Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi BSP52T3

Part No.:
BSP52T3
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP52T3.pdf
Description:
TRANS NPN DARL 80V 1A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,120

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSP52T3 from onsemi is an NPN small-signal Darlington transistor in SOT-223 package, rated for 80 V VCES, 1.0 A IC, and 1.25 W PD (on 1 cm² pad), designed for medium-power switching in relay, solenoid, lamp, and print hammer drivers.

For engineers reviewing the BSP52T3 datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (hFE = 1000–2000 at IC = 150 mA), VCE(sat) ≤ 1.3 V, thermal resistance (RJA = 100 °C/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This Darlington pair integrates two NPN transistors in cascade to deliver high current gain with single-base control, enabling low-drive-current switching of inductive loads. It features a monolithic silicon die structure with integrated emitter ballasting for current sharing and thermal stability.

The device operates with VBE(sat) ≤ 1.9 V at IC = 500 mA / IB = 0.5 mA and exhibits switching times of tr = 155 ns, td = 205 ns, ts = 420 ns, and tf = 365 ns under specified test conditions, supporting reliable medium-speed switching up to ~100 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VCES80 V - Maximum collector-emitter voltage before breakdown under open-base condition; supports 24 V/48 V industrial control rails with margin.
IC1.0 A - Continuous collector current rating; enables direct drive of 500–800 mA solenoids or relays with safety margin.
hFE1000–2000 - High DC current gain at IC = 150 mA; reduces required base drive current to ≤150 µA for 150 mA load.
VCE(sat)≤1.3 V - Low saturation voltage at IC = 500 mA / IB = 0.5 mA; limits conduction loss to <0.65 W at full load.
RJA100 °C/W - Junction-to-ambient thermal resistance on 1 cm² copper pad; enables 1.25 W dissipation with ΔT <125°C rise.
ts + tf785 ns - Combined storage + fall time; defines minimum off-time for PWM operation above ~1 MHz repetition rate.

Pinout & Package

The BSP52T3 is housed in a surface-mount SOT-223 (Case 318E) package with exposed collector tab for thermal and electrical connection. The package supports wave and reflow soldering, with formed leads that absorb thermal stress during assembly.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl input node; accepts low-current drive (e.g., MCU GPIO or logic buffer) to switch high collector current.
2 & 4CollectorPower output node; electrically and thermally connected to exposed metal tab; must be routed to ground plane or heatsink.
3EmitterCurrent return path; connects to load return or system ground; forms common-emitter switching configuration.

Key Features

FeatureDesign Value
High hFE Darlington architectureEnables single-stage switching of 1 A loads with ≤0.5 mA base drive, eliminating need for pre-driver stages.
SOT-223 thermal performance100 °C/W RJA on 1 cm² pad allows 1.25 W continuous dissipation without external heatsink in compact layouts.
AEC-Q101 qualificationValidated for automotive applications including body control modules and power distribution units requiring extended temperature and reliability compliance.
Pb-free, Halogen-free, RoHS-compliantMeets global environmental regulations and supports lead-free reflow profiles up to 260 °C for 10 seconds.

Applications

Relay DriverLamp Driver

Use Scenario: Driving 24 VDC electromagnetic relays in industrial PLC output modules.

IC Role / Device Role / Timing Role: NPN Darlington switch providing galvanic isolation between low-voltage logic and high-current coil circuit.

Use Value: Delivers 1 A peak coil current with <1.3 V saturation drop, minimizing power loss and self-heating during sustained activation.

Use Scenario: Switching incandescent or LED indicator lamps in automotive dashboards and control panels.

IC Role / Device Role / Timing Role: Medium-power load switch interfacing microcontroller GPIOs to 12 V/24 V lamp circuits.

Use Value: High hFE ensures full lamp brightness with minimal base drive current, reducing MCU I/O loading and PCB routing complexity.

Solenoid DriverPrint Hammer Driver

Use Scenario: Actuating pneumatic or hydraulic solenoid valves in factory automation systems.

IC Role / Device Role / Timing Role: High-gain switching element controlling inductive solenoid loads with flyback protection integration.

Use Value: 80 V VCES rating accommodates 48 V supply rails and inductive kickback spikes without clamping diodes in many cases.

Use Scenario: Driving electromechanical print hammers in legacy dot-matrix printers and label printers.

IC Role / Device Role / Timing Role: Fast-switching Darlington transistor delivering pulsed current bursts to hammer coils.

Use Value: 785 ns total turn-off time (ts + tf) supports precise timing control for high-speed character printing at >100 cps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT5401LT1GPNP polarity, lower IC (0.6 A), no Darlington gain (hFE = 60–250); requires higher base drive.Not suitable for same-load switching; used only where complementary PNP topology is needed.Select only if circuit requires PNP configuration and load current ≤600 mA.
ZTX951TO-92 package, higher VCE(sat) (1.5 V), lower PD (0.8 W), non-AEC-Q101; lacks SOT-223 thermal capability.Restricted to low-power, non-automotive applications due to package and qualification limitations.Choose only for cost-sensitive, low-volume consumer designs where thermal performance is secondary.

