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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors BUJ106A,127

Name: BUJ106A,127
Brand: NXP Semiconductors
SKU: BUJ106A,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUJ106A,127

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: BUJ106A,127.pdf

Description:: TRANS NPN 400V 10A TO-220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BUJ106A,127 from NXP Semiconductors is a high-voltage, high-speed npn silicon diffused power transistor in TO220AB package, rated for 700 V V_CESM, 10 A DC collector current, and 80 W total power dissipation at T_mb ≤ 25 °C. It delivers 0.4 V typical V_CEsat at I_C = 6.0 A / I_B = 1.2 A and 20 ns typical fall time under inductive switching, targeting electronic lighting ballasts and motor control systems.

For engineers reviewing the BUJ106A,127 datasheet, BUJ106A,127 pinout, BUJ106A,127 application, or BUJ106A,127 equivalent, key selection criteria include peak voltage capability (700 V), thermal resistance (R_{th j-mb} = 1.56 K/W), saturation performance under high-current drive, and safe operating area under reverse-biased turn-off conditions.

Technical Context

The BUJ106A,127 employs planar passivation for robust high-voltage operation and is optimized for fast switching in inductive loads, with documented t_f = 20–50 ns and t_s = 1.35–3.2 µs depending on junction temperature and load configuration. Its base-emitter saturation voltage is specified at 1.0–1.5 V under I_C/I_B = 5, supporting efficient drive in high-frequency converters.

It operates within a junction temperature range of –65 °C to 150 °C and features a mounting-base-connected collector tab, requiring mechanical isolation from heatsink unless electrically referenced. The device's reverse bias safe operating area (RBSOA) is characterized up to V_CEclamp = 900 V with –V_BE = 1–5 V, enabling reliable snubberless operation in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CESM	700 V peak - supports mains-referenced switching in 230 V AC-fed ballasts and inverters without external clamping.
I_C (DC)	10 A - enables continuous conduction mode operation in 200–500 W lighting and motor drives.
P_tot	80 W at T_mb ≤ 25 °C - requires heatsinking with R_{th j-mb} ≤ 1.56 K/W for sustained full-load operation.
V_CEsat	0.4 V typ @ I_C=6 A/I_B=1.2 A - minimizes conduction loss and thermal stress during saturation.
t_f (inductive)	20 ns typ @ T_j=25 °C - ensures low switching loss and EMI in >50 kHz lighting ballast designs.
R_{th j-mb}	1.56 K/W max - defines minimum heatsink thermal resistance needed to maintain T_j ≤ 150 °C.
h_FEsat	10–15 @ I_C=6 A/V_CE=5 V - confirms stable forced-beta operation under hard-switching conditions.

Pinout & Package

Package: TO220AB, with metal tab electrically connected to pin 2 (collector); net mass 2 g; UL94 V0 epoxy; mounting base thermally and electrically tied to collector.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~1.2 A drive current for full saturation at 6 A collector load.
2	Collector	Main high-voltage power terminal; also connected to metal tab for direct heatsink mounting.
3	Emitter	Low-side return path; isolated from tab-enables grounded-emitter topology with common-source reference.
Tab	Collector	Electrically and thermally identical to pin 2; must be insulated from chassis unless collector is system ground.

Key Features

Feature	Design Value
High-voltage ruggedness	700 V V_CESM and 400 V V_CEO enable direct connection to rectified 230 V AC lines without series stacking.
Fast inductive switching	20 ns typical fall time with 1 µH inductive load supports >100 kHz operation in resonant lamp drivers.
Thermally optimized package	R_{th j-mb} = 1.56 K/W allows compact heatsink design while maintaining T_j ≤ 150 °C at full 10 A DC.
Reverse bias SOA	Characterized RBSOA up to 900 V clamp with –V_BE = 1–5 V supports snubberless flyback and ZVS transitions.
Planar passivation	Stable leakage (I_CEO ≤ 0.1 mA at 400 V) and long-term reliability in humid or high-stress lighting environments.

