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Texas Instruments BQ4013YMA-85
- Part No.:
- BQ4013YMA-85
- Manufacturer:
- Texas Instruments
- Category:
- Memory
- Package:
- 32-DIP Module (0.610", 15.49mm)
- Datasheet:
-
BQ4013YMA-85.pdf
- Description:
- IC NVSRAM 1MBIT PAR 32DIP MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:2,745
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Product details
Overview
BQ4013YMA-85 from Texas Instruments is a 128 k × 8 (1,048,576-bit) nonvolatile static RAM with integrated lithium backup, 5-V operation, 85 ns access time, and automatic write-protection during power-up/down - deployed in industrial instrumentation for real-time parameter storage across brownout events.
For engineers reviewing the BQ4013YMA-85 datasheet, BQ4013YMA-85 pinout, BQ4013YMA-85 application, or BQ4013YMA-85 equivalent, this page delivers verified timing thresholds (VPFD = 4.37 V), retention duration (≥10 years), DIP-32 package mapping, and functional alternatives for legacy system maintenance and replacement design.
Technical Context
The BQ4013YMA-85 integrates a CMOS SRAM core with on-module lithium coin cell and analog power-fail detection circuitry. It monitors VCC continuously and triggers automatic write-protection when voltage falls below VPFD = 4.37 V (typ), then switches to internal backup supply at VSO ≈ 3 V.
During valid VCC operation, it behaves as a standard asynchronous SRAM with CE/OE/WE control logic and full read/write cycle compatibility. Upon VCC recovery, it enforces tCER = 80 ms (max) write-protection delay to ensure processor stabilization before resuming normal access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 k × 8 (1,048,576 bits) - supports full byte-wide data storage without external multiplexing. |
| Access Time | 85 ns - enables direct interface with legacy microcontrollers running at ≤12 MHz bus clocks. |
| Supply Voltage | 4.5 V to 5.5 V - compatible with standard 5-V TTL/CMOS systems with ±5% tolerance. |
| Power-Fail Threshold | VPFD = 4.37 V (typ) - calibrated for reliable early detection in 5-V systems with 10% supply variation. |
| Data Retention | ≥10 years without VCC - sustained by isolated lithium cell activated only after first power application. |
| Standby Current | ISB1 = 2 µA max (CE = VIH) - minimizes battery drain during long-term backup mode. |
| Operating Temp | 0 °C to 70 °C - qualified for commercial-grade embedded control and test equipment environments. |
Pinout & Package
Package: 32-pin DIP module (MA package), through-hole mounting, 0.6-inch width, industry-standard footprint compatible with legacy PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128 k-word addressing; A16 is MSB for extended memory maps. |
| DQ0–DQ7 | Data input/output | 8-bit bidirectional data bus; high-impedance during write-protection or chip disable. |
| CE | Chip-enable input | Active-low enable controlling device selection; initiates tCER delay on power-up recovery. |
| OE | Output-enable input | Active-low control for output drivers; allows read-data gating independent of CE state. |
| WE | Write-enable input | Active-low signal qualifying write cycles; held high during read operations. |
| VCC | Supply voltage input | Primary 5-V power rail; monitored for VPFD threshold crossing to trigger backup switchover. |
| VSS | Ground | Reference return path for all digital and analog circuitry including power-fail comparator. |
| NC | No connect | Pins 1 and 30 are unconnected - no internal bonding or routing; must remain floating. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Write-Protection | Hardware-enforced data lockout triggered at VPFD = 4.37 V, eliminating need for external supervisor ICs or firmware intervention. |
| Integrated Lithium Backup | On-module coin cell electrically isolated until first VCC application - ensures >10-year shelf life and zero self-discharge pre-activation. |
| Standard SRAM Interface | Pin- and timing-compatible with industry-standard 1-Mb SRAMs (e.g., AS6C1008), enabling drop-in replacement in existing designs. |
| Zero External Components Required | Self-contained power monitoring, switching, and retention - no external capacitors, regulators, or battery management circuitry needed. |
| High-Z Output During Fault | All DQ pins enter high-impedance state immediately upon VPFD detection - prevents bus contention during power collapse. |
Applications
| Industrial Data Loggers | Medical Diagnostic Equipment |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings (temperature, pressure, flow) during mains interruption in portable analyzers. IC Role / Device Role / Timing Role: Nonvolatile scratchpad storing last valid calibration coefficients and timestamped event logs during AC dropout. Use Value: Preserves critical diagnostic history without requiring supercapacitor hold-up or complex power sequencing. |
Use Scenario: Storing patient-specific configuration profiles and runtime error codes in bedside monitors with intermittent power. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining volatile setup data across unplanned shutdowns and transport-induced power loss. Use Value: Eliminates reconfiguration delays and ensures regulatory-compliant audit trail continuity per IEC 62304. |
| Telecom Line Cards | Programmable Logic Controllers |
|
Use Scenario: Maintaining port provisioning tables and alarm status registers during brief utility outages in DSLAM chassis. IC Role / Device Role / Timing Role: Fast-access NVSRAM holding real-time line state and service-level agreement counters. Use Value: Enables sub-100 ms failover response while preserving billing-relevant uptime metrics across power cycles. |
Use Scenario: Saving ladder logic scan states and I/O mapping during factory floor power flickers in automotive assembly PLCs. IC Role / Device Role / Timing Role: Deterministic nonvolatile buffer ensuring deterministic restart from last known-safe scan point. Use Value: Prevents machine motion faults and eliminates manual reset procedures after transient grid disturbances. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK13C68-J15F | 128 k × 8 NVSRAM, 150 ns access, 5-V only, no 3.3-V variant; uses capacitor-based backup. | Limited to shorter retention (<5 years); requires external capacitor charging circuit and larger board area. | Prefer where long-term data integrity is secondary to cost-sensitive, low-volume replacements. |
| DS1248W-120+ | 128 k × 8 NVSRAM, 120 ns access, 5-V only, integrated lithium with 10-year retention; different pinout (28-pin SOIC). | Requires PCB redesign due to incompatible DIP-32 footprint and altered address/data pin mapping. | Select only if board revision is feasible and higher temperature range (–40°C to 85°C) is required. |
Compared with BQ4013YMA-85, STK13C68-J15F trades retention longevity for lower bill-of-materials cost, while DS1248W-120+ offers wider temperature support but mandates mechanical redesign - making BQ4013YMA-85 optimal for drop-in maintenance of legacy 5-V DIP-based systems.
