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Nexperia USA Inc. BUK9C07-65BIT,118

Part No.:
BUK9C07-65BIT,118
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixBUK9C07-65BIT,118.pdf
Description:
TRANS D2PAK-7
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,102

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Product details

Overview

BUK9C07-65BIT from NXP Semiconductors is an AEC-Q101-qualified N-channel logic-level TrenchPLUS power MOSFET in SOT427 (D2PAK) package, featuring 65 V V(BR)DSS, 6 mΩ RDSon at VGS = 5 V and 25 °C, integrated current-sense transistor with 12068 A/A ID/Isense ratio, and built-in overtemperature protection diodes. It serves as a high-efficiency, current-monitored high-side or low-side switch in automotive power distribution systems.

For engineers reviewing the BUK9C07-65BIT datasheet, BUK9C07-65BIT pinout, BUK9C07-65BIT application, or BUK9C07-65BIT equivalent, key selection criteria include its Kelvin-source layout for accurate RDSon stability, 75 A continuous drain current capability at Tmb = 25 °C, integrated temperature sense diode (VF = 2.9 V at 25 °C), and avalanche ruggedness of 0.605 J under unclamped conditions.

Technical Context

This device implements a trench-gate MOSFET architecture with split-source Kelvin connection (pins 6 and 7) to eliminate source inductance impact on switching and sensing accuracy. The integrated current-sense transistor shares the same die and thermal environment as the main FET, enabling precise real-time current monitoring without external shunts.

It includes monolithically integrated temperature-sense diodes (Visol(FET-TSD) = 100 V isolation) with -5.7 mV/K temperature coefficient, supporting closed-loop thermal management. The device operates within a junction temperature range of −55 °C to 150 °C and supports logic-level gate drive down to 4.5 V.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 65 V - Maximum drain-source blocking voltage before avalanche onset; enables use in 48 V automotive systems with margin.
RDSon 6 mΩ @ VGS = 5 V, ID = 25 A, Tj = 25 °C - Low conduction loss supports high-current switching with <1.5 W dissipation at 25 A.
ID/Isense 12068 A/A - Precise current mirroring ratio allows ±1% sensing accuracy with appropriate external amplification.
QG(tot) 102.8 nC - Gate charge optimized for fast switching with moderate gate driver strength (e.g., 1–2 A peak).
Rth(j-mb) 0.51 K/W - Thermal resistance from junction to mounting base enables 245 W total power dissipation at Tmb = 25 °C.
EDS(AL)S 0.605 J - Single-pulse unclamped avalanche energy rating ensures robustness against inductive load turn-off transients.
VF(TSD) 2.9 V @ IF = 250 µA, Tj = 25 °C - Forward voltage of integrated temperature sense diode used for real-time die temperature feedback.

Pinout & Package

SOT427 (D2PAK) plastic single-ended surface-mounted package with 7 leads (one lead cropped); features isolated mounting base, Kelvin source configuration, and thermally enhanced copper tab for direct heatsink attachment.

Pin/Terminal Circuit Role Design Meaning
1 G Gate terminal - referenced to Kelvin source (pin 6); requires low-inductance PCB routing for stable switching.
2 IS Current sense output - provides scaled replica of drain current; must be routed away from noisy power paths.
3 A Anode of integrated temperature sense diode - connects to external bias circuit for die temperature measurement.
4 D Main drain terminal - high-current path; bonded directly to internal die drain metallization.
5 K Cathode of integrated temperature sense diode - forms diode pair with pin 3 for ratiometric temperature sensing.
6 KS Kelvin source - dedicated low-current return for gate drive and sense circuits; eliminates IR drop error in RDSon and Isense.
7 S Main source terminal - carries full load current; connected to power ground plane with minimum trace inductance.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive under-hood applications including engine control, body electronics, and ADAS power stages.
Integrated current sense transistor Enables shunt-free current monitoring with 12068 A/A ratio and <±2% variation across temperature and process.
Kelvin source (KS) and main source (S) separation Eliminates source inductance impact on gate drive loop and current sense accuracy during fast switching transitions.
Monolithic temperature sense diode Provides direct die temperature measurement via VF(TSD) = 2.9 V at 25 °C and −5.7 mV/K TC for thermal shutdown coordination.
TrenchPLUS technology Delivers 6 mΩ RDSon at 5 V gate drive, enabling direct microcontroller GPIO control without level-shifting.

Applications

Lamp Switching Motor Drive Systems

Use Scenario: High-side switching of LED headlamps and interior lighting in 12 V/48 V automotive platforms.

IC Role / Device Role / Timing Role: Power switch with integrated current monitoring for open-load and short-circuit detection.

Use Value: Eliminates external current sense resistor and associated PCB area; enables real-time lamp health diagnostics via IS pin.

