Nexperia USA Inc. BSR43,115
- Part No.:
- BSR43,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
BSR43,115.pdf
- Description:
- TRANS NPN 80V 1A SOT-89
- Quantity:
- Payment:

- Shipping:

Inventory:1,480
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Product details
Overview
BSR43,115 from Nexperia is an NPN medium-power bipolar junction transistor in SOT89 package, rated for 80 V VCEO, 1 A continuous collector current, and 1.35 W power dissipation at 25 °C ambient. It serves as a linear regulator pass element, low-side switch, or MOSFET driver in battery-powered industrial and consumer systems.
For engineers reviewing the BSR43,115 datasheet, BSR43,115 pinout, BSR43,115 application, or BSR43,115 equivalent, this page delivers verified electrical parameters, thermal resistance (Rth(j-a) = 93 K/W), DC current gain (hFE = 100–300 at IC = 100 mA), saturation voltages, and switching times - all critical for discrete power stage design and thermal margining.
Technical Context
The BSR43,115 operates as a silicon NPN transistor with base-controlled current amplification, optimized for medium-power linear and switching applications. Its 80 V VCEO rating supports operation in 48 V and 36 V bus systems, while its 2 A peak collector current (ICM) enables short-duration surge handling in power management circuits.
Thermal performance is defined by Rth(j-sp) = 13 K/W to solder point and Rth(j-a) = 93 K/W on FR4 PCB, confirming suitability for thermally constrained SMT layouts. The device exhibits fT = 100 MHz and switching times of ton = 250 ns / toff = 1 µs under standard test conditions, supporting moderate-speed switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in linear regulators and switches. |
| IC | 1 A continuous - Rated DC collector current; sets maximum steady-state load drive capability. |
| hFE | 100–300 at IC = 100 mA - DC current gain range; determines required base drive for target collector current. |
| VCE(sat) | ≤ 500 mV at IC = 500 mA, IB = 50 mA - Low saturation voltage minimizes conduction loss in switching applications. |
| Rth(j-a) | 93 K/W - Junction-to-ambient thermal resistance on FR4 PCB; used to calculate temperature rise under power dissipation. |
| fT | 100 MHz - Transition frequency; indicates usable bandwidth for small-signal amplification or high-speed switching. |
| toff | 1 µs - Turn-off time at IC = 100 mA; constrains maximum switching frequency in PWM-driven stages. |
Pinout & Package
SOT89 (SC-62) plastic surface-mounted package: 3-lead, 1.5 mm pitch, 4.5 mm × 2.5 mm × 1.5 mm body; collector tab forms thermal pad and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current exit node; connected to ground or low-side reference in common-emitter configurations. |
| 2 | Collector | Main current input node; electrically and thermally tied to large copper pad for heat dissipation. |
| 3 | Base | Control terminal; requires current-limited drive (e.g., via series resistor) to achieve desired IC. |
Key Features
| Feature | Design Value |
|---|---|
| High current capability | 1 A continuous IC supports robust load switching without external heatsinking in compact designs. |
| Low VCE(sat) | ≤ 500 mV at IC = 500 mA reduces conduction losses and self-heating in linear and saturated operation. |
| Thermally enhanced package | SOT89 collector tab enables direct thermal coupling to PCB copper, achieving Rth(j-sp) = 13 K/W. |
| Stable hFE over temperature | hFE maintains 50–300 range across −55 °C to +100 °C, enabling predictable biasing in wide-temperature environments. |
| Fast switching | 250 ns turn-on and 1 µs turn-off support PWM frequencies up to ~100 kHz in non-critical timing applications. |
Applications
| Linear Voltage Regulators | Low-Side Switches |
|---|---|
|
Use Scenario: Adjustable 3.3 V/5 V/12 V linear regulators supplying microcontrollers or sensors from 24 V or 48 V input rails. IC Role / Device Role / Timing Role: Pass transistor controlling output voltage via emitter-follower or series-regulator topology. Use Value: 80 V VCEO provides sufficient headroom for transient surges; 1.35 W Ptot allows >500 mA output at 10 V dropout without forced cooling. |
Use Scenario: Enabling/disabling power to peripheral modules (e.g., displays, sensors, actuators) in portable medical or industrial handheld devices. IC Role / Device Role / Timing Role: Ground-referenced switch sinking load current when base is driven high. Use Value: 1 A IC rating supports typical module loads; low VCE(sat) limits voltage drop and power loss during active state. |
| Battery-Driven Devices | MOSFET Drivers |
|
Use Scenario: Power path control and load switching in rechargeable Li-ion or multi-cell alkaline systems (e.g., power tools, portable analyzers). IC Role / Device Role / Timing Role: Discrete switch managing battery discharge paths, enable signals, or protection circuitry. Use Value: −65 °C to +150 °C operating range ensures reliability across storage and field use; low ICEO (<100 nA) preserves battery life in standby. |
