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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BSV52LT1

Name: BSV52LT1
Brand: onsemi
SKU: BSV52LT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSV52LT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSV52LT1.pdf

Description:: TRANS NPN 12V 0.1A SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,482

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Product details

Overview

BSV52LT1 from onsemi is an NPN silicon switching transistor in SOT-23 package, rated for 12 V_CEO, 100 mA continuous collector current, and 400 MHz f_T, optimized for high-speed digital switching in low-voltage logic interface and signal routing applications.

For engineers reviewing the BSV52LT1 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/I_C margin, saturation voltage at 10–50 mA drive, thermal resistance on FR-5 board (556 °C/W), and SOT-23 pin compatibility with base-emitter-collector layout.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor with fixed emitter-base-collector terminal assignment (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector). Its 400 MHz f_T and sub-300 mV V_CE(sat) at I_C = 10 mA / I_B = 300 µA support fast turn-on/turn-off times (t_on ≤ 12 ns, t_off ≤ 18 ns).

Thermal performance is defined for two mounting conditions: 225 mW dissipation on FR-5 board (derating 1.8 mW/°C above 25 °C) and 300 mW on alumina substrate (derating 2.4 mW/°C), enabling use in space-constrained PCBs where ambient temperature exceeds 85 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	12 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions.
I_C (continuous)	100 mA - Continuous DC collector current limit without thermal shutdown on standard FR-5 PCB.
f_T	400 MHz - Minimum transition frequency ensuring reliable small-signal amplification up to UHF band.
V_CE(sat) @ 10 mA/300 µA	300 mV - Low saturation voltage enabling efficient switching in 3.3 V and 5 V logic-level circuits.
t_off	18 ns - Turn-off delay critical for pulse-width modulation and clocked signal gating at >10 MHz rates.
R_JA (FR-5)	556 °C/W - Thermal resistance defining junction temperature rise per milliwatt dissipated on standard epoxy board.

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package, 2.90 × 1.30 × 1.00 mm body, 1.90 mm lead pitch, JEDEC-compliant footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires ≥700 mV V_BE(sat) to fully saturate transistor at 10 mA I_C.
2	Emitter	Current return path; internally connected to PCB ground plane in common-emitter configurations.
3	Collector	Output node; sinks load current up to 100 mA when base driven; connects to V_CC via pull-up resistor.

Key Features

Feature	Design Value
Pb-free, RoHS-compliant construction	Meets EU Directive 2011/65/EU and halogen-free/BFR-free requirements for industrial and consumer PCB assembly.
Low V_CE(sat) at 10 mA	300 mV ensures <1% voltage drop across switch in 3.3 V systems, minimizing power loss and self-heating.
Fast switching (t_on/t_off)	12 ns / 18 ns enables clean edge transitions in 50 MHz digital clocks and PWM signals without overshoot.
High f_T (400 MHz)	Supports stable gain in RF pre-driver stages and broadband amplifier designs up to 200 MHz.

Applications

Logic Level Translation	LED Driver Switch
Use Scenario: Converting 1.8 V GPIO output to drive 5 V TTL-compatible inputs in mixed-voltage microcontroller systems. IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology with base resistor biasing. Use Value: 300 mV V_CE(sat) preserves >4.7 V output swing at 5 V rail, meeting VIH minimum for downstream ICs.	Use Scenario: Driving discrete red/green LEDs in portable instrumentation status indicators with PWM dimming. IC Role / Device Role / Timing Role: Low-side current sink switch controlled by MCU PWM pin. Use Value: 18 ns t_off supports 20 MHz PWM carrier frequency, enabling fine-grained brightness control without visible flicker.
Signal Routing Multiplexer	Load Switch for Sensor Bias
Use Scenario: Selecting between two analog sensor outputs before ADC sampling in battery-powered environmental monitors. IC Role / Device Role / Timing Role: High-speed analog switch using BSV52LT1 in emitter-follower configuration for minimal loading. Use Value: 4.0 pF C_obo limits capacitive crosstalk between channels during 100 kHz multiplexing cycles.	Use Scenario: Enabling/disabling bias current to a precision temperature sensor only during measurement intervals. IC Role / Device Role / Timing Role: Power-gating transistor placed between V_CC and sensor supply pin. Use Value: 100 nA I_CBO at 125 °C ensures <100 nA leakage into sensor circuit, preserving ±0.1 °C accuracy.

Logic Level Translation

LED Driver Switch

Use Scenario: Converting 1.8 V GPIO output to drive 5 V TTL-compatible inputs in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology with base resistor biasing.

Use Value: 300 mV V_CE(sat) preserves >4.7 V output swing at 5 V rail, meeting VIH minimum for downstream ICs.

Use Scenario: Driving discrete red/green LEDs in portable instrumentation status indicators with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current sink switch controlled by MCU PWM pin.

Use Value: 18 ns t_off supports 20 MHz PWM carrier frequency, enabling fine-grained brightness control without visible flicker.

