Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BSR41F

Part No.:
BSR41F
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
AetrixBSR41F.pdf
Description:
TRANS NPN 60V 1A SOT-89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,892

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSR41F from Nexperia is an NPN medium-power bipolar junction transistor in SOT89 package, rated for 60 V VCEO, 1 A continuous collector current, and 2 A peak pulse current. It delivers DC current gain (hFE) of 50–300 at IC = 100 mA–500 mA, with VCE(sat) ≤ 500 mV at IC = 500 mA / IB = 50 mA. It serves as a low-side switch or linear regulator pass element in battery-powered industrial control modules.

For engineers reviewing the BSR41F datasheet, BSR41F pinout, BSR41F application, or BSR41F equivalent, key selection criteria include its 1.35 W power dissipation at Tamb ≤ 25 °C, 93 K/W junction-to-ambient thermal resistance, and verified suitability for MOSFET gate driving and linear voltage regulation where moderate speed and robust DC gain are required.

Technical Context

The BSR41F operates as a standard NPN switching and amplification device with fixed three-terminal topology (Emitter, Collector, Base). Its design supports DC-coupled linear operation up to 500 mA and pulsed switching with ton ≤ 250 ns and toff ≤ 1 µs under defined test conditions (ICon/ICoff = ±5 mA).

Thermal performance is defined for mounting on FR4 PCB with 6 cm² collector pad, yielding Rth(j-sp) = 13 K/W to solder point. Electrical characteristics are specified across –65 °C to 150 °C ambient and junction temperature ranges, with absolute maximum ratings including VCBO = 70 V and VEBO = 5 V.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 60 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in low-side switch or LDO pass transistor use.
IC (continuous) 1 A - Continuous collector current rating; sets max DC load drive capability without derating at Tamb ≤ 25 °C.
hFE 50–300 - DC current gain range at VCE = 5 V, IC = 100–500 mA; enables predictable base drive sizing for saturation.
VCE(sat) ≤ 500 mV at IC = 500 mA / IB = 50 mA - Low saturation voltage minimizes conduction loss in switching applications.
Rth(j-a) 93 K/W - Junction-to-ambient thermal resistance in free air; determines temperature rise per watt dissipated without heatsink.
fT 100 MHz - Transition frequency at VCE = 10 V, IC = 50 mA; indicates usable bandwidth for small-signal amplification.

Pinout & Package

SOT89 (SC-62) plastic surface-mounted package with exposed die pad for thermal conduction; 3-lead, 1.5 mm pitch, 4.5 mm × 2.5 mm × 1.5 mm body; collector connected to tab for direct PCB thermal path.

Pin/Terminal Circuit Role Design Meaning
1 Emitter Current exit node; referenced to ground in low-side switch configuration; requires low-impedance return path for stable biasing.
2 Collector Current entry node; electrically and thermally tied to exposed pad; must be routed to high-current trace or thermal plane.
3 Base Control input; driven with current-limited source to achieve target IC/IB ratio; sensitive to ESD due to thin oxide layer.

Key Features

Feature Design Value
High current handling 1 A continuous collector current supports direct drive of solenoids, relays, and LED strings without external buffering.
Low saturation voltage VCE(sat) ≤ 500 mV at full-rated IC reduces power loss and self-heating in linear and switching modes.
Robust thermal design Exposed collector pad and 13 K/W junction-to-solder-point resistance enable reliable operation on standard FR4 with minimal copper area.
Wide operating temperature Specified from –65 °C to +150 °C junction temperature allows deployment in industrial enclosures and automotive under-hood proximity (non-automotive qualified).

Applications

Linear Voltage Regulators Low-Side Switches

Use Scenario: Adjustable positive LDO using external resistive divider and BSR41F as series pass transistor.

IC Role / Device Role / Timing Role: Pass element controlling output voltage via base-emitter bias; dissipates excess input-output differential as heat.

Use Value: Enables compact, low-cost linear regulation up to 1 A load with <1 V dropout at full current due to low VCE(sat).

Use Scenario: Controlling 12 V DC loads (e.g., fans, indicators) from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: NPN switch sinking current to ground; base driven by logic-level signal through current-limiting resistor.

Use Value: Provides reliable turn-on/turn-off with toff ≤ 1 µs and guaranteed hFE ≥ 50 ensures sufficient gain margin for GPIO-compatible drive.

Battery-Driven Devices MOSFET Drivers

Use Scenario: Power path control in portable medical monitors or handheld test equipment with Li-ion battery input.

IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry during sleep mode; emitter grounded, collector feeds regulated rail.

