Nexperia USA Inc. BSP33,115

Overview

BSP33,115 from Nexperia is a PNP medium power bipolar junction transistor in SOT223 package, rated for −80 V V_CEO, −90 V V_CBO, and −1 A continuous collector current. It delivers DC current gain (h_FE) of 100–300 at −100 mA, −5 V V_CE, and exhibits V_CEsat ≤ −500 mV at −500 mA/−50 mA drive-used in telephony line interface stages and industrial relay drivers.

For engineers reviewing the BSP33,115 datasheet, BSP33,115 pinout, BSP33,115 application, or BSP33,115 equivalent, key selection criteria include verified PNP polarity, SOT223 thermal performance (R_{th j-a} = 93 K/W), low saturation voltage under high-current switching, and documented NPN complement pairing with BSP41/BSP43.

Technical Context

This device operates as a medium-power PNP BJT optimized for linear and switching applications where robust negative-rail control and moderate speed are required. Its structure supports stable DC biasing across −65 °C to +150 °C ambient, with guaranteed h_FE ≥ 50 at −500 mA and V_CE = −5 V.

Thermal design relies on the exposed collector pad (Pins 2 & 4) soldered to ≥1 cm² copper area; R_{th j-s} = 12 K/W enables effective heat transfer to PCB. Switching behavior is characterized by t_on ≤ 500 ns and t_off ≤ 650 ns under specified test conditions (I_Con = −100 mA, I_Boff = 5 mA).

Key Specifications

Pinout & Package

SOT223 plastic surface-mount package with 4 leads; Pins 2 and 4 are internally connected to the collector pad for enhanced thermal conduction and mechanical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium power transistor applications.

Compared with ZTX788 and MJD2955T4G, BSP33,115 offers optimal balance of SOT223 thermal performance, −1 A rating, and 100–300 h_FE-making it preferred for space-constrained industrial controls where reliability at 0.5–1 W dissipation is essential.

Availability

BSP33,115 is available at Aetrix Electronics and suitable for telephony line interfaces, industrial relay drivers, and LED array power switches requiring stable component supply and long-term manufacturability.

Supply support for BSP33,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, and consumer markets with high-volume, high-reliability components.

BSP33,115 belongs to Nexperia's legacy medium-power bipolar transistor product line, engineered for robustness in industrial and telephony applications where proven PNP switching performance and thermal resilience are prioritized.

FAQ

Is BSP33,115 pin-compatible with BSP31 or BSP32?

No-BSP33,115 shares identical SOT223 pinout (Pin 1: Base, Pins 2&4: Collector, Pin 3: Emitter) with BSP31 and BSP32, but differs electrically: BSP33 has −80 V V_CEO and −90 V V_CBO, while BSP31 is rated −60 V/−70 V and BSP32 is −80 V/−90 V. All three use the same footprint and thermal pad layout.

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies 1 cm² single-sided tin-plated copper for the collector pad (Pins 2 & 4) to achieve R_{th j-a} = 93 K/W. Increasing copper area beyond 1 cm² improves thermal resistance marginally; doubling area yields ~15–20% reduction in R_{th j-a}, but diminishing returns apply above 2.5 cm².

Can BSP33,115 replace an NPN transistor in the same circuit?

No-it is a PNP device and cannot directly substitute for an NPN transistor without inverting biasing, supply polarity, and signal logic. Use its documented NPN complements BSP41 or BSP43 for matched pair designs requiring complementary polarity operation.

Does BSP33,115 support pulsed operation above 1 A?

Yes-peak collector current I_CM is rated −2 A with pulse width ≤300 μs and duty cycle ≤1%. This enables short-duration surge handling (e.g., relay coil inrush, LED flash strobes), provided average power remains within P_tot = 1.3 W and junction temperature stays ≤150 °C.