Texas Instruments BQ4014YMB-120

Overview

BQ4014YMB-120 from Texas Instruments is a nonvolatile 256K × 8 (2,097,152-bit) SRAM with integrated lithium backup, 120 ns access time, -10% supply tolerance (VPFD = 4.37 V), and industry-standard 32-pin MB module packaging. It operates as standard SRAM during normal power and automatically preserves data during power loss in industrial control memory logging applications.

For engineers reviewing the BQ4014YMB-120 datasheet, BQ4014YMB-120 pinout, BQ4014YMB-120 application, or BQ4014YMB-120 equivalent, key selection criteria include power-fail detection threshold, write-protection timing (tWPT = 100 µs typ), data retention duration (10 years), and compatibility with conventional 2 Mb SRAM interfaces without external circuitry.

Technical Context

The BQ4014YMB-120 integrates CMOS SRAM with on-board lithium coin cells and autonomous power-fail monitoring circuitry. It detects VCC drop below VPFD = 4.37 V (typ), initiates write-protection within tWPT = 100 µs (typ), and switches to internal backup supply at VSO = 3 V to sustain memory state.

Upon power restoration, it enforces tCER = 120 ms (max) write-protection window for processor stabilization before resuming normal operation. The device requires no external components and maintains full compatibility with standard 2 Mb SRAM timing and control signals (CE/OE/WE).

Key Specifications

Pinout & Package

Package: 32-pin MB (B-type module), plastic dual-in-line format (DIP MOD), dimensions 2.100″ × 0.740″ × 0.375″ (53.34 mm × 18.80 mm × 9.53 mm), RoHS-compliant CU SN finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with BQ4014MB-120 and DS1248-120+, the BQ4014YMB-120 uniquely supports 10% supply tolerance systems without derating, delivers guaranteed 10-year retention after first power-on, and maintains exact pinout compatibility with industry-standard 2 Mb SRAM sockets-enabling direct field upgrades in existing designs.

Availability

BQ4014YMB-120 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, avionics black box memory, and telecom base station event buffering requiring stable component supply across extended product lifecycles.

Supply support for BQ4014YMB-120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and communications markets.

The BQ4014YMB-120 belongs to TI's Benchmarq nonvolatile SRAM product line, engineered specifically for mission-critical data retention in systems where power interruption is frequent or unpredictable.

FAQ

What is the power-fail detection threshold for BQ4014YMB-120?

The BQ4014YMB-120 monitors VCC for a power-fail-detect threshold (VPFD) of 4.37 V typical, designed for systems with ±10% 5 V supply tolerance. This value is factory-trimmed and specified over temperature (4.30–4.50 V min–max). The threshold triggers automatic write-protection and backup power activation, ensuring data integrity before VCC drops below operational levels. BQ4014YMB-120 implements this behavior without external components.

How long does BQ4014YMB-120 retain data without power?

The BQ4014YMB-120 provides minimum 10-year data retention in the absence of VCC, measured from the first application of power onward. Internal lithium cells are electrically isolated until initial VCC application, limiting self-discharge to ~0.5% per year in storage. After first use, the backup circuit sustains memory contents continuously during power loss, with retention validated under TA = 25°C per TI datasheet specification.

Is BQ4014YMB-120 pin-compatible with standard 256K × 8 SRAMs?

Yes, BQ4014YMB-120 uses an industry-standard 32-pin 256K × 8 pinout and is fully compatible with conventional SRAM controllers. Its A0–A17, DQ0–DQ7, CE, OE, WE, VCC, and VSS assignments match JEDEC-standard 2 Mb SRAM layouts. No PCB changes are required for drop-in replacement, and timing parameters (e.g., tAA = 120 ns) align with common SRAM interface expectations.

What happens to BQ4014YMB-120 outputs during power-down?

When VCC falls below VPFD, the BQ4014YMB-120 places all DQ0–DQ7 outputs into high-impedance state immediately, and treats all inputs as "don't care." If an active memory cycle is in progress, it completes before write-protection engages. This behavior prevents bus contention and data corruption on shared data lines during brownout conditions-ensuring system-level signal integrity without external bus-hold circuitry.

Does BQ4014YMB-120 require external components for backup operation?

No, the BQ4014YMB-120 requires zero external components for nonvolatile operation. Its integrated control circuitry autonomously monitors VCC, manages lithium cell isolation/activation, executes write-protection, and handles supply switchover to backup power. All timing parameters-including tWPT (100 µs typ) and tCER (120 ms max)-are internally generated, eliminating the need for discrete supervisors, diodes, or capacitors typically used in external NVSRAM implementations.