 delivers superior 10-year retention in a drop-in 32-pin DIP package with no external components-making it uniquely suited for retrofitting aging industrial hardware where board real estate and qualification timelines are constrained.
Availability
BQ4013MA-85 is available at Aetrix Electronics and suitable for industrial data loggers, programmable logic controllers, and energy metering systems requiring stable component supply amid TI's LIFEBUY status.
Supply support for BQ4013MA-85 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and communications markets since 1930.
The BQ4013MA-85 belongs to TI's legacy nonvolatile SRAM product line, engineered specifically for industrial instrumentation and control systems needing reliable, maintenance-free memory retention without software or external supervision.
FAQ
What is the guaranteed data retention period for BQ4013MA-85?
The BQ4013MA-85 provides ≥10 years of data retention in the absence of VCC, based on TI's characterization of its internal lithium cell under TA = 25°C conditions. This retention assumes the device has been powered at least once to activate the battery; prior to first power application, self-discharge is <0.5% per year. The BQ4013MA-85 datasheet specifies this value under Table 4, tDR parameter.
Does BQ4013MA-85 support 3.3-V operation?
No, the BQ4013MA-85 is rated exclusively for 5-V operation (VCC = 4.75–5.50 V) and uses VPFD = 4.62 V (typ) for power-fail detection. For 3.3-V systems, TI offers the BQ4013LYMA-70N variant, which has VPFD = 2.90 V and VCC = 3.00–3.60 V. The BQ4013MA-85 pinout and timing are incompatible with 3.3-V signaling levels.
Is BQ4013MA-85 pin-compatible with standard 1-Mb SRAMs?
Yes, the BQ4013MA-85 uses an industry-standard 32-pin DIP pinout matching JEDEC MS-011AC, including identical placement of A0–A15, DQ0–DQ7, CE, OE, WE, VCC, and VSS. Pin A16 and NC positions align with extended-address SRAM footprints, enabling direct substitution in existing 1-Mb SRAM layouts without PCB modification.
What happens to BQ4013MA-85 outputs during power failure?
When VCC falls below VPFD = 4.62 V, the BQ4013MA-85 immediately places all DQ0–DQ7 pins into high-impedance state and ignores all address and control inputs. This prevents bus contention and unintended writes. The BQ4013MA-85 maintains this state until VCC rises above VPFD and tCER (≤120 ms) expires, ensuring clean transition back to active mode.
Can BQ4013MA-85 be used in new designs despite TI's LIFEBUY status?
Yes-TI's LIFEBUY status indicates planned discontinuation but authorizes volume purchases for ongoing production. Aetrix Electronics supports lifetime-buy planning, extended inventory holds, and BOM continuity management for the BQ4013MA-85, making it viable for sustaining legacy systems and medium-term deployments where redesign is impractical.
BQ4013MA-85 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 32-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 85ns
- Access Time:
- 85 ns
- Voltage - Supply:
- 4.75V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-DIP Module (18.42x42.8)
BQ4013MA-85 FAQ
1.How can I place an order for BQ4013MA-85 through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ4013MA-85 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ4013MA-85 reliable?
The price and inventory of BQ4013MA-85 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ4013MA-85 is usually 5 days.
3.What payment methods are accepted for BQ4013MA-85?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ4013MA-85 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ4013MA-85?
BQ4013MA-85 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ4013MA-85 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ4013MA-85?
For technical support, including BQ4013MA-85 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ4013MA-85 requirements.
6.How does Aetrix verify that BQ4013MA-85 is sourced from the original manufacturer or authorized distributors?
All BQ4013MA-85 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ4013MA-85 meets industry standards.
7.What is the process for return or replacement of BQ4013MA-85?
All BQ4013MA-85 units undergo pre-shipment inspection (PSI). If there is an issue with BQ4013MA-85, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ4013MA-85 part is unused and in its original packaging.
Return procedure for BQ4013MA-85:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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