Use Value: Low ICBO ≤ 100 nA and VEBO = 5 V support ultra-low standby leakage and compatibility with 3.3 V/5 V logic interfaces.

Use Scenario: Driving N-channel power MOSFET gates in DC-DC converter half-bridge stages.

IC Role / Device Role / Timing Role: Active pull-down stage accelerating MOSFET turn-off; paired with PNP or resistor pull-up for totem-pole output.

Use Value: Fast toff ≤ 1 µs and 2 A ICM allow rapid gate discharge even under high capacitive load, reducing shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BSR31 PNP complement with identical VCEO = 60 V, IC = 1 A, but opposite polarity and inverted pinout (E/C/B → B/C/E). Used in high-side switch or complementary push-pull amplifier configurations where sourcing current is required. Select BSR31 only when circuit topology demands PNP behavior; not a drop-in replacement for BSR41F.
ZTX653 Higher VCEO = 100 V, higher hFE = 100–600, but larger SOT223 package and lower Ptot = 1 W on FR4. Better suited for higher-voltage industrial supplies (>60 V) but requires larger board area and exhibits higher thermal resistance. Choose ZTX653 only if VCEO > 60 V is mandatory; otherwise BSR41F offers superior thermal performance in space-constrained designs.

Compared with BSR31 and ZTX653, the BSR41F provides optimal balance of voltage rating, current capacity, thermal efficiency, and footprint size for low-to-medium voltage switching and linear regulation-making it preferred where SOT89's compactness and 1.35 W dissipation are critical.

Availability

BSR41F is available at Aetrix Electronics and suitable for linear voltage regulators, low-side switches, and battery-driven devices requiring stable component supply and consistent parametric performance across production lots.

Supply support for BSR41F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, spun off from Philips and headquartered in Nijmegen, Netherlands.

The BSR41F belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive industrial and consumer applications demanding proven robustness, tight parameter distribution, and long-term manufacturability.

FAQ

What is the maximum allowable junction temperature for continuous operation of the BSR41F?

The BSR41F has a maximum junction temperature (Tj) rating of 150 °C, as defined in its Absolute Maximum Ratings table. Operation above this temperature risks permanent degradation of silicon structure and electrical parameters. Derating is required above Tamb = 25 °C per the Rth(j-a) = 93 K/W curve, and thermal design must ensure Tj remains below 150 °C under worst-case load and ambient conditions.

Can the BSR41F be used in automotive applications?

No-the BSR41F is explicitly designated as non-automotive qualified in its revision history and legal disclaimers. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond commercial specifications. For automotive use, Nexperia offers Q-qualified variants (e.g., BSR41-Q), which undergo additional stress testing and process controls.

How does the exposed collector pad on the SOT89 package affect PCB layout?

The exposed collector pad on the BSR41F's SOT89 package must be soldered directly to a dedicated copper pour or thermal pad on the PCB to achieve the specified Rth(j-sp) = 13 K/W. Layout requires ≥6 cm² of single-sided copper, tin-plated, connected to the collector net. Thermal vias beneath the pad are recommended to improve heat transfer to inner layers or backside planes.

Is the BSR41F pin-compatible with other SOT89 transistors like MMBT4401?

No-while both use SOT89 packages, the BSR41F has E-C-B pinout (1–2–3), whereas MMBT4401 uses C-B-E (1–2–3). Swapping them without verifying pin mapping will cause immediate circuit failure. Always cross-check pinning diagrams: BSR41F Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base per Table 2 of the datasheet.

BSR41F Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Power - Max:
1.35 W
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89

BSR41F FAQ

1.How can I place an order for BSR41F through Aetrix?

Please submit a Request for Quotation (RFQ) for BSR41F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSR41F reliable?

The price and inventory of BSR41F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSR41F is usually 5 days.

3.What payment methods are accepted for BSR41F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSR41F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSR41F?

BSR41F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSR41F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSR41F?

For technical support, including BSR41F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSR41F requirements.

6.How does Aetrix verify that BSR41F is sourced from the original manufacturer or authorized distributors?

All BSR41F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSR41F meets industry standards.

7.What is the process for return or replacement of BSR41F?

All BSR41F units undergo pre-shipment inspection (PSI). If there is an issue with BSR41F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSR41F part is unused and in its original packaging.

Return procedure for BSR41F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSR41F Tags

  • BSR41F
  • BSR41F PDF
  • BSR41F Datasheet
  • BSR41F Specifications
  • BSR41F Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BSR41F
  • Buy BSR41F
  • BSR41F Price
  • BSR41F Distributor
  • BSR41F Supplier
  • BSR41F Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER