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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BSP51H6327XTSA1

Name: BSP51H6327XTSA1
Brand: Infineon Technologies
SKU: BSP51H6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP51H6327XTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BSP51H6327XTSA1.pdf

Description:: TRANS NPN DARL 60V 1A SOT223-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSP51H6327XTSA1 from Infineon Technologies is an NPN silicon Darlington transistor in SOT-223 package, rated for 60 V V_CEO, 1 A continuous collector current, and 1.5 W total power dissipation at T_S ≤ 124 °C. It delivers low V_CE(sat) of 1.3 V (IC = 500 mA, IB = 0.5 mA) and high DC current gain h_FE ≥ 1000, enabling efficient switching in automotive load control circuits.

For engineers reviewing the BSP51H6327XTSA1 datasheet, BSP51H6327XTSA1 pinout, BSP51H6327XTSA1 application, or BSP51H6327XTSA1 equivalent, key selection criteria include verified V_CEO/V_CBO ratings, Darlington saturation voltage under defined drive conditions, thermal resistance R_thJS ≤ 17 K/W, and AEC-Q101 qualification status for automotive use.

Technical Context

This Darlington pair integrates two cascaded NPN transistors to achieve high current gain with single-base control. Its internal structure enables IC = 1 A operation while maintaining low base drive requirements-IB as low as 0.5 mA suffices for 500 mA output under saturation.

The device operates with V_BE(sat) up to 2.2 V at IC = 1 A/IB = 1 mA and exhibits f_T = 200 MHz (IC = 100 mA, V_CE = 5 V), supporting fast switching in relay drivers and lamp ballasts where turn-on time t_on ≤ 400 ns and turn-off time t_off ≤ 1500 ns are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in 12 V/24 V automotive supply rails.
I_C	1 A continuous - Sustained load current capability without derating at T_S ≤ 124 °C; supports solenoid and fan motor drives.
V_CE(sat)	1.3 V @ IC = 500 mA, IB = 0.5 mA - Low conduction loss reduces heat generation in high-duty-cycle switching applications.
h_FE	≥1000 @ IC = 150 mA, V_CE = 10 V - High DC gain minimizes required base drive current, easing MCU GPIO interface design.
R_thJS	≤17 K/W - Thermal resistance from junction to soldering point; enables direct PCB copper pour heatsinking without external heatsink.
f_T	200 MHz - Transition frequency confirms suitability for medium-speed digital switching (e.g., PWM dimming up to ~50 kHz).

Pinout & Package

SOT-223 package with 4-pin configuration: Pin 1 = Base (B), Pin 2 = Collector (C), Pin 3 = Emitter (E), Pin 4 = Collector (C). The dual-collector layout improves thermal conduction and current handling by connecting both collector terminals to the large exposed pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Base	Control input; accepts low-current drive (≤100 mA) to switch up to 1 A load; requires no external base resistor when driven by logic-level sources.
Pin 2	Collector	Main high-current output path; electrically tied to Pin 4; connects to load return or ground-referenced loads.
Pin 3	Emitter	Common emitter node; ties to system ground or low-side switch reference; forms Darlington emitter output stage.
Pin 4	Collector	Secondary collector terminal; paralleled internally with Pin 2 to reduce on-resistance and improve thermal spreading to PCB copper.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature cycling, humidity, and mechanical stress per JESD22 standards-enables use in engine control modules and body electronics.
Pb-free RoHS-compliant	Meets EU Directive 2011/65/EU; eliminates lead in solderability and end-of-life processing without performance trade-offs.
Low V_CE(sat)	1.3 V at 500 mA ensures <1.3 W conduction loss, reducing thermal design burden in space-constrained ECUs.
High h_FE	Minimum 1000 gain allows direct drive from 3.3 V/5 V microcontrollers without base amplification stages.

Applications

Automotive Relay Driver

LED Lamp Ballast Control

Use Scenario: Driving 12 V automotive relays (e.g., HVAC blower, headlight relay) with microcontroller GPIO outputs.

IC Role / Device Role: Low-side switch amplifying weak MCU signals into robust 1 A coil current.

Use Value: Eliminates need for discrete driver stages; V_CE(sat) ≤ 1.3 V keeps relay coil power loss below 0.65 W at 500 mA.

Use Scenario: Controlling high-brightness LED arrays in vehicle interior lighting with PWM dimming.

IC Role / Device Role: Constant-current switch regulating LED string current up to 1 A.

