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Texas Instruments BQ4013YMA-70
- Part No.:
- BQ4013YMA-70
- Manufacturer:
- Texas Instruments
- Category:
- Memory
- Package:
- 32-DIP Module (0.610", 15.49mm)
- Datasheet:
-
BQ4013YMA-70.pdf
- Description:
- IC NVSRAM 1MBIT PAR 32DIP MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:2,250
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Product details
Overview
BQ4013YMA-70 from Texas Instruments is a 128 k × 8 nonvolatile SRAM (131,072 words × 8 bits) with integrated lithium backup, 5-V operation, 70 ns access time, and automatic write-protection during power-up/down - used in industrial control systems requiring persistent memory without external battery management.
For engineers reviewing the BQ4013YMA-70 datasheet, BQ4013YMA-70 pinout, BQ4013YMA-70 application, or BQ4013YMA-70 equivalent, key selection criteria include VPFD threshold (4.37 V), data retention (>10 years), DIP-32 package compatibility, and absence of external circuitry requirements.
Technical Context
The BQ4013YMA-70 integrates a CMOS SRAM core with on-module lithium coin cell and analog power-fail detection circuitry. It monitors VCC continuously and triggers automatic write-protection when voltage falls below VPFD = 4.37 V (typ), then switches to internal backup supply at VSO ≈ 3 V.
During valid VCC operation, it behaves as a standard asynchronous SRAM with CE/OE/WE control logic and full read/write timing compliance. Upon VCC recovery, tCER = 80 ms (max) ensures processor stabilization before resuming writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 k × 8 (1,048,576-bit SRAM organized as 131,072 words × 8 bits) |
| Access Time | 70 ns - guarantees minimum read/write cycle timing for 14.3 MHz bus interface |
| Supply Voltage | 4.50 V to 5.50 V - supports 5-V systems with ±5% tolerance |
| Power-Fail Threshold | VPFD = 4.37 V (typ) - triggers write-protection before brownout corrupts data |
| Data Retention | >10 years without VCC - enabled by isolated lithium cell with <0.5% annual self-discharge pre-activation |
| Standby Current | ISB1 = 2 µA max (CE = VIH) - enables ultra-low-power hold mode in battery-backed systems |
| Operating Temp | 0 °C to 70 °C - qualified for commercial-temperature industrial control and instrumentation |
Pinout & Package
32-pin dual in-line package (DIP), MA package type, through-hole mounting. Pin 16 = VSS (ground), Pin 32 = VCC (5-V supply), all address/data pins follow JEDEC-standard 1-Mb SRAM layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131,072-word addressing (A16 used only in extended modes) |
| DQ0–DQ7 | Data input/output | 8-bit bidirectional data bus compatible with standard microprocessor data paths |
| CE | Chip-enable input | Active-low enable controlling device selection; initiates tCER delay on deassertion during power-up |
| OE | Output-enable input | Active-low control for output buffer; high-Z state prevents bus contention during standby |
| WE | Write-enable input | Active-low signal qualifying write cycles; combined with CE determines write initiation timing |
| VCC / VSS | Power / Ground | Single 5-V supply rail; no separate backup supply required - internal lithium managed autonomously |
| NC | No-connect | Pins 1 and 30 are unconnected; must remain floating per TI design |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Write-Protection | Hardware-enforced data lockout below VPFD = 4.37 V, eliminating firmware-level brownout handlers |
| Integrated Lithium Backup | Factory-sealed coin cell electrically isolated until first VCC application - zero shelf-life degradation |
| Industry-Standard Pinout | 32-pin DIP layout matches 1-Mb SRAM footprint - drop-in replacement for legacy volatile SRAMs |
| Unlimited Write Cycles | SRAM core enables infinite rewrites vs. EEPROM endurance limits - critical for logging and configuration storage |
| No External Components Required | Self-contained power monitoring, switching, and backup - reduces BOM count and PCB area |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing runtime parameters and calibration data in programmable logic controllers during unexpected AC loss. IC Role / Device Role / Timing Role: Nonvolatile memory holding I/O mapping tables and fault history with zero write latency. Use Value: Eliminates need for external EEPROM + supervisor IC, reducing system cost and failure points while guaranteeing data integrity across 10+ year product life. |
Use Scenario: Preserving user-defined therapy settings and device serialization in portable infusion pumps. IC Role / Device Role / Timing Role: Persistent configuration register bank retaining values across battery swaps and shutdowns. Use Value: Meets IEC 62304 Class C software safety requirements via hardware-enforced write-protection during power transitions. |
| Telecom Base Station Alarms | Automotive Diagnostic Module Memory |
|
Use Scenario: Capturing last-known operational state and alarm timestamps in remote radio units during grid instability. IC Role / Device Role / Timing Role: Fault-tolerant event logger synchronized to master clock with sub-microsecond write enable. Use Value: Provides deterministic 70 ns access for real-time alarm buffering without DMA overhead or flash wear leveling. |
Use Scenario: Storing OBD-II trouble codes and freeze-frame data in engine control modules between ignition cycles. IC Role / Device Role / Timing Role: Battery-backed RAM preserving diagnostic records even after vehicle battery disconnection. Use Value: Achieves >10-year data retention without parasitic drain - exceeds ISO 16750-2 cold-cranking voltage dip immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK13C68-JW35 | 45 ns access, 3.3-V/5-V dual supply, no integrated battery - requires external Li coin cell and charge circuit | Suitable for designs needing faster timing but accepting added complexity and board space | Select if 45 ns speed is mandatory and external backup management is acceptable |
| DS1248W-120+ | 120 ns access, 5-V only, integrated lithium, but uses obsolete ceramic DIP-28 package | Legacy replacement where pin spacing and thermal profile match older PCBs | Choose only for direct footprint compatibility in end-of-life board refreshes |
Compared with STK13C68-JW35 and DS1248W-120+, the BQ4013YMA-70 offers optimal balance of speed (70 ns), integration (no external components), and modern DIP-32 packaging - making it preferred for new commercial-temperature industrial designs despite its OBSOLETE status.