Signal Routing Multiplexer

Load Switch for Sensor Bias

Use Scenario: Selecting between two analog sensor outputs before ADC sampling in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: High-speed analog switch using BSV52LT1 in emitter-follower configuration for minimal loading.

Use Value: 4.0 pF C_obo limits capacitive crosstalk between channels during 100 kHz multiplexing cycles.

Use Scenario: Enabling/disabling bias current to a precision temperature sensor only during measurement intervals.

IC Role / Device Role / Timing Role: Power-gating transistor placed between V_CC and sensor supply pin.

Use Value: 100 nA I_CBO at 125 °C ensures <100 nA leakage into sensor circuit, preserving ±0.1 °C accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT2222ALT1G	Higher V_CEO (40 V), higher I_C (600 mA), but slower f_T (300 MHz) and higher V_CE(sat) (1 V @ 150 mA).	Better for 12–24 V industrial loads; less suitable for high-frequency <5 V logic switching.	Select when higher breakdown margin or current drive is required over speed or low-voltage efficiency.
DXTN2222ALP-7	Same SOT-23 package, identical pinout (Style 6), but specified for 150 °C operation and tighter h_FE binning (100–300).	Preferred for automotive under-hood modules requiring extended temperature qualification.	Choose when AEC-Q101 compliance or guaranteed h_FE consistency across production lots is mandatory.

Compared with MMBT2222ALT1G and DXTN2222ALP-7, the BSV52LT1 delivers superior high-frequency switching performance and lower saturation loss in 3.3 V/5 V logic interfaces, while trading off absolute voltage/current headroom and automotive qualification.

Availability

BSV52LT1 is available at Aetrix Electronics and suitable for logic level translation, LED driver switching, signal routing multiplexing, and sensor bias load switching requiring stable component supply and consistent SOT-23 footprint availability.

Supply support for BSV52LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The BSV52LT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume digital switching applications where speed, low saturation voltage, and SOT-23 reliability are prioritized over ultra-high voltage or current capability.

FAQ

What is the maximum operating temperature for the BSV52LT1?

The BSV52LT1 has a junction and storage temperature range of −55 °C to +150 °C. Its thermal resistance is 556 °C/W on FR-5 board, so at 100 mW dissipation and 25 °C ambient, junction temperature reaches 80.6 °C - well within safe limits. Derating begins above 25 °C at 1.8 mW/°C. The BSV52LT1 remains functional up to its full 150 °C rating when mounted on alumina substrate.

Is the BSV52LT1 pin-compatible with other SOT-23 NPN transistors?

Yes - the BSV52LT1 uses Style 6 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), matching industry-standard SOT-23 NPN layouts including MMBT2222A and DXTN2222ALP-7. This allows direct PCB footprint reuse. However, electrical parameters like f_T, V_CE(sat), and h_FE differ, so circuit validation is required when substituting the BSV52LT1 into existing designs.

Does the BSV52LT1 support 3.3 V logic-level drive?

Yes - the BSV52LT1 achieves full saturation with V_BE(sat) as low as 700 mV at I_C = 10 mA, making it compatible with 3.3 V CMOS outputs driving through a 10 kΩ base resistor. At I_B = 300 µA, V_CE(sat) is only 300 mV, ensuring robust switching even with marginal base drive. The BSV52LT1 is routinely used in 3.3 V FPGA I/O expansion and microcontroller GPIO buffering.

What is the typical storage time (t_s) of the BSV52LT1?

The BSV52LT1 has a maximum storage time (t_s) of 13 ns under test conditions of I_C = I_B1 = I_B2 = 10 mA. This short storage delay contributes to its fast overall switching performance and makes the BSV52LT1 suitable for high-duty-cycle digital signal routing where charge retention in the base region must be minimized to avoid propagation delay skew.

Is the BSV52LT1 RoHS-compliant and halogen-free?

Yes - the BSV52LT1 is explicitly marked Pb-free, halogen-free, and BFR-free in its official datasheet, and complies with RoHS Directive 2011/65/EU. The "G" suffix in BSV52LT1G denotes this compliance. All materials and plating meet IPC-J-STD-609 Class 1 requirements, and the BSV52LT1 is qualified for lead-free reflow soldering profiles up to 260 °C peak temperature.

BSV52LT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 12 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 10mA, 1V

Power - Max:: 225 mW

Frequency - Transition:: 400MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

BSV52LT1 FAQ

1.How can I place an order for BSV52LT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSV52LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSV52LT1 reliable?

The price and inventory of BSV52LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSV52LT1 is usually 5 days.

3.What payment methods are accepted for BSV52LT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSV52LT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSV52LT1?

BSV52LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSV52LT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSV52LT1?

For technical support, including BSV52LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSV52LT1 requirements.

6.How does Aetrix verify that BSV52LT1 is sourced from the original manufacturer or authorized distributors?

All BSV52LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSV52LT1 meets industry standards.

7.What is the process for return or replacement of BSV52LT1?

All BSV52LT1 units undergo pre-shipment inspection (PSI). If there is an issue with BSV52LT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSV52LT1 part is unused and in its original packaging.

Return procedure for BSV52LT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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