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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors BST16,115

Name: BST16,115
Brand: NXP Semiconductors
SKU: BST16,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BST16,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: BST16,115.pdf

Description:: TRANS PNP 300V 0.2A SOT-89-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BST16,115 from NXP Semiconductors (formerly Philips) is a PNP high-voltage bipolar junction transistor in SOT89 package, rated for −300 V V_CEO, −350 V V_CBO, and −200 mA DC collector current, with h_FE = 30–120 at −50 mA/−10 V, used in high-voltage switching circuits such as CRT flyback drivers and industrial power supply control stages.

For engineers reviewing the BST16,115 datasheet, BST16,115 pinout, BST16,115 application, or BST16,115 equivalent, key selection criteria include its PNP polarity, −300 V blocking capability, SOT89 thermal pad layout, and compatibility with BST39/BST40 NPN complements in push-pull configurations.

Technical Context

The BST16,115 operates as a medium-speed, high-voltage PNP switch with f_T ≥ 15 MHz and V_CEsat ≤ 750 mV at −50 mA/−5 mA drive, enabling efficient switching in <100 kHz power control topologies. Its low leakage (ICBO ≤ −100 nA at −280 V) supports stable operation under high-voltage bias conditions.

Designed for surface-mount use on single-sided PCBs with 6 cm² collector copper pad, it delivers R_th(j-a) = 95 K/W and R_th(j-s) = 15 K/W - critical for thermal management in compact high-voltage modules where heatsinking is constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−300 V - maximum sustainable collector-emitter voltage with base open; defines safe operating range in high-side PNP switch applications
V_CBO	−350 V - collector-base breakdown voltage; determines voltage margin in grounded-emitter configurations
I_C (DC)	−200 mA - continuous collector current rating; sets upper limit for steady-state load switching
h_FE	30–120 - DC current gain at −50 mA/−10 V; informs base drive sizing for saturation in linear or switching modes
V_CEsat	≤ 750 mV - saturation voltage at −50 mA/−5 mA; directly impacts conduction loss and thermal rise in on-state
f_T	≥ 15 MHz - transition frequency at −10 mA/−10 V; supports switching up to ~1–2 MHz with adequate gain margin
R_th(j-a)	95 K/W - junction-to-ambient thermal resistance on standard PCB; dictates maximum power dissipation at given ambient temperature

Pinout & Package

SOT89 plastic surface-mount package with exposed collector pad for enhanced thermal transfer; 3-lead configuration compliant with IEC 60134 limiting values and JEDEC TO-243 outline.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current source terminal in PNP operation; connected to highest potential node in high-side switch topology
2	Collector	Main current sink terminal with thermal pad; must be soldered to ≥6 cm² copper area for rated power handling
3	Base	Control input requiring negative current to turn on; logic-level compatible only with active pull-down drivers

Key Features

Feature	Design Value
High-voltage blocking	Rated for −300 V V_CEO and −350 V V_CBO, enabling direct interface with 200–250 V DC bus or CRT anode supplies
Thermally optimized SOT89	Exposed collector pad and R_th(j-s) = 15 K/W allow 1.3 W dissipation with minimal board-area footprint
Controlled gain range	h_FE = 30–120 ensures predictable base drive requirements across production lots
Low leakage performance	ICBO ≤ −100 nA at −280 V supports stable biasing in high-impedance, high-voltage feedback networks

Applications

Switch-Mode Power Supply Control	CRT Flyback Driver
Use Scenario: High-side switching in offline AC-DC converters with >200 V DC link voltage. IC Role / Device Role / Timing Role: PNP high-voltage switch controlling primary-side current in quasi-resonant or fixed-frequency topologies. Use Value: −300 V V_CEO rating eliminates need for series-connected transistors; SOT89 thermal pad enables compact heatsinkless design.	Use Scenario: Horizontal deflection output stage driving CRT yoke and flyback transformer. IC Role / Device Role / Timing Role: Fast-switching PNP transistor generating high-voltage flyback pulses during line retrace. Use Value: f_T ≥ 15 MHz and low C_c (≤15 pF) support clean pulse edges and reduced ringing in high-dV/dt environments.
Industrial Relay Driver	High-Voltage Signal Amplifier
Use Scenario: Solid-state replacement for electromechanical relays controlling 120/240 VAC loads. IC Role / Device Role / Timing Role: Medium-current PNP switch interfacing microcontroller GPIO to opto-isolated gate drivers or snubber networks. Use Value: −200 mA I_C and −750 mV V_CEsat enable direct drive of small solenoids or pilot relays without external amplification.	Use Scenario: Linear amplification of low-frequency high-voltage signals in test equipment or sensor conditioning. IC Role / Device Role / Timing Role: Class-A PNP amplifier stage operating with emitter-follower or common-base configuration. Use Value: Stable h_FE range and low ICBO ensure predictable gain and offset behavior over temperature in precision HV analog paths.

Switch-Mode Power Supply Control

CRT Flyback Driver

Use Scenario: High-side switching in offline AC-DC converters with >200 V DC link voltage.

IC Role / Device Role / Timing Role: PNP high-voltage switch controlling primary-side current in quasi-resonant or fixed-frequency topologies.

Use Value: −300 V V_CEO rating eliminates need for series-connected transistors; SOT89 thermal pad enables compact heatsinkless design.

Use Scenario: Horizontal deflection output stage driving CRT yoke and flyback transformer.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor generating high-voltage flyback pulses during line retrace.

