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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BSS63,215

Name: BSS63,215
Brand: Nexperia USA Inc.
SKU: BSS63,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS63,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS63,215.pdf

Description:: TRANS PNP 100V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,361

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Product details

Overview

BSS63 from Nexperia is a PNP high-voltage bipolar junction transistor (BJT) designed for switching and high-voltage general-purpose applications. It delivers V_CEO = −100 V, I_C = −100 mA maximum, h_FE ≥ 30 at −10 mA/−1 V, and operates across −65 °C to +150 °C ambient. It is used in off-board power control circuits requiring robust voltage blocking and low-power drive.

For engineers reviewing the BSS63 datasheet, BSS63 pinout, BSS63 application, or BSS63 equivalent, this page provides verified package mapping (SOT23), confirmed terminal roles (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), thermal resistance (R_th(j-a) = 500 K/W), saturation voltages (V_CEsat ≤ −250 mV, V_BEsat ≤ −900 mV), and validated alternatives for high-voltage PNP switching.

Technical Context

This discrete PNP transistor operates in active and saturation regions with fixed current gain characteristics dependent on collector current and temperature. Its −100 V V_CEO rating enables use in circuits where emitter-referenced loads require reverse-polarity high-voltage isolation.

The device exhibits low base-emitter and collector-emitter saturation voltages under defined drive conditions (I_C/I_B = 10), supporting efficient low-power switching. Its f_T of 50–85 MHz confirms suitability for moderate-speed digital switching, not RF amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Maximum collector-emitter voltage with open base; defines safe operating range for high-side switch configurations.
I_C	−100 mA - Continuous collector current limit; sets maximum load current capability in linear or saturated operation.
h_FE	≥30 at −10 mA/−1 V - Minimum DC current gain ensures reliable base drive sizing for predictable switching thresholds.
V_CEsat	≤ −250 mV at −25 mA/−2.5 mA - Low saturation voltage minimizes conduction loss and self-heating in on-state switching.
R_th(j-a)	500 K/W - Junction-to-ambient thermal resistance on FR4 PCB; determines temperature rise under 250 mW dissipation.
f_T	50–85 MHz - Transition frequency confirms usable bandwidth for digital logic-level switching up to ~10 MHz.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, single-sided copper FR4 mounting.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires external resistor-limited drive to achieve target I_C and ensure saturation.
2	Emitter	Common reference terminal for PNP configuration; typically connected to higher potential (e.g., V_CC) in high-side switches.
3	Collector	Output current path; sinks load current when transistor is on; must remain ≤ −100 V relative to emitter.

Key Features

Feature	Design Value
High-voltage blocking	−100 V V_CEO enables direct interface with 48 V and 60 V industrial bus lines without level-shifting.
Low saturation loss	V_CEsat ≤ −250 mV at I_C = −25 mA reduces power dissipation and improves efficiency in pulsed switching.
Wide temperature operation	−65 °C to +150 °C ambient range supports deployment in automotive under-hood and industrial control enclosures.
Standard SOT23 footprint	Compatible with automated pick-and-place and reflow processes using industry-standard land patterns (e.g., sot023_fr).

Applications

Industrial Power Sequencing

High-Voltage Sensor Biasing

Use Scenario: Controlling power-up sequence of isolated analog front-ends in PLC modules using 24–48 V rails.

IC Role / Device Role / Timing Role: PNP high-side switch enabling controlled voltage ramp to downstream LDOs and op-amps.

Use Value: −100 V V_CEO withstands transient overvoltage during hot-swap events; low V_CEsat limits thermal stress during extended bias periods.

Use Scenario: Providing stable reverse-bias voltage to avalanche photodiodes in optical smoke detectors.

IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor to deliver precise −70 V bias.

Use Value: h_FE ≥ 30 ensures stable current regulation across temperature; −110 V V_CBO prevents breakdown under sensor leakage conditions.

LED String Switching

Relay Driver Interface

Use Scenario: Driving series-connected white LEDs from a 36 V supply in emergency lighting systems.

IC Role / Device Role / Timing Role: Low-duty-cycle switch controlling LED current path via microcontroller GPIO.

