Texas Instruments BQ4014YMB-85

Overview

BQ4014YMB-85 from Texas Instruments is a 256K × 8 nonvolatile static RAM (NVSRAM) with integrated lithium backup, 85 ns access time, -10% supply tolerance, and industry-standard 32-pin DIP module packaging. It functions as a standard SRAM during normal operation and automatically preserves data during power loss via internal battery switchover at 3 V, supporting mission-critical data logging in industrial controllers.

For engineers reviewing the BQ4014YMB-85 datasheet, BQ4014YMB-85 pinout, BQ4014YMB-85 application, or BQ4014YMB-85 equivalent, key selection criteria include VPFD threshold (4.37 V), tCER recovery time (120 ms max), 10-year data retention, and compatibility with conventional 2 Mb SRAM timing and bus protocols.

Technical Context

The BQ4014YMB-85 integrates CMOS SRAM, lithium coin cell, and analog power-fail detection circuitry in a single 32-pin MB module. Its control logic monitors VCC continuously, triggering write-protection when voltage drops below VPFD = 4.37 V (typical) and switching to internal backup at VSO = 3 V.

During power-up, it enforces a 120 ms chip-enable recovery window (tCER) before allowing writes, ensuring processor stabilization. The device requires no external components and maintains full SRAM read/write functionality - including unlimited write cycles - while delivering nonvolatility without EEPROM-style latency or endurance limits.

Key Specifications

Pinout & Package

Package: 32-pin plastic dual-in-line module (MB), 2.100″ × 0.740″ footprint, through-hole mounting compatible with standard DIP sockets.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK15C88-85 and DS1248W-120+, the BQ4014YMB-85 delivers superior long-term data integrity via lithium chemistry, tighter VPFD control for 10% supply systems, and guaranteed 85 ns timing - making it optimal for industrial and safety-critical applications demanding both speed and reliability.

Availability

BQ4014YMB-85 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, telecom base station alarms, and avionics black box event buffering requiring stable component supply and long-lifecycle support.

Supply support for BQ4014YMB-85 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies since 1930.

The BQ4014YMB-85 belongs to TI's Benchmarq nonvolatile memory product line, designed specifically for systems requiring SRAM-speed access with guaranteed data retention during unpredictable power interruptions.

FAQ

What is the power-fail detect voltage (VPFD) for BQ4014YMB-85?

The BQ4014YMB-85 features a VPFD threshold of 4.37 V (typical), with a specified range of 4.30 V to 4.50 V. This lower threshold-compared to the standard BQ4014 (-85) version-is calibrated for systems with ±10% VCC tolerance, enabling earlier and more robust write-protection activation during gradual brownouts. The value is factory-trimmed and does not require external adjustment.

Does BQ4014YMB-85 require external components for nonvolatile operation?

No, the BQ4014YMB-85 requires zero external components for full nonvolatile operation. Its monolithic MB module integrates the 256K × 8 SRAM array, lithium coin cell, analog power-monitoring circuitry, and switchover logic. All timing, voltage detection, and backup activation are handled internally - eliminating the need for hold-up capacitors, diodes, regulators, or discrete supervisors.

How long does BQ4014YMB-85 retain data without power?

The BQ4014YMB-85 guarantees ≥10 years of data retention in the absence of VCC, measured from the first application of power. This is achieved using electrically isolated lithium cells with ≤0.5% annual self-discharge prior to activation. After initial VCC application, the internal switch connects the battery, and retention begins accumulating only during subsequent power-off periods.

Is BQ4014YMB-85 pin-compatible with standard 256K × 8 SRAMs?

Yes, the BQ4014YMB-85 uses the industry-standard 32-pin 256K × 8 pinout (A0–A17, DQ0–DQ7, CE, OE, WE, VCC, VSS, NC), matching JEDEC MS-026 footprints. It operates identically to conventional SRAMs during active power, allowing direct substitution in existing designs without layout or firmware changes - provided the system accommodates its 120 ms tCER recovery window after power-up.

What is the maximum operating temperature range for BQ4014YMB-85?

The BQ4014YMB-85 is rated for commercial operation from 0°C to +70°C, as confirmed in TI's official ordering information and DC operating conditions table. This range covers most industrial control, telecom infrastructure, and medical equipment environments. It is not qualified for extended temperature grades (e.g., -40°C to +85°C), and operation outside 0°C–70°C voids parametric guarantees.