Compared with MMBT5401LT1G and ZTX951, the BSP52T3 provides uniquely high hFE, AEC-Q101 qualification, and SOT-223 thermal performance-making it the only option among the three capable of driving 1 A inductive loads in automotive or industrial environments with minimal base drive and no heatsink.

Availability

BSP52T3 is available at Aetrix Electronics and suitable for relay driver, solenoid actuation, and lamp control applications requiring stable component supply, automotive-grade reliability, and medium-power surface-mount switching capability.

Supply support for BSP52T3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The BSP52T3 belongs to onsemi's medium-power discrete transistor product line, engineered specifically for robust, high-gain switching in harsh-environment applications such as automotive body electronics and industrial controls.

FAQ

What is the maximum continuous collector current for the BSP52T3?

The BSP52T3 is rated for a maximum continuous collector current (IC) of 1.0 A at TC = 25°C. This rating assumes proper thermal management-specifically, mounting on a 1 cm² copper pad to achieve the 100 °C/W RJA thermal resistance. At higher case temperatures, derating applies at 10 mW/°C above 25°C. The BSP52T3 maintains this current capability while delivering low VCE(sat) and high hFE, making it suitable for demanding load-switching tasks.

Is the BSP52T3 qualified for automotive applications?

Yes, the BSP52T3 is AEC-Q101 qualified and PPAP capable, confirming its suitability for automotive applications including body control modules, power distribution units, and lighting systems. Its construction meets stringent requirements for temperature cycling, humidity, and mechanical shock. The "S" prefix variants (e.g., SBSP52T1G) denote additional site-specific controls for automotive use, but the BSP52T3 itself shares the same die and qualification baseline per onsemi documentation.

What is the pin configuration of the BSP52T3 in the SOT-223 package?

The BSP52T3 uses a standard SOT-223 pinout: Pin 1 is Base, Pins 2 and 4 are Collector (internally tied and connected to the exposed thermal tab), and Pin 3 is Emitter. This configuration enables straightforward PCB layout with the collector tab soldered directly to a large copper pour for thermal and electrical performance. The pinout is identical across BSP52T1G, BSP52T3G, and SBSP52T1G variants.

How does the BSP52T3 compare to its PNP complement BSP62T1?

The BSP62T1 is the designated PNP complement to the BSP52T3, sharing matching voltage ratings (VCEO = 80 V), current capability (IC = 1.0 A), and SOT-223 packaging. Both devices exhibit comparable hFE ranges and thermal characteristics, enabling symmetrical high-side/low-side switching designs. However, the BSP52T3 is optimized for low-side switching (emitter-grounded), while the BSP62T1 serves high-side configurations (emitter-connected to supply rail).

What is the typical DC current gain (hFE) of the BSP52T3 at operating conditions?

The BSP52T3 delivers a typical DC current gain (hFE) of 1000–2000 at IC = 150 mA and VCE = 10 V, per the official onsemi datasheet. This high gain enables efficient switching with minimal base drive-e.g., only ~150 µA base current required to fully saturate the device at 150 mA collector load. Gain remains usable up to 500 mA, though it decreases gradually with increasing current, as shown in Figure 1 of the BSP52T1/D datasheet.

BSP52T3 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max):
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 500mA, 10V
Power - Max:
800 mW
Frequency - Transition:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223 (TO-261)

BSP52T3 FAQ

1.How can I place an order for BSP52T3 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP52T3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP52T3 reliable?

The price and inventory of BSP52T3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP52T3 is usually 5 days.

3.What payment methods are accepted for BSP52T3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP52T3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP52T3?

BSP52T3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP52T3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP52T3?

For technical support, including BSP52T3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP52T3 requirements.

6.How does Aetrix verify that BSP52T3 is sourced from the original manufacturer or authorized distributors?

All BSP52T3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP52T3 meets industry standards.

7.What is the process for return or replacement of BSP52T3?

All BSP52T3 units undergo pre-shipment inspection (PSI). If there is an issue with BSP52T3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP52T3 part is unused and in its original packaging.

Return procedure for BSP52T3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSP52T3 Tags

  • BSP52T3
  • BSP52T3 PDF
  • BSP52T3 Datasheet
  • BSP52T3 Specifications
  • BSP52T3 Images
  • onsemi
  • onsemi BSP52T3
  • Buy BSP52T3
  • BSP52T3 Price
  • BSP52T3 Distributor
  • BSP52T3 Supplier
  • BSP52T3 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER