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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BSR33,115

Name: BSR33,115
Brand: Nexperia USA Inc.
SKU: BSR33,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSR33,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: BSR33,115.pdf

Description:: TRANS PNP 80V 1A SOT-89

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSR33,115 from Nexperia is a PNP medium-power bipolar junction transistor in SOT89 package, rated for −80 V V_CEO, −1 A continuous collector current, and 1.35 W power dissipation at T_amb ≤ 25 °C. It serves as a high-side switch or linear regulator pass element in automotive and industrial power control circuits, with AEC-Q101 qualification and exposed heatsink for thermal management.

For engineers reviewing the BSR33,115 datasheet, BSR33,115 pinout, BSR33,115 application, or BSR33,115 equivalent, key selection criteria include verified PNP polarity, SOT89 thermal performance (R_th(j-sp) = 13 K/W), DC current gain (h_FE = 100–300 @ −100 mA), saturation voltage (V_CE(sat) ≤ −0.5 V @ −500 mA/−50 mA), and automotive-grade reliability.

Technical Context

This discrete PNP transistor operates in linear and switching modes with defined absolute maximum ratings: −90 V V_CBO, −5 V V_EBO, and 150 °C T_j. Its pulsed operation supports peak collector current up to −2 A (t_p ≤ 1 ms) and base current up to −200 mA.

Thermal design relies on the exposed collector pad-R_th(j-a) = 93 K/W (free air, FR4 PCB), R_th(j-sp) = 13 K/W-enabling stable operation in compact, thermally constrained layouts. Transition frequency f_T = 100 MHz confirms suitability for moderate-speed switching and amplifier stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−80 V: Maximum safe collector-emitter voltage with open base; defines high-side switch blocking capability in 24 V automotive systems.
I_C	−1 A continuous: Sustained load current handling; enables direct drive of small solenoids or LED strings without external buffering.
h_FE	100–300 @ −100 mA: Predictable DC current amplification; simplifies base drive design for linear regulators and analog amplifiers.
V_CE(sat)	≤ −0.5 V @ −500 mA/−50 mA: Low conduction loss in saturated switching; reduces heat generation in battery-powered high-side switches.
P_tot	1.35 W @ T_amb ≤ 25 °C: Power handling on standard FR4 PCB; requires ≥6 cm² copper pour under collector pad for full rating.
f_T	100 MHz @ −10 V/−50 mA: Bandwidth sufficient for audio preamps and PWM gate drivers up to ~10 MHz fundamental.

Pinout & Package

SOT89 plastic surface-mount package with 3 leads, 1.5 mm pitch, 4.5 mm × 2.5 mm × 1.5 mm body, and exposed collector pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit path; connected to load return or ground reference in high-side configurations.
2	Collector	Main current input; electrically and thermally tied to PCB copper pour via exposed pad for heat sinking.
3	Base	Control terminal; requires current-limited drive (e.g., resistor from microcontroller GPIO) to achieve specified h_FE and V_CE(sat).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications per stress-test requirements; supports deployment in engine control, lighting, and body electronics without additional qualification.
Exposed collector pad	Enables low R_th(j-sp) = 13 K/W; allows >70% of total power dissipation to be conducted directly into PCB copper, reducing junction temperature rise.
High power dissipation	1.35 W rating on standard FR4 board; eliminates need for discrete heatsinks in space-constrained 12–24 V power stages.
High current capability	−1 A continuous / −2 A pulsed; supports direct driving of relays, fans, and MOSFET gates without Darlington staging.

Applications

Linear Voltage Regulators

High-Side Switches

Use Scenario: Adjustable 5–12 V output regulation using op-amp error amplifier and external pass element.

IC Role / Device Role / Timing Role: PNP pass transistor controlling output voltage by modulating emitter-collector current based on feedback loop.

Use Value: Low V_CE(sat) minimizes dropout voltage; h_FE stability ensures predictable loop gain across temperature.

Use Scenario: Controlling +12 V supply to infotainment subsystems or sensors in automotive ECUs.

IC Role / Device Role / Timing Role: High-side power switch enabling load enable/disable with reverse-polarity protection.

Use Value: −80 V V_CEO withstands load-dump transients; exposed pad maintains T_j < 125 °C at 800 mA continuous.

