Infineon Technologies BTN9960LVAUMA1

Overview

BTN9960LVAUMA1 from Infineon Technologies is an AEC-Q100 Grade 1 qualified MOTIX™ single high-current half-bridge IC integrating one p-channel high-side and one n-channel low-side MOSFET with driver logic, thermal/overcurrent/undervoltage protection, and adjustable slew rate control. It operates from 8 V–18 V (up to 40 V transient), delivers ≤18.1 mΩ path resistance at 150°C, supports ≥35 A overcurrent detection, and targets 12 V brushed DC motor drives in automotive fuel and washer pumps.

For engineers reviewing the BTN9960LVAUMA1 datasheet, BTN9960LVAUMA1 pinout, BTN9960LVAUMA1 application, or BTN9960LVAUMA1 equivalent, key selection criteria include its integrated charge-pump-free p-channel HS switch, 8-level slew rate tuning for EME optimization, status flag diagnostics (current/temperature/slew), and PG-HSOF-7-1 (sTOLL) thermally enhanced package.

Technical Context

The device implements a dual-chip power stage (p-CH HS + n-CH LS MOSFETs) on a common lead frame with vertical MOS technology for low R_DS(on), eliminating external charge pump circuitry. Its driver IC provides logic-level inputs (IN/INH), dead-time generation, and latch-off overcurrent response with restart capability.

Protection functions operate independently: undervoltage shutdown triggers below ~4.5 V with hysteresis; overtemperature shutdown activates at T_j ≥ 150°C; overcurrent detection uses internal current-sense amplifier with ≥35 A minimum trip level and fast response time (<1 µs).

Key Specifications

Pinout & Package

Package: PG-HSOF-7-1 (sTOLL) - thermally optimized exposed-pad SOIC variant with integrated heat slug for high-power density in automotive under-hood environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current half-bridge motor drive applications.

Compared with BTN8962TAUMA1 and TPIC2603D, BTN9960LVAUMA1 uniquely combines AEC-Q100 Grade 1 qualification, 8-level slew rate control, and multiplexed IS diagnostics in a single sTOLL package - making it optimal for cost-sensitive, EME-constrained automotive 12 V motor drives where integration and diagnostics reduce system complexity.

Availability

BTN9960LVAUMA1 is available at Aetrix Electronics and suitable for automotive fuel pump control, windshield washer motor drive, and HVAC blower fan applications requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for BTN9960LVAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

BTN9960LVAUMA1 belongs to the MOTIX™ single half-bridge product line, designed specifically for protected, high-current PWM motor drives in 12 V automotive subsystems where board space, EME, and functional safety are critical.

FAQ

What is the maximum continuous output current supported by BTN9960LVAUMA1?

The device supports continuous output current up to 10 A at T_A = 85°C with proper PCB copper area and thermal vias under the exposed pad. Peak pulsed current capability reaches 35 A for durations ≤100 µs, limited by overcurrent protection threshold and thermal mass. Actual current depends on ambient temperature, heatsinking, and PWM duty cycle - design must respect R_thJA = 19 K/W and derate above 100°C junction temperature.

How does the IS pin provide current and temperature information simultaneously?

The IS pin outputs a single analog voltage that encodes multiple parameters: 0.5 V corresponds to 0 A current; slope is 0.2 V/A for current sense. Temperature is encoded as offset shift - at 25°C, zero-current baseline is ~1.25 V, decreasing by ~2.5 mV/°C. Slew rate level appears as discrete voltage steps (e.g., 1.8 V for slowest, 2.4 V for fastest). Fault conditions pull IS low (≤0.4 V) with specific pulse patterns indicating overtemperature or overcurrent.

Can BTN9960LVAUMA1 be used in H-bridge configurations?

Yes - two BTN9960LVAUMA1 devices can be combined to form a full H-bridge: one controls the high-side switches (OUT connected to motor A), the other controls low-side switches (OUT connected to motor B). The integrated dead-time generation prevents shoot-through, and independent IN/INH control enables four-quadrant operation. External logic must coordinate complementary signals to avoid simultaneous high-side/low-side activation in same leg.

Does BTN9960LVAUMA1 require external bootstrap capacitors or charge pumps?

No - the p-channel high-side MOSFET eliminates the need for external bootstrap circuitry or charge pumps. This simplifies layout, reduces component count, and improves EME performance by removing high-frequency switching nodes associated with charge-pump operation. The driver IC directly controls both MOSFET gates using the VS supply rail, enabling true single-rail 12 V operation.