Use Scenario: Level-shifting and gate drive for N-channel power MOSFETs in DC-DC converters or motor drivers. IC Role / Device Role / Timing Role: Active pull-down stage accelerating MOSFET turn-off by discharging gate capacitance. Use Value: 1 µs toff and 100 MHz fT enable effective gate discharge; 2 A ICM handles brief gate charge currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN medium-power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSR33,115 | PNP complement with identical VCEO (80 V), IC (1 A), and SOT89 package; hFE min 50 at IC = 500 mA. | Used in high-side switching or complementary push-pull stages where sourcing current is required. | Select BSR33,115 only when PNP polarity is needed; not a drop-in replacement for BSR43,115 in NPN configurations. |
| BCX56-16,115 | Same SOT89 package but higher hFE (160–400), lower VCEO (60 V), and reduced Ptot (1.25 W); Rth(j-a) = 100 K/W. | Better suited for low-voltage, high-gain amplification or low-dropout linear regulation below 48 V. | Choose BCX56-16,115 only if system voltage ≤60 V and higher DC gain is prioritized over thermal margin. |
Compared with BSR33,115 and BCX56-16,115, the BSR43,115 uniquely balances 80 V breakdown, 1 A current, and 93 K/W thermal resistance - making it optimal for 48 V industrial linear regulators and battery-switching applications where voltage headroom and thermal efficiency are jointly critical.
Availability
BSR43,115 is available at Aetrix Electronics and suitable for linear voltage regulators, low-side switches, battery-driven devices, and MOSFET drivers requiring stable component supply across industrial, instrumentation, and portable electronics programs.
Supply support for BSR43,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.
The BSR43,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-effective, thermally robust medium-power switching and linear regulation in space-constrained SMT applications.
FAQ
What is the maximum allowable junction temperature for BSR43,115?
The absolute maximum junction temperature (Tj) is 150 °C per IEC 60134 limiting values. Operation above this threshold risks permanent degradation. Derating is required above 25 °C ambient using Rth(j-a) = 93 K/W; for example, at 70 °C ambient, max allowable Ptot drops to ~0.86 W.
Can BSR43,115 be used in avalanche mode?
No - the BSR43,115 is not rated or characterized for avalanche operation. Its VCEO = 80 V and VCBO = 90 V are absolute maximum ratings; exceeding VCEO with inductive loads may cause destructive breakdown unless externally clamped.
Is the SOT89 package lead-free and RoHS-compliant?
Yes - the BSR43,115 is manufactured in a lead-free, RoHS-compliant SOT89 package per Nexperia's product compliance documentation. The marking "AR4" on the device body confirms this variant, and reflow profiles follow JEDEC J-STD-020 standards for MSL3.
How does base-emitter saturation voltage vary with temperature?
VBE(sat) decreases by approximately −2.2 mV/°C across −55 °C to +100 °C, as shown in Figure 6 of the datasheet. At IC = 500 mA and IB = 50 mA, VBE(sat) ranges from ~1.2 V at −55 °C to ~0.9 V at +100 °C - critical for accurate base drive resistor selection in wide-temperature designs.
BSR43,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 100mA, 5V
- Power - Max:
- 1.35 W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89
BSR43,115 FAQ
1.How can I place an order for BSR43,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSR43,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSR43,115 reliable?
The price and inventory of BSR43,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSR43,115 is usually 5 days.
3.What payment methods are accepted for BSR43,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSR43,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSR43,115?
BSR43,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSR43,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSR43,115?
For technical support, including BSR43,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSR43,115 requirements.
6.How does Aetrix verify that BSR43,115 is sourced from the original manufacturer or authorized distributors?
All BSR43,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSR43,115 meets industry standards.
7.What is the process for return or replacement of BSR43,115?
All BSR43,115 units undergo pre-shipment inspection (PSI). If there is an issue with BSR43,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSR43,115 part is unused and in its original packaging.
Return procedure for BSR43,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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