Use Value: High h_FE ≥ 1000 ensures stable current regulation across temperature; f_T = 200 MHz supports clean 1–20 kHz PWM edges.

Industrial Solenoid Actuator

DC Motor Speed Controller

Use Scenario: Switching 24 V industrial solenoids in valve control systems requiring >500 mA holding current.

IC Role / Device Role: High-gain Darlington switch interfacing PLC outputs to inductive loads.

Use Value: Dual-collector (Pins 2 & 4) lowers effective R_DS(on) and improves thermal coupling to PCB, sustaining 1 A at 85 °C ambient.

Use Scenario: Controlling brushed DC motors in automotive seat adjusters or power window modules.

IC Role / Device Role: Low-side PWM switch modulating motor voltage via duty cycle.

Use Value: t_on/t_off ≤ 400/1500 ns enables precise speed resolution at 10–20 kHz switching frequencies without shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCP51TA	V_CEO = 60 V, I_C = 1 A, but h_FE min = 250 (not Darlington); higher V_CE(sat) ≈ 0.7 V @ 500 mA.	Requires higher base drive; unsuitable for ultra-low-drive MCU interfaces.	Select only if lower V_CE(sat) is not required and discrete gain staging is acceptable.
BSP52H6327XTSA1	V_CEO = 80 V, same package/pinout, identical h_FE and V_CE(sat) specs.	Direct upgrade path for designs needing higher voltage margin in 48 V systems.	Drop-in replacement when 80 V rating is required; no layout or drive changes needed.

Compared with BCP51TA, BSP51H6327XTSA1 provides 4× higher DC gain and lower drive loss; versus BSP52H6327XTSA1, it trades 20 V voltage headroom for identical thermal and switching performance in 12/24 V platforms.

Availability

BSP51H6327XTSA1 is available at Aetrix Electronics and suitable for automotive relay drivers, LED lamp ballasts, industrial solenoid actuators, and DC motor speed controllers requiring stable component supply across production lifecycles.

Supply support for BSP51H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The BSP50–BSP52 series targets automotive-grade discrete switching applications, designed specifically to replace electromechanical relays and discrete transistor pairs in AEC-Q101-compliant control modules.

FAQ

What is the maximum junction temperature for BSP51H6327XTSA1?

The absolute maximum junction temperature is 150 °C, as specified in the Infineon datasheet. Operation above this limit risks permanent degradation of the Darlington structure. Derating begins at T_S > 124 °C, where P_tot linearly decreases from 1.5 W to zero at 150 °C junction temperature.

Does BSP51H6327XTSA1 require a base resistor when driven by a 3.3 V MCU GPIO?

Yes-a base resistor is required to limit IB to ≤100 mA and ensure stable Darlington biasing. With h_FE ≥ 1000 and IC = 1 A, minimum IB ≈ 1 mA is needed; a 2.2 kΩ resistor provides ~1.2 mA drive from 3.3 V, staying within safe limits and avoiding saturation delay.

Is BSP51H6327XTSA1 pin-compatible with BSP50 or BSP52?

Yes-BSP50, BSP51, and BSP52 share identical SOT-223 pinout (Pin 1 = B, Pin 2 = C, Pin 3 = E, Pin 4 = C) and footprint. Only V_CEO/V_CBO ratings differ (45 V / 60 V / 80 V), allowing direct substitution where voltage margin permits.

How does the dual-collector (Pins 2 & 4) configuration improve thermal performance?

The dual-collector layout electrically parallels both collector terminals to the large exposed thermal pad, reducing effective thermal resistance from junction to PCB. This achieves R_thJS ≤ 17 K/W-up to 25% lower than single-collector equivalents-enabling higher sustained current in compact layouts without external heatsinks.

BSP51H6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN - Darlington

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.8V @ 1mA, 1A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 2000 @ 500mA, 10V

Power - Max:: 1.5 W

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BSP51H6327XTSA1 FAQ

1.How can I place an order for BSP51H6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP51H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP51H6327XTSA1 reliable?

The price and inventory of BSP51H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP51H6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSP51H6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP51H6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP51H6327XTSA1?

BSP51H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP51H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP51H6327XTSA1?

For technical support, including BSP51H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP51H6327XTSA1 requirements.

6.How does Aetrix verify that BSP51H6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSP51H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP51H6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSP51H6327XTSA1?

All BSP51H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP51H6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP51H6327XTSA1 part is unused and in its original packaging.

Return procedure for BSP51H6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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