Availability
BQ4013YMA-85 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic equipment, telecom line cards, programmable logic controllers, and embedded instrumentation requiring stable component supply amid end-of-life transitions.
Supply support for BQ4013YMA-85 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on reliability, longevity, and industrial-grade qualification.
The BQ4013YMA-85 belongs to TI's legacy nonvolatile SRAM product line, engineered specifically for seamless integration into 5-V systems needing guaranteed data retention during unpredictable power loss - targeting instrumentation, telecom infrastructure, and factory automation.
FAQ
What is the guaranteed data retention period for BQ4013YMA-85 under zero-power conditions?
The BQ4013YMA-85 guarantees ≥10 years of data retention without external power, based on TI's characterization of the integrated lithium cell after first activation. This value assumes operation at TA = 25°C and accounts for self-discharge post-isolation break; actual field retention may extend beyond 10 years depending on ambient temperature and usage history. The BQ4013YMA-85 achieves this via factory-isolated battery architecture that minimizes pre-use degradation.
Does BQ4013YMA-85 support 3.3-V operation?
No, BQ4013YMA-85 is specified exclusively for 5-V operation (VCC = 4.5 V to 5.5 V) and uses VPFD = 4.37 V for power-fail detection - optimized for 5-V systems with 10% supply tolerance. For 3.3-V compatibility, TI offers the BQ4013LYMA-70N variant, which has distinct marking, VPFD = 2.90 V, and industrial temperature rating. The BQ4013YMA-85 must not be operated below 4.5 V or above 5.5 V.
What happens to the DQ pins during power-fail detection on BQ4013YMA-85?
When VCC crosses VPFD = 4.37 V downward, the BQ4013YMA-85 immediately places all DQ0–DQ7 pins into high-impedance state to prevent bus contention. Inputs (address, CE, OE, WE) are treated as "don't care", and no further read or write cycles are acknowledged. This behavior is hardware-autonomous and requires no external control - a core safety feature of the BQ4013YMA-85 design.
Is BQ4013YMA-85 pin-compatible with standard 1-Mb SRAMs?
Yes, the BQ4013YMA-85 uses an industry-standard 32-pin DIP pinout matching common 1-Mb SRAMs like the AS6C1008 and CY62128EV30. Address lines A0–A16, data lines DQ0–DQ7, and control signals CE/OE/WE occupy identical positions. This enables direct PCB-level replacement in legacy designs without layout modification - a key advantage of the BQ4013YMA-85 for maintenance upgrades.
What is the purpose of the NC pins on BQ4013YMA-85?
Pins 1 and 30 on the BQ4013YMA-85 are designated NC (No Connect) and contain no internal bonding or electrical connection. They must remain unconnected on the PCB - neither tied to VCC, VSS, nor left floating with pull-ups/downs. TI specifies these pins as mechanically reserved for package integrity and thermal relief; routing or loading them violates the BQ4013YMA-85's validated electrical behavior and may compromise long-term reliability.
BQ4013YMA-85 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 32-DIP Module (0.610", 15.49mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 85ns
- Access Time:
- 85 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-DIP Module (18.42x42.8)
BQ4013YMA-85 FAQ
1.How can I place an order for BQ4013YMA-85 through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ4013YMA-85 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ4013YMA-85 reliable?
The price and inventory of BQ4013YMA-85 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ4013YMA-85 is usually 5 days.
3.What payment methods are accepted for BQ4013YMA-85?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ4013YMA-85 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ4013YMA-85?
BQ4013YMA-85 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ4013YMA-85 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ4013YMA-85?
For technical support, including BQ4013YMA-85 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ4013YMA-85 requirements.
6.How does Aetrix verify that BQ4013YMA-85 is sourced from the original manufacturer or authorized distributors?
All BQ4013YMA-85 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ4013YMA-85 meets industry standards.
7.What is the process for return or replacement of BQ4013YMA-85?
All BQ4013YMA-85 units undergo pre-shipment inspection (PSI). If there is an issue with BQ4013YMA-85, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ4013YMA-85 part is unused and in its original packaging.
Return procedure for BQ4013YMA-85:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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