Availability
BQ4013YMA-70 is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, and telecom infrastructure requiring stable component supply despite TI's OBSOLETE status.
Supply support for BQ4013YMA-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company founded in 1930, specializing in analog, embedded processing, and power management ICs with broad industrial and automotive qualification.
The BQ4013YMA-70 belongs to TI's legacy nonvolatile SRAM product line, designed specifically for systems needing seamless, low-latency, battery-backed memory without firmware intervention or external supervision circuits.
FAQ
What is the guaranteed data retention period for BQ4013YMA-70?
The BQ4013YMA-70 provides guaranteed data retention of more than 10 years in the absence of VCC, based on TI's characterization of the internal lithium cell's self-discharge rate (<0.5% per year when isolated pre-activation). This value assumes operation within specified temperature range (0 °C to 70 °C) and proper initial VCC application to activate the backup circuitry. The BQ4013YMA-70 datasheet confirms this under Table 4, tDR parameter.
Does BQ4013YMA-70 require external circuitry for battery backup operation?
No, the BQ4013YMA-70 requires no external circuitry - it integrates both the SRAM core and lithium coin cell within a single 32-pin DIP module. The internal power-fail detection, switch-over logic, and isolation circuitry are fully autonomous. TI explicitly states "The bq4013/Y/LY requires no external circuitry" in the General Description section of the SLUS121A datasheet. This eliminates design risk associated with discrete backup solutions.
What is the power-fail detect threshold (VPFD) for BQ4013YMA-70?
The BQ4013YMA-70 has a nominal VPFD of 4.37 V, optimized for 5-V systems with 10% supply tolerance. This threshold is factory-trimmed and specified in the DC Electrical Characteristics table (page 5 of SLUS121A). When VCC drops below this level, the device immediately enters write-protected mode and activates the internal lithium supply. The BQ4013YMA-70 differs from the base BQ4013 (VPFD = 4.62 V) and BQ4013LY (VPFD = 2.90 V) variants.
Is BQ4013YMA-70 pin-compatible with standard 1-Mb SRAMs?
Yes, the BQ4013YMA-70 uses an industry-standard 32-pin DIP pinout matching JEDEC 1-Mb SRAMs (e.g., AS6C1008, CY62128). Address lines A0–A15, data lines DQ0–DQ7, and control signals CE/OE/WE align identically. Pin 31 = A15, Pin 2 = A16 (not used in 128k×8 mode), and Pins 1/30 = NC - all confirmed in Table 1 (Terminal Functions) of the datasheet. This allows direct substitution in existing layouts.
Why is BQ4013YMA-70 marked 'Not Recommended For New Designs'?
The BQ4013YMA-70 is classified as OBSOLETE per TI's Package Option Addendum (dated 6-Nov-2014), meaning TI has discontinued production. Its 'Not Recommended For New Designs' status reflects TI's strategic shift toward newer nvSRAM families (e.g., RV40xx) and reduced demand for DIP-packaged memory. However, Aetrix Electronics maintains active inventory and supply-chain continuity support for legacy industrial programs still dependent on the BQ4013YMA-70.
BQ4013YMA-70 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 32-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-DIP Module (18.42x42.8)
BQ4013YMA-70 FAQ
1.How can I place an order for BQ4013YMA-70 through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ4013YMA-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ4013YMA-70 reliable?
The price and inventory of BQ4013YMA-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ4013YMA-70 is usually 5 days.
3.What payment methods are accepted for BQ4013YMA-70?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ4013YMA-70 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ4013YMA-70?
BQ4013YMA-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ4013YMA-70 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ4013YMA-70?
For technical support, including BQ4013YMA-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ4013YMA-70 requirements.
6.How does Aetrix verify that BQ4013YMA-70 is sourced from the original manufacturer or authorized distributors?
All BQ4013YMA-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ4013YMA-70 meets industry standards.
7.What is the process for return or replacement of BQ4013YMA-70?
All BQ4013YMA-70 units undergo pre-shipment inspection (PSI). If there is an issue with BQ4013YMA-70, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ4013YMA-70 part is unused and in its original packaging.
Return procedure for BQ4013YMA-70:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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