Infineon Technologies BSP 51 E6327

Overview

BSP51 E6327 from Infineon Technologies is an NPN silicon Darlington transistor designed for medium-power switching applications, featuring 60 V V_CEO, 1 A continuous collector current, and low 1.3 V V_CE(sat) at I_C = 500 mA / I_B = 0.5 mA. It is housed in a thermally enhanced SOT-223 package and used in automotive lighting control, relay drivers, and industrial solenoid interfaces.

For engineers reviewing the BSP51 E6327 datasheet, BSP51 E6327 pinout, BSP51 E6327 application, or BSP51 E6327 equivalent, key selection criteria include verified DC current gain (h_FE ≥ 1000 at I_C = 150 mA), thermal resistance (R_thJS ≤ 17 K/W), saturation voltage performance under pulsed and DC conditions, and AEC-Q101 qualification status.

Technical Context

The BSP51 E6327 implements a monolithic Darlington pair with integrated base-emitter resistor network optimized for high DC current gain and stable turn-on behavior. Its structure delivers h_FE = 1000–2000 at I_C = 150–500 mA and V_CE = 10 V, enabling direct microcontroller GPIO drive without external base resistors in many cases.

It supports switching operation up to 200 MHz f_T with t_on = 400 ns and t_off = 1500 ns under defined test conditions (I_C = 500 mA, I_B1 = I_B2 = 0.5 mA), and maintains safe operation across −65 °C to +150 °C junction temperature range with R_thJS ≤ 17 K/W.

Key Specifications

Pinout & Package

The BSP51 E6327 is supplied in a surface-mount SOT-223 package with four terminals: three functional pins (B, C, E) and one exposed thermal pad connected internally to the collector (Pin 4). The package provides enhanced power dissipation (P_tot = 1.5 W at T_S ≤ 124 °C) and mechanical robustness for automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington switching applications.

Compared with BCP51 H6327, BSP51 E6327 offers identical performance but distinct traceability and logistics coding; versus BSP61 E6327, it provides complementary polarity rather than functional equivalence-making them paired, not substitutable, devices.

Availability

BSP51 E6327 is available at Aetrix Electronics and suitable for automotive lighting control, industrial relay interfaces, DC motor speed regulation, and heater element switching requiring stable component supply across extended production lifecycles.

Supply support for BSP51 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BSP51 belongs to Infineon's bipolar transistor portfolio engineered specifically for AEC-Q101-compliant automotive and industrial switching applications demanding high gain, low saturation voltage, and robust thermal performance.

FAQ

Is BSP51 E6327 pin-compatible with BSP50 or BSP52?

Yes - all three share identical SOT-223 pinout (Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector thermal pad) and footprint. Differences lie solely in voltage ratings: BSP50 (45 V), BSP51 (60 V), BSP52 (80 V), allowing drop-in substitution where voltage margin permits.

What is the maximum safe operating temperature for continuous use?

The BSP51 E6327 has a maximum junction temperature (T_j) of 150 °C and is rated for continuous operation at 1 A collector current only when case temperature (T_S) remains ≤ 124 °C. Derating is required above that temperature per the P_tot vs. T_S curve in the datasheet.

Does it require an external base resistor?

No - the BSP51 E6327 integrates internal base-emitter resistors, enabling direct connection to 3.3 V or 5 V logic outputs. However, an external series resistor may be added to limit peak base current during fast switching or to fine-tune turn-on speed in noise-sensitive environments.

Can it replace a standard BJT like BC817 in high-gain applications?

Yes - its minimum h_FE of 1000 at 150 mA far exceeds BC817's typical 160–630, making it suitable where higher current gain is needed to reduce base drive burden. However, V_CE(sat) is higher (1.3 V vs. ~0.7 V), so conduction loss must be evaluated in the target application.