Texas Instruments BQ76200PW

Overview

BQ76200PW from Texas Instruments is a high-voltage, low-power, high-side N-channel MOSFET driver IC for battery pack protection systems. It provides independent CHG and DSG gate drive outputs (up to 14 V above BAT), integrated charge pump (470 nF required), 100-V absolute maximum voltage rating, and PACK+ voltage monitoring via internal switch - enabling robust communication continuity in eBike, UPS, and medical battery packs.

For engineers reviewing the BQ76200PW datasheet, BQ76200PW pinout, BQ76200PW application, or BQ76200PW equivalent, this page delivers verified pin functions, real-world timing specs (e.g., 27–45 µs CHG turn-on), thermal metrics (RθJA = 106.8 °C/W), and design-critical enable logic behavior - all validated against TI's SLUSC16B production data sheet.

Technical Context

The BQ76200PW implements a high-side NMOS protection architecture with an internally OR'ed charge pump control (CP_EN, CHG_EN, DSG_EN), eliminating ground disconnection during FET switching and preserving host-MCU communication regardless of CHG/DSG state. Its PCHG driver supports P-channel precharge FETs for deeply depleted cells, while PMON_EN enables on-demand PACK+ sensing via internal 1.5–3.5 kΩ switch.

Functional modes are strictly defined by digital enable states: NORMAL mode requires CHG_EN/DSG_EN/CP_EN high (40 µA typical current), while SHUTDOWN occurs when all enables are low (<10 µA). All inputs feature internal 0.6–4 MΩ pull-downs, ensuring fail-safe OFF default without external biasing.

Key Specifications

Pinout & Package

TSSOP-16 package (5.00 × 4.40 × 1.00 mm); 16-pin surface-mount with exposed pad for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side N-channel FET driver applications.

Compared with MP6908GJ-Z and TPS28225DR, the BQ76200PW uniquely integrates high-side N-FET drive, precharge control, and PACK+ sensing in one TSSOP-16 package - delivering system-level safety and communication integrity unattainable with generic gate drivers.

Availability

BQ76200PW is available at Aetrix Electronics and suitable for eBikes, energy storage systems, and portable medical devices requiring stable component supply, long-term lifecycle support, and automotive-grade reliability validation.

Supply support for BQ76200PW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies - with over 50 years of innovation in battery management and precision analog ICs.

The BQ76200PW belongs to TI's battery front-end driver product line, designed specifically to enable high-side protection architectures that maintain uninterrupted host communication - targeting e-mobility, grid storage, and mission-critical portable systems.

FAQ

What is the minimum capacitor value required for the VDDCP pin on the BQ76200PW?

The BQ76200PW requires a minimum 470 nF capacitor between VDDCP and BAT pins to ensure reliable charge pump operation. This value is specified in Section 6.3 of the SLUSC16B datasheet and supports up to ~30 nF total FET gate capacitance. Using less than 470 nF risks incomplete charge pump ramp-up, resulting in insufficient gate drive voltage and potential FET damage due to high Rdson operation. The BQ76200PW datasheet explicitly states this as a mandatory design condition.

Does the BQ76200PW support simultaneous CHG and DSG activation?

Yes, the BQ76200PW supports simultaneous CHG and DSG activation when both CHG_EN and DSG_EN are driven high. Table 1 in Section 7.3.2.1 of the SLUSC16B datasheet confirms that CHG and DSG outputs are independently controlled and can be active concurrently. However, doing so places higher load on the charge pump - requiring appropriate VDDCP capacitor scaling (e.g., >470 nF) to maintain VDDCP ≥9 V above BAT. The BQ76200PW does not prevent this configuration but expects system-level validation of timing and thermal margins.

How does the BQ76200PW handle fault conditions when the MCU is powered down?

The BQ76200PW handles MCU power-down faults via internal 0.6–4 MΩ pull-down resistors on all enable inputs (CHG_EN, DSG_EN, PCHG_EN, CP_EN, PMON_EN). When the MCU loses power, these pins float to logic low, forcing CHG, DSG, and PCHG outputs into OFF state and disabling the internal PACK monitor switch. This fail-safe behavior is documented in Sections 7.1 and 7.3.2 of the SLUSC16B datasheet and ensures no unintended FET conduction - a critical safety feature for the BQ76200PW in battery protection systems.

Can the BQ76200PW be used without an external AFE like the bq76940?

Yes, the BQ76200PW can be used without an external AFE. Its digital enable inputs (CHG_EN, DSG_EN, etc.) accept direct GPIO control from any microcontroller, as confirmed in Section 7.1 and Figure 7 of the SLUSC16B datasheet. While it is optimized for use with TI's bq769x0 family (e.g., bq76940), the BQ76200PW functions fully as a standalone gate driver - requiring only logic-level signals and proper VDDCP capacitor placement. No AFE is mandatory for basic CHG/DSG/PCHG control.

What is the absolute maximum voltage rating for the PACK pin on the BQ76200PW?

The PACK pin on the BQ76200PW has an absolute maximum rating of 100 V, as stated in Section 6.1 (Absolute Maximum Ratings) of the SLUSC16B datasheet. This applies under charge pump disabled conditions. Exceeding this voltage may cause permanent device damage. The BQ76200PW is rated for 75 V recommended operating range (VBAT and VPACK), making it suitable for 48-V battery systems with headroom for transient spikes - a key specification validated across TI's production test flow for the BQ76200PW.