Use Value: f_T ≥ 15 MHz and low C_c (≤15 pF) support clean pulse edges and reduced ringing in high-dV/dt environments.

Industrial Relay Driver

High-Voltage Signal Amplifier

Use Scenario: Solid-state replacement for electromechanical relays controlling 120/240 VAC loads.

IC Role / Device Role / Timing Role: Medium-current PNP switch interfacing microcontroller GPIO to opto-isolated gate drivers or snubber networks.

Use Value: −200 mA I_C and −750 mV V_CEsat enable direct drive of small solenoids or pilot relays without external amplification.

Use Scenario: Linear amplification of low-frequency high-voltage signals in test equipment or sensor conditioning.

IC Role / Device Role / Timing Role: Class-A PNP amplifier stage operating with emitter-follower or common-base configuration.

Use Value: Stable h_FE range and low ICBO ensure predictable gain and offset behavior over temperature in precision HV analog paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCP56-16,115	V_CEO = −60 V, I_C = −1 A, h_FE = 100–250 - lower voltage, higher current, higher gain	Not suitable for >100 V blocking; better for low-voltage, high-current switching	Select when V_CEO < −100 V and I_C > −500 mA required; not a drop-in replacement
MMBT4403LT1G	V_CEO = −40 V, I_C = −600 mA, SOT23 package - much lower voltage, smaller package, no thermal pad	Limited to low-voltage signal switching; unsuitable for flyback or SMPS primary-side use	Choose only for general-purpose low-voltage amplification or logic-level switching where space is critical

Compared with BCP56-16,115 and MMBT4403LT1G, the BST16,115 uniquely balances −300 V blocking, −200 mA current, and SOT89 thermal capability - making it irreplaceable in compact high-voltage switching where both voltage headroom and board-level heat dissipation matter.

Availability

BST16,115 is available at Aetrix Electronics and suitable for switch-mode power supplies, CRT display systems, industrial relay drivers, and high-voltage signal amplifiers requiring stable component supply across extended production lifecycles.

Supply support for BST16,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity, automotive, industrial, and power management solutions.

The BST16,115 belongs to NXP's legacy high-voltage discrete transistor family, designed specifically for robust, cost-effective switching in consumer CRT, industrial power, and analog signal conditioning applications where reliability under sustained high-voltage stress is essential.

FAQ

What is the maximum collector-emitter voltage rating for BST16,115?

The BST16,115 has a maximum collector-emitter voltage (V_CEO) rating of −300 V with the base open, as specified in the Absolute Maximum Ratings table. This rating is validated under standard mounting conditions (single-sided PCB, 6 cm² collector copper pad), and exceeding this voltage risks permanent device failure. The BST16,115 must not be operated beyond −300 V in any circuit configuration without derating per thermal and reliability guidelines.

Is BST16,115 pin-compatible with BST15,115?

Yes, BST16,115 and BST15,115 share identical SOT89 package dimensions, pinout (emitter-collector-base on pins 1–2–3), and mechanical footprint. However, their electrical ratings differ: BST15,115 is rated for −200 V V_CEO, while BST16,115 supports −300 V. Substitution requires verification that the higher voltage rating is necessary and that gain (h_FE 30–120 vs. 30–150) and leakage meet system requirements.

What is the recommended PCB layout for thermal performance of BST16,115?

For optimal thermal performance, the BST16,115 collector pad (pin 2) must be soldered to a minimum 6 cm² single-sided copper area, tin-plated, per the datasheet's thermal characterization note. Avoid thermal relief spokes; use solid copper fill. Keep traces to emitter and base short and low-inductance. Do not place thermal vias under the collector pad unless validated for equivalent thermal resistance - the original specification assumes surface-only conduction.

Does BST16,115 have an NPN complement in the same package?

Yes, the BST39 and BST40 are the designated NPN complements to BST16,115, also offered in SOT89 package. BST39 matches BST15's voltage rating (−200 V), while BST40 aligns with BST16,115's −300 V capability. All four devices (BST15/BST16/BST39/BST40) share identical pinout and thermal characteristics, enabling matched push-pull or complementary switching designs without layout changes.

What is the typical transition frequency (f_T) of BST16,115 and how does it affect switching speed?

The BST16,115 has a minimum transition frequency (f_T) of 15 MHz at −10 mA collector current and −10 V V_CE. This indicates usable gain up to several megahertz, supporting clean switching in flyback and resonant converters operating below 2 MHz. While not optimized for RF, this f_T ensures sufficient bandwidth for fast edge rates in high-voltage pulse generation - critical for minimizing switching losses in the BST16,115's target applications.

BST16,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 300 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 30 @ 50mA, 10V

Power - Max:: 1.3 W

Frequency - Transition:: 15MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89-3

BST16,115 FAQ

1.How can I place an order for BST16,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BST16,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BST16,115 reliable?

The price and inventory of BST16,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BST16,115 is usually 5 days.

3.What payment methods are accepted for BST16,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BST16,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BST16,115?

BST16,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BST16,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BST16,115?

For technical support, including BST16,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BST16,115 requirements.

6.How does Aetrix verify that BST16,115 is sourced from the original manufacturer or authorized distributors?

All BST16,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BST16,115 meets industry standards.

7.What is the process for return or replacement of BST16,115?

All BST16,115 units undergo pre-shipment inspection (PSI). If there is an issue with BST16,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BST16,115 part is unused and in its original packaging.

Return procedure for BST16,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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