Battery-Driven Devices

MOSFET Drivers

Use Scenario: Power path control in portable medical monitors or handheld test equipment with Li-ion battery input.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected main power switch upstream of DC-DC converters.

Use Value: −5 V V_EBO rating prevents damage during battery insertion errors; AEC-Q101 ensures field reliability.

Use Scenario: Level-shifting and current boosting stage for N-channel MOSFET gate drive in half-bridge motor controllers.

IC Role / Device Role / Timing Role: PNP current source/sink providing fast turn-on/turn-off gate current to reduce switching losses.

Use Value: 100 MHz f_T supports clean 100 ns edge transitions; −2 A I_CM handles gate charge surges during hard switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BSR43,115	NPN complement; same SOT89 package, −80 V V_CEO, 1 A I_C, but opposite polarity and lower h_FE min (60 vs. 100).	Requires inverted control logic and different biasing; suitable only where NPN topology is preferred (e.g., low-side switching).	Select only when circuit topology mandates NPN configuration; not a drop-in replacement.
ZTX788B	TO-92 package; −80 V V_CEO, 1 A I_C, but higher V_CE(sat) (−0.7 V @ −500 mA) and no AEC-Q101 qualification.	Lacks exposed thermal pad; R_th(j-a) ≈ 200 K/W limits power handling in SMT layouts.	Acceptable for non-automotive prototypes or cost-sensitive consumer designs where thermal margin is available.

Compared with BSR33,115, BSR43,115 offers complementary NPN functionality but requires redesign of biasing and layout, while ZTX788B sacrifices thermal performance and automotive qualification for through-hole compatibility and lower unit cost.

Availability

BSR33,115 is available at Aetrix Electronics and suitable for linear voltage regulators, high-side switches, and battery-driven devices requiring stable component supply, automotive-grade reliability, and SMT-compatible thermal management.

Supply support for BSR33,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

The BSR33,115 belongs to Nexperia's AEC-Q101-qualified discrete transistor portfolio, engineered for robust power control in harsh environments-especially high-side switching and linear regulation where thermal efficiency and transient resilience are critical.

FAQ

What is the maximum allowable junction temperature for BSR33,115?

The absolute maximum junction temperature is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent degradation. Derating is required above 25 °C ambient-e.g., at 70 °C ambient, maximum usable power drops to ~0.8 W on standard FR4 with 6 cm² copper.

Can BSR33,115 replace a BSR32 in an existing design?

No-BSR32 has −60 V V_CEO and −0.5 A I_C, while BSR33,115 is rated for −80 V and −1 A. Substituting it may improve voltage margin but requires verification of base drive strength, thermal layout, and h_FE impact on loop stability in linear applications.

Is the SOT89 footprint for BSR33,115 compatible with reflow soldering?

Yes-the official Nexperia reflow footprint (sot089_fr) specifies 1.2 mm × 1.9 mm solder lands with 0.7 mm spacing, optimized for lead-free reflow profiles. The exposed collector pad must be fully soldered to ensure thermal performance and mechanical reliability.

Does BSR33,115 support pulse-width modulation (PWM) switching?

Yes-it supports pulsed operation up to −2 A with t_p ≤ 1 ms and duty cycle δ ≤ 0.01. For sustained PWM, average power must stay within 1.35 W derated for ambient temperature, and V_CE(sat) must be measured under actual switching conditions due to minority-carrier storage effects.

BSR33,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 1.35 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

BSR33,115 FAQ

1.How can I place an order for BSR33,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSR33,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSR33,115 reliable?

The price and inventory of BSR33,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSR33,115 is usually 5 days.

3.What payment methods are accepted for BSR33,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSR33,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSR33,115?

BSR33,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSR33,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSR33,115?

For technical support, including BSR33,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSR33,115 requirements.

6.How does Aetrix verify that BSR33,115 is sourced from the original manufacturer or authorized distributors?

All BSR33,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSR33,115 meets industry standards.

7.What is the process for return or replacement of BSR33,115?

All BSR33,115 units undergo pre-shipment inspection (PSI). If there is an issue with BSR33,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSR33,115 part is unused and in its original packaging.

Return procedure for BSR33,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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