Texas Instruments BQ4014MB-120

Overview

BQ4014MB-120 from Texas Instruments is a 256K × 8 nonvolatile static RAM (NVSRAM) with integrated lithium backup, 120 ns access time, 5% supply tolerance, and industry-standard 32-pin DIP module packaging. It operates as a standard SRAM under valid 5 V power and automatically switches to battery-backed retention during power loss-used in industrial control data logging where persistent memory without write endurance limits is required.

For engineers reviewing the BQ4014MB-120 datasheet, BQ4014MB-120 pinout, BQ4014MB-120 application, or BQ4014MB-120 equivalent, key selection criteria include power-fail detection threshold (4.62 V), 10-year data retention, write-protection timing (tWPT = 150 µs max), and compatibility with conventional 2 Mb SRAM interfaces in legacy systems.

Technical Context

The BQ4014MB-120 integrates CMOS SRAM with on-board lithium coin cells and real-time power-fail monitoring circuitry. It continuously monitors VCC against VPFD = 4.62 V (typical) and initiates automatic write-protection and backup power switchover when voltage drops below that threshold.

During power-up, it enforces a 120 ms chip-enable recovery window (tCER) before allowing writes, ensuring processor stabilization. The device uses no external components, maintains high-impedance I/O during protection mode, and supports unlimited write cycles while preserving data for ≥10 years without system power.

Key Specifications

Pinout & Package

Package: 32-pin plastic dual-in-line module (MB type), 0.600" width, through-hole mounting. Dimensions conform to MPDI062 mechanical drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with BQ4014YMB-120 and DS1248-120+, the BQ4014MB-120 offers tighter VPFD matching for 5%-tolerant 5 V rails and eliminates external battery routing-reducing layout complexity and field failure modes associated with connectorized backup power.

Availability

BQ4014MB-120 is available at Aetrix Electronics and suitable for industrial control data logging, medical device configuration storage, telecom alarm capture, and avionics black box memory requiring stable component supply across long-lifecycle programs.

Supply support for BQ4014MB-120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions, with leadership in power management, signal chain, and microcontrollers.

The BQ4014MB-120 belongs to TI's legacy nonvolatile SRAM product line, engineered specifically for mission-critical data retention in industrial, medical, and telecom infrastructure where EEPROM endurance or Flash latency are unacceptable.

FAQ

What is the guaranteed data retention period for BQ4014MB-120 without system power?

The BQ4014MB-120 guarantees ≥10 years of data retention in the absence of VCC, measured from the first application of power. This is achieved using electrically isolated lithium coin cells that activate only after initial VCC application, limiting self-discharge to ~0.5% per year in storage.

Does BQ4014MB-120 require external circuitry to function as a nonvolatile SRAM?

No. The BQ4014MB-120 integrates all necessary power-fail detection, write-protection logic, and lithium backup switching circuitry. It requires only a single +5 V supply and standard SRAM control signals-no external supervisors, batteries, or diodes are needed for full nonvolatile operation.

What is the power-fail detect voltage (VPFD) for BQ4014MB-120, and how does it affect system design?

The BQ4014MB-120 has a VPFD of 4.62 V (typical), optimized for systems with ±5% 5 V supply tolerance. Designers must ensure their power supply remains above this threshold during normal operation; crossing below it initiates automatic write-protection and backup switchover within 150 µs.

How does BQ4014MB-120 handle write operations during power-up?

After VCC rises above VPFD, the BQ4014MB-120 enforces a 120 ms chip-enable recovery window (tCER). During this period, the device remains write-protected-even if CE, WE, and OE are asserted-to allow host processor stabilization before resuming normal SRAM operation.

Is BQ4014MB-120 pin-compatible with standard 256K × 8 SRAMs?

Yes. The BQ4014MB-120 uses the industry-standard 32-pin 256K × 8 pinout, including identical A0–A17, DQ0–DQ7, CE, OE, WE, VCC, and VSS assignments. It replaces conventional SRAMs in existing sockets without PCB modification, provided the system accommodates its 120 ns timing and 5 V supply requirements.