Applications

Electronic Lighting Ballast	Switch-Mode Power Supply
Use Scenario: High-frequency (25–65 kHz) series-resonant dimmable fluorescent lamp driver with active PFC front-end. IC Role / Device Role / Timing Role: Main switch in half-bridge inverter stage, handling 6–8 A peak current and 400–600 V blocking. Use Value: Low V_CEsat and fast t_f reduce conduction and switching losses, improving efficiency to >90% and enabling fanless enclosure design.	Use Scenario: 300 W offline DC-DC converter for industrial control power supply using forward or flyback topology. IC Role / Device Role / Timing Role: Primary-side power switch operating at 50–100 kHz with 200–300 V DC bus. Use Value: 700 V V_CESM rating eliminates need for voltage clamping networks, simplifying layout and reducing BOM count.
Motor Control System	Induction Heating Inverter
Use Scenario: 1/2 HP single-phase BLDC motor controller with six-step commutation and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, switching at ≤20 kHz with 10 A peak current. Use Value: Confirmed RBSOA at –V_BE = 5 V prevents secondary breakdown during inductive kickback, enhancing fault tolerance.	Use Scenario: 2 kW resonant inverter for domestic induction cooktop operating at 20–50 kHz. IC Role / Device Role / Timing Role: Half-bridge switch handling 15 A peak current and 600 V transient voltage during zero-voltage switching transitions. Use Value: 1.56 K/W R_{th j-mb} enables direct mounting to aluminum heatsink, maintaining thermal stability across extended cooking cycles.

Electronic Lighting Ballast

Switch-Mode Power Supply

Use Scenario: High-frequency (25–65 kHz) series-resonant dimmable fluorescent lamp driver with active PFC front-end.

IC Role / Device Role / Timing Role: Main switch in half-bridge inverter stage, handling 6–8 A peak current and 400–600 V blocking.

Use Value: Low V_CEsat and fast t_f reduce conduction and switching losses, improving efficiency to >90% and enabling fanless enclosure design.

Use Scenario: 300 W offline DC-DC converter for industrial control power supply using forward or flyback topology.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 50–100 kHz with 200–300 V DC bus.

Use Value: 700 V V_CESM rating eliminates need for voltage clamping networks, simplifying layout and reducing BOM count.

Motor Control System

Induction Heating Inverter

Use Scenario: 1/2 HP single-phase BLDC motor controller with six-step commutation and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, switching at ≤20 kHz with 10 A peak current.

Use Value: Confirmed RBSOA at –V_BE = 5 V prevents secondary breakdown during inductive kickback, enhancing fault tolerance.

Use Scenario: 2 kW resonant inverter for domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch handling 15 A peak current and 600 V transient voltage during zero-voltage switching transitions.

Use Value: 1.56 K/W R_{th j-mb} enables direct mounting to aluminum heatsink, maintaining thermal stability across extended cooking cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar npn power switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics BUL128D	Same TO220AB package; V_CESM = 700 V, I_C = 12 A, but higher V_CEsat (0.8 V typ) and slower t_f (100 ns).	Less suitable for >50 kHz ballasts due to higher switching loss; better for lower-frequency motor drives where conduction loss dominates.	Select BUL128D only when higher DC current headroom is prioritized over high-frequency efficiency.
ON Semiconductor MJE13009	TO220 package; V_CEO = 400 V, I_C = 12 A, but no published V_CESM or RBSOA data; t_f = 150 ns typ.	Lacks documented reverse-bias SOA and high-speed inductive switching characterization-unsuitable for snubberless or resonant designs.	Choose MJE13009 only for non-critical, low-frequency (<20 kHz), non-resonant applications with conservative voltage derating.

Compared with BUL128D and MJE13009, the BUJ106A,127 offers superior high-frequency switching performance and verified RBSOA, making it the preferred choice for lighting ballasts and resonant inverters where voltage transients and switching speed directly impact efficiency and reliability.

Availability

BUJ106A,127 is available at Aetrix Electronics and suitable for electronic lighting ballasts, industrial switch-mode power supplies, and motor control systems requiring stable component supply and long-lifecycle support.

Supply support for BUJ106A,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, logic, and power discrete solutions for industrial, automotive, and consumer markets.

The BUJ106A,127 belongs to NXP's legacy high-voltage npn power transistor family, engineered specifically for high-frequency switching in lighting, power conversion, and motor control applications demanding rugged voltage handling and fast dynamic response.

FAQ

What is the maximum junction temperature rating for BUJ106A,127?

The BUJ106A,127 has a maximum junction temperature (T_j) rating of 150 °C, as defined in its Absolute Maximum Ratings table. This limit must not be exceeded during operation, and thermal design must ensure that power dissipation-combined with R_{th j-mb} = 1.56 K/W and heatsink resistance-keeps actual T_j within specification across all ambient and load conditions. The BUJ106A,127 datasheet provides derating curves for power versus mounting base temperature.

Is BUJ106A,127 pin-compatible with other TO220AB npn transistors like BUL128D?

The BUJ106A,127 uses standard TO220AB pinning (pin 1 = base, pin 2 = collector/tab, pin 3 = emitter), matching the mechanical footprint and terminal assignment of BUL128D and MJE13009. However, electrical characteristics-including V_CEsat, switching times, and RBSOA-are not identical, so circuit validation is required before substitution. The BUJ106A,127 is not a drop-in replacement without functional verification.

Does BUJ106A,127 support snubberless operation in flyback converters?

Yes-the BUJ106A,127 includes published Reverse Bias Safe Operating Area (RBSOA) data up to 900 V clamp voltage with –V_BE = 1–5 V, confirming its capability for snubberless operation in flyback and resonant topologies. This RBSOA characterization distinguishes the BUJ106A,127 from many general-purpose transistors and is explicitly validated in Figure 13 of the BUJ106A,127 datasheet.

What is the typical base-emitter saturation voltage for BUJ106A,127?

The BUJ106A,127 exhibits a typical V_BEsat of 1.0 V at I_C = 6.0 A and I_B = 1.2 A, with a maximum of 1.5 V under those conditions. This value is critical for drive circuit design, as it determines base resistor sizing and gate-driver output requirements. The BUJ106A,127 datasheet also provides V_BEsat vs. I_C curves (Figure 10) for precise biasing across load ranges.

Can BUJ106A,127 be used in automotive applications?

No-the BUJ106A,127 is not automotive-qualified. Per NXP's legal disclaimers, unless explicitly stated as automotive qualified in the datasheet, the product is neither tested nor warranted for automotive use. The BUJ106A,127 datasheet contains no AEC-Q101 stress reports or automotive-grade screening, and its qualification status is marked "Production" but non-automotive. Use in automotive systems is at the customer's sole risk.

BUJ106A,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 1.2A, 6A

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 14 @ 500mA, 5V

Power - Max:: 80 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUJ106A,127 FAQ

1.How can I place an order for BUJ106A,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUJ106A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUJ106A,127 reliable?

The price and inventory of BUJ106A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUJ106A,127 is usually 5 days.

3.What payment methods are accepted for BUJ106A,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUJ106A,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUJ106A,127?

BUJ106A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUJ106A,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUJ106A,127?

For technical support, including BUJ106A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUJ106A,127 requirements.

6.How does Aetrix verify that BUJ106A,127 is sourced from the original manufacturer or authorized distributors?

All BUJ106A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUJ106A,127 meets industry standards.

7.What is the process for return or replacement of BUJ106A,127?

All BUJ106A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUJ106A,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUJ106A,127 part is unused and in its original packaging.

Return procedure for BUJ106A,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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