Use Scenario: H-bridge half-bridge leg in electric power steering (EPS) and HVAC blower motor drivers.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element with Kelvin-source layout for precise PWM control.

Use Value: Reduces conduction losses by 30% vs. comparable discrete MOSFETs; supports >20 kHz PWM without excessive heating.

Power Distribution Solenoid Drivers

Use Scenario: Smart fuse replacement in centralized junction boxes for battery disconnect and zone power control.

IC Role / Device Role / Timing Role: Current- and temperature-monitored solid-state switch with programmable trip thresholds.

Use Value: Enables digital load management via IS and TSD outputs; supports I²C-controlled protection algorithms.

Use Scenario: 12 V solenoid actuation in transmission shift control, fuel injectors, and pneumatic valves.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged driver capable of handling inductive kickback up to 0.605 J.

Use Value: Eliminates need for external flyback diode and snubber; reduces system BOM count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V V(BR)DSS, 2.2 mΩ RDSon @ 10 V, no integrated current sense or temperature diode. Requires external current sensing and thermal monitoring; suited for cost-sensitive non-automotive industrial use. Select when highest efficiency at 10 V gate drive is critical and diagnostic integration is unnecessary.
Infineon BSC014N06LS6 60 V V(BR)DSS, 1.4 mΩ RDSon @ 10 V, no Kelvin source, no integrated sense/thermal diodes. Lacks diagnostic features; higher RDSon at 5 V gate drive (~4.5 mΩ) limits logic-level compatibility. Prefer for high-frequency SMPS where ultra-low QG dominates over integrated monitoring needs.

Compared with STL220N6F7 and BSC014N06LS6, the BUK9C07-65BIT trades slightly higher RDSon for comprehensive on-die diagnostics-enabling functional safety compliance (ASIL-B ready), reducing system-level component count, and simplifying thermal/current feedback loop design in automotive ECUs.

Availability

BUK9C07-65BIT is available at Aetrix Electronics and suitable for automotive lamp switching, motor drive systems, and power distribution modules requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle support.

Supply support for BUK9C07-65BIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

This device belongs to NXP's TrenchPLUS automotive power MOSFET product line, engineered specifically for high-reliability, diagnostic-capable switching in 12 V and 48 V vehicle electrical architectures.

FAQ

What is the purpose of the separate KS (Kelvin source) and S (source) pins?

The KS pin provides a dedicated low-current return path for gate drive and current sense circuitry, eliminating voltage drop errors caused by high-current flow through the main source (S) pin. This ensures accurate RDSon-based current measurement and stable gate threshold control during fast switching, especially critical in PWM-driven motor and lamp loads.

Can the BUK9C07-65BIT be driven directly by a 3.3 V microcontroller GPIO?

No - the gate threshold voltage (VGSth) ranges from 1.0 V to 2.0 V, but achieving specified RDSon ≤7 mΩ requires VGS ≥4.5 V. At 3.3 V, RDSon increases significantly (>20 mΩ), causing excessive conduction loss. A level-shifting gate driver or 5 V GPIO is required for full performance in automotive applications.

How is the temperature sense diode (pins 3 and 5) used in practice?

Pins 3 (A) and 5 (K) form a monolithic diode whose forward voltage (VF ≈ 2.9 V at 25 °C) decreases linearly with temperature (−5.7 mV/K). By biasing the diode with a constant 250 µA current and measuring VF, the die temperature can be calculated with ±1.5 °C accuracy - enabling real-time thermal derating and overtemperature shutdown.

Does the BUK9C07-65BIT require an external flyback diode when driving inductive loads?

No - the device incorporates an integrated body diode rated for 75 A continuous source current and exhibits 0.605 J single-pulse avalanche energy. While it can safely absorb inductive kickback in many solenoid and motor applications, an external Schottky diode is recommended for repetitive high-energy transients or where reverse recovery time (trr = 60.1 ns) must be minimized.

BUK9C07-65BIT,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK-7

BUK9C07-65BIT,118 FAQ

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Please submit a Request for Quotation (RFQ) for BUK9C07-65BIT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9C07-65BIT,118 reliable?

The price and inventory of BUK9C07-65BIT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9C07-65BIT,118 is usually 5 days.

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5.How can I obtain technical support or documentation for BUK9C07-65BIT,118?

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6.How does Aetrix verify that BUK9C07-65BIT,118 is sourced from the original manufacturer or authorized distributors?

All BUK9C07-65BIT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9C07-65BIT,118 meets industry standards.

7.What is the process for return or replacement of BUK9C07-65BIT,118?

All BUK9C07-65BIT,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9C07-65BIT,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9C07-65BIT,118 part is unused and in its original packaging.

Return procedure for BUK9C07-65BIT,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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