Use Value: 50–85 MHz f_T supports PWM dimming up to 5 kHz without phase lag; SOT23 footprint saves board space in compact fixtures.

Use Scenario: Isolating MCU outputs from 24 V DC relay coils in HVAC control panels.

IC Role / Device Role / Timing Role: High-voltage interface transistor absorbing coil flyback energy through built-in V_CEO margin.

Use Value: −100 V rating exceeds typical 24 V relay coil flyback spikes (≤ −60 V); 250 mW P_tot accommodates brief inductive turn-off surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC807-40,215	V_CEO = −45 V, h_FE = 250–630, P_tot = 300 mW	Limited to ≤ 36 V systems; higher gain reduces base drive burden but lower voltage rating restricts use in 48 V+ designs.	Select when higher current gain and lower drive current are prioritized over voltage headroom.
MMBT4403	V_CEO = −40 V, h_FE = 100–300, R_th(j-a) = 400 K/W	Not suitable for >36 V operation; slightly better thermal performance but insufficient voltage margin for industrial 48 V rails.	Choose only for cost-sensitive 24 V applications where full −100 V capability is unnecessary.

Compared with BC807-40,215 and MMBT4403, BSS63 uniquely supports 48–60 V system interfaces while maintaining SOT23 compatibility-making it the only option among the three qualified for high-voltage industrial switching without derating or redesign.

Availability

BSS63 is available at Aetrix Electronics and suitable for industrial power sequencing, high-voltage sensor biasing, LED string switching, and relay driver interface applications requiring stable component supply and long-term obsolescence management.

Supply support for BSS63 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with manufacturing rooted in process technology and automotive-grade quality systems.

BSS63 belongs to Nexperia's high-voltage bipolar transistor product line, engineered specifically for robust switching in industrial power management, sensor excitation, and interface protection circuits.

FAQ

Is BSS63 suitable for automotive applications?

No. The BSS63 is explicitly designated as non-automotive qualified per Nexperia's 2023 revision history. It lacks AEC-Q101 qualification, automotive temperature validation beyond specification limits, and automotive-specific reliability testing. For automotive use, Nexperia offers Q-qualified variants such as BSS63,215Q, which undergo extended temperature cycling and failure analysis per AEC standards.

What is the maximum safe continuous power dissipation for BSS63 on standard FR4?

The maximum continuous power dissipation is 250 mW at T_amb ≤ 25 °C when mounted on an FR4 PCB with single-sided 70 µm copper and standard SOT23 footprint. Derating is required above 25 °C at 2.0 mW/°C based on R_th(j-a) = 500 K/W, reaching zero dissipation at 150 °C junction temperature.

Can BSS63 replace a MOSFET in high-side switching applications?

No-it cannot directly replace a MOSFET due to fundamental differences in drive mechanism and conduction behavior. As a bipolar transistor, BSS63 requires continuous base current to maintain saturation, whereas MOSFETs are voltage-driven with near-zero gate current. Its −250 mV V_CEsat is competitive, but base drive overhead and slower switching make it unsuitable where gate-drive simplicity or >100 kHz switching is required.

Does BSS63 have built-in ESD protection?

No. The datasheet does not specify any integrated ESD protection diodes or HBM/CDM ratings. External protection (e.g., series resistors and TVS diodes) is recommended when handling or routing base/emitter connections in environments with electrostatic risk, especially during manual assembly or field service.

BSS63,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 2.5mA, 25mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 30 @ 25mA, 1V

Power - Max:: 250 mW

Frequency - Transition:: 85MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BSS63,215 FAQ

1.How can I place an order for BSS63,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS63,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS63,215 reliable?

The price and inventory of BSS63,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS63,215 is usually 5 days.

3.What payment methods are accepted for BSS63,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS63,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS63,215?

BSS63,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS63,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS63,215?

For technical support, including BSS63,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS63,215 requirements.

6.How does Aetrix verify that BSS63,215 is sourced from the original manufacturer or authorized distributors?

All BSS63,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS63,215 meets industry standards.

7.What is the process for return or replacement of BSS63,215?

All BSS63,215 units undergo pre-shipment inspection (PSI). If there is an issue with BSS63,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS63,215 part is unused and in its original packaging.

Return procedure for BSS63,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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