Infineon Technologies BSP50H6327XTSA1

Overview

BSP50H6327XTSA1 from Infineon Technologies is an NPN silicon Darlington transistor optimized for medium-power switching applications, featuring 45 V V_CEO, 1 A continuous collector current, and low 1.3 V V_CE(sat) at I_C = 500 mA / I_B = 0.5 mA. It is housed in a thermally enhanced SOT-223 package and qualified to AEC-Q101 for automotive-grade reliability.

For engineers reviewing the BSP50H6327XTSA1 datasheet, BSP50H6327XTSA1 pinout, BSP50H6327XTSA1 application, or BSP50H6327XTSA1 equivalent, key selection criteria include its Darlington gain (h_FE ≥ 1000), thermal resistance (R_thJS ≤ 17 K/W), saturation voltage performance under pulsed and DC loads, and AEC-Q101 qualification for automotive body electronics.

Technical Context

This Darlington pair integrates two NPN transistors in cascade to deliver high DC current gain while maintaining single-package simplicity. Its structure enables direct drive from low-current logic sources without external base resistors in many cases.

The device operates with a maximum junction temperature of 150 °C and supports peak collector currents up to 2 A for t_p ≤ 10 ms. Its f_T of 200 MHz (typ.) and switching times (t_on = 400 ns, t_off = 1500 ns) confirm suitability for medium-speed switching rather than RF or high-frequency amplification.

Key Specifications

Pinout & Package

Package: SOT-223 (4-pin, standard leadframe variant with exposed thermal pad). Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration for improved thermal and current handling).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington switching applications.

Compared with BCP56-10T1G, BSP50H6327XTSA1 delivers higher gain and automotive qualification at similar cost; compared with BSP52H6327XTSA1, it offers lower saturation voltage and tighter thermal resistance for space-constrained 12 V modules.

Availability

BSP50H6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial relay replacement, LED lighting control, and power supply sequencing requiring stable component supply and AEC-Q101 compliance.

Supply support for BSP50H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The BSP50 series belongs to Infineon's bipolar power transistor product line, designed specifically for robust, high-gain switching in automotive and industrial environments where reliability under thermal stress and electrical transients is critical.

FAQ

What is the maximum safe operating temperature for BSP50H6327XTSA1?

The junction temperature must not exceed 150 °C under any operating condition. The device is rated for storage between –65 °C and +150 °C, and its thermal resistance (R_thJS ≤ 17 K/W) allows operation up to T_S = 124 °C at full 1 A load with appropriate PCB copper area.

Can BSP50H6327XTSA1 replace a standard NPN transistor like BC817 in existing designs?

No - BSP50H6327XTSA1 is a Darlington device with ~1.9 V V_BE(sat) and much higher h_FE; substituting it for a single-stage transistor will cause excessive base current draw and potential logic-level incompatibility unless the drive circuit is redesigned to account for higher V_BE and reduced required I_B.

Is the SOT-223 package of BSP50H6327XTSA1 compatible with automated pick-and-place equipment?

Yes - the SOT-223 footprint complies with JEDEC MO-178 standards, and the device is supplied on 180 mm and 330 mm reels (1,000 and 4,000 pieces per reel respectively), fully compatible with standard surface-mount assembly lines and vision-guided placement systems.

Does BSP50H6327XTSA1 require an external base resistor when driven by a microcontroller GPIO?

It depends on the MCU's output capability and target collector current. For I_C = 500 mA, I_B ≈ 0.5 mA is needed; a 3.3 V GPIO can drive this directly with a 4.7 kΩ series resistor. However, omitting the resistor risks overdriving the base if V_BE(sat) varies - a 1–10 kΩ resistor is strongly recommended for robustness.