NXP Semiconductors BSS83,235

Overview

BSS83,235 from NXP Semiconductors is an N-channel enhancement-mode MOSFET in SOT143B package, rated for 10 V drain-source voltage, 50 mA DC drain current, and 230 mW power dissipation at 25 °C ambient. It features low ON-resistance (<45 Ω at V_GS = 10 V), sub-1 pF feedback capacitance (0.6 pF typ.), and integrated back-to-back gate–substrate diodes for input overvoltage protection - used as analog/digital switch or switch driver in low-voltage signal routing.

For engineers reviewing the BSS83,235 datasheet, BSS83,235 pinout, BSS83,235 application, or BSS83,235 equivalent, key selection criteria include its symmetrical drain/source configuration, gate-threshold range (0.1–2.0 V), ultrafast switching (t_on = 1.0 ns typ., t_off = 5.0 ns typ.), and suitability for low-power, high-speed discrete switching in space-constrained PCB layouts.

Technical Context

The BSS83,235 operates as a symmetrical, insulated-gate silicon MOSFET with substrate terminal (pin 1) electrically isolated and internally protected by dual zener diodes between gate and substrate. Its enhancement-mode behavior requires positive V_GS to conduct, with threshold defined at ID = 1 µA and V_SB = 0.

Thermal performance is characterized by R_{th j-a} = 430 K/W (free air), junction temperature limit of 125 °C, and storage range from −65 to +150 °C. Device operation under V_SB = 6.8 V shifts R_DS(on) to 80–120 Ω (typ./max), confirming body-diode-aware biasing requirements in bidirectional switch configurations.

Key Specifications

Pinout & Package

Package: SOT143B - plastic surface-mounted 4-lead package (3.0 × 1.4 mm footprint, 1.1 mm height), optimized for high-density PCB assembly and RF-sensitive routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel enhancement-mode MOSFET switching applications.

Compared with DMN2004K-7 and 2N7002K-T1-GE3, the BSS83,235 uniquely delivers symmetrical operation, integrated gate protection, and sub-pF Crss - making it irreplaceable in precision analog switching, RF path control, and low-voltage bidirectional signal routing where layout density and signal fidelity are constrained.

Availability

BSS83,235 is available at Aetrix Electronics and suitable for USB interface isolation, low-voltage logic translation, RF signal path control, and automated test equipment signal gating requiring stable component supply and long-term obsolescence management.

Supply support for BSS83,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BSS83,235 belongs to NXP's legacy discrete MOSFET portfolio designed specifically for high-speed, low-voltage analog and digital switching - emphasizing symmetry, low parasitics, and robust gate protection in miniature surface-mount packages.

FAQ

What is the maximum continuous drain current for the BSS83,235?

The BSS83,235 has a maximum DC drain current (I_D) of 50 mA, specified up to T_amb = 25 °C. Derating is required above this temperature per the R_{th j-a} = 430 K/W thermal resistance; at 70 °C ambient, usable I_D drops to approximately 27 mA to maintain T_j ≤ 125 °C. This rating confirms the BSS83,235 is intended for signal-level, not power-level, switching applications.

Is the BSS83,235 pin-compatible with other SOT-143 devices?

The BSS83,235 uses the SOT143B package with standardized 4-lead pinout (substrate, source, drain, gate), but pin compatibility is not guaranteed across all SOT143-marked parts due to internal substrate connection differences. The BSS83,235 explicitly ties pin 1 to substrate - a design-specific feature not shared by all SOT143 variants - so direct substitution requires verification of substrate handling and zener protection architecture in the target design.

Does the BSS83,235 support bidirectional signal flow?

Yes, the BSS83,235 supports bidirectional signal flow because its drain and source terminals are interchangeable per the official datasheet note. This symmetry arises from its symmetrical MOS structure and absence of intrinsic body diode dominance - enabling true analog switch behavior in both directions when V_SB = 0, as confirmed in Fig.3 and Fig.7 of the BSS83,235 product specification.

What is the gate-source threshold voltage range for the BSS83,235?

The BSS83,235 gate-source threshold voltage (V_GS(th)) is specified from >0.1 V to <2.0 V, measured at I_D = 1 µA with V_SB = 0. This wide range ensures reliable turn-on with 1.8 V, 2.5 V, and 3.3 V logic families without external level shifting. The BSS83,235 achieves full enhancement at V_GS ≥ 3.2 V even under elevated V_SB = 6.8 V conditions, as shown in Fig.4.

How does the integrated gate protection in the BSS83,235 function?

The BSS83,235 integrates back-to-back zener diodes between gate and substrate (pin 1), providing bidirectional ESD and overvoltage protection. Each diode exhibits V_Z > 12.5 V at ±10 µA, allowing the BSS83,235 to withstand transient spikes up to ±12 V without external clamps. This protection is intrinsic to the die structure and remains active regardless of source/drain bias - a key differentiator from unprotected MOSFETs like the 2N7002K-T1-GE3.