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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics BUL1102EFP

Name: BUL1102EFP
Brand: STMicroelectronics
SKU: BUL1102EFP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUL1102EFP

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: BUL1102EFP.pdf

Description:: TRANS NPN 450V 4A TO-220FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,236

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Product details

Overview

BUL1102EFP from STMicroelectronics is a high-voltage fast-switching NPN power transistor in TO-220FP package, rated for V_CES = 1100 V, I_C = 4 A, and V_ISO = 1500 V RMS isolation. It features cellular emitter structure with planar edge termination, enabling high-speed switching (t_s = 2.5 µs, t_f = 300 ns) and rugged RBSOA for electronic lamp ballasts without external Transil™ protection.

For engineers reviewing the BUL1102EFP datasheet, BUL1102EFP pinout, BUL1102EFP application, or BUL1102EFP equivalent, key selection criteria include its 1100 V blocking capability, 1500 V isolation rating between leads and heatsink, 30 W power dissipation at T_C = 25 °C, and suitability for half-bridge current-fed 277 V mains ballast topologies.

Technical Context

This transistor employs multi-epitaxial planar technology with a cellular emitter and planar edge termination to simultaneously optimize switching speed and safe operating area robustness. Its increased intermediate layer provides intrinsic ruggedness during breakdown, allowing sustained 4 A collector current without external overvoltage clamping.

The TO-220FP package integrates full electrical isolation (1500 V RMS) between all three leads and the external heatsink, eliminating need for insulating washers in high-voltage ballast designs. Thermal resistance R_thJC is 4.2 °C/W, supporting stable operation up to T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1100 V - Enables direct use in 277 V mains half-bridge ballasts with sufficient voltage margin against transients.
I_C	4 A continuous - Supports four-lamp electronic ballast loads with thermal headroom at T_C = 25 °C.
V_ISO	1500 V RMS - Permits direct mounting to grounded heatsinks without insulation hardware in Class I safety designs.
t_s/t_f	2.5 µs / 300 ns - Reduces switching losses in 20–50 kHz lamp ballast inverters, improving efficiency and EMI profile.
R_thJC	4.2 °C/W - Defines heatsink sizing requirement: ~10 °C/W total system thermal resistance needed for 150 °C junction under 30 W dissipation.
h_FE	12–23 @ I_C = 2 A - Specifies base drive current range (400 mA typical) for reliable saturation in push-pull or half-bridge gate control.
E_AR	6 mJ - Quantifies single-pulse avalanche energy handling in inductive turn-off, critical for lamp ignition surge tolerance.

Pinout & Package

Package: TO-220FP - Full-isolation variant of TO-220 with insulated tab, rated for 1500 V RMS isolation between all leads and heatsink surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Low-side return path; must be connected to low-impedance ground reference in half-bridge configurations.
2 (Collector)	High-voltage switch node	Connects to DC bus or resonant tank; withstands 1100 V transient spikes during switching transitions.
3 (Base)	Control input	Receives TTL-compatible drive signal; requires ≥400 mA peak for full saturation at I_C = 2 A.
TAB (Isolated Heatsink Pad)	Thermal interface only	Electrically isolated from all pins; mounts directly to chassis ground without mica washer or silicone pad.

Key Features

Feature	Design Value
Cellular emitter + planar edge termination	Enables simultaneous high dV/dt immunity and fast switching without SOA collapse.
Intrinsic ruggedness via thick intermediate layer	Withstands 4 A collector current during V_CE breakdown, eliminating need for external Transil™ clamps.
1500 V RMS lead-to-heatsink isolation	Reduces bill-of-materials count and assembly steps in Class I ballast enclosures.
Wide RBSOA (Resistive Bias Safe Operating Area)	Supports reliable operation under reactive load conditions common in lamp ignition and dimming cycles.

Applications

Four-Lamp Electronic Ballast (120 V Mains)

Four-Lamp Electronic Ballast (277 V Mains)

Use Scenario: Push-pull topology driving four fluorescent lamps from 120 V AC mains via bridge rectifier and PFC stage.

IC Role / Device Role / Timing Role: High-side switch in push-pull pair, operating at 25–40 kHz with hard-switched commutation.

Use Value: 1100 V V_CES ensures margin against line surges and PFC ripple; 2.5 µs storage time minimizes cross-conduction loss.

Use Scenario: Half-bridge current-fed configuration powering four T5/T8 lamps from 277 V commercial lighting circuits.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge, handling resonant tank current with high di/dt during zero-current switching transitions.

Use Value: 1500 V isolation allows direct heatsink mounting to grounded fixture chassis; 6 mJ avalanche rating absorbs lamp ignition energy.

Lamp Ignition Surge Protection

Industrial Inductive Load Switching

Use Scenario: Cold-start phase where lamp electrodes require high-voltage pulses (up to 1 kV) to initiate conduction.

IC Role / Device Role / Timing Role: Primary switching element subjected to repetitive avalanche stress during preheat and ignition cycles.

Use Value: Intrinsic 6 mJ avalanche energy rating eliminates need for external snubbers or clamps, reducing component count and failure modes.

Use Scenario: Solid-state relay replacement in HVAC control panels switching 240 V AC inductive loads (contactors, solenoids).

IC Role / Device Role / Timing Role: Main power switch in DC-link inverter stage, turning on/off under load with controlled dv/dt.

Use Value: Wide RBSOA and 4.2 °C/W R_thJC enable reliable 4 A continuous conduction at ambient temperatures up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	600 V, 10 A IGBT in TO-220; lower V_CE(sat) but no avalanche rating	Not suitable for unclamped inductive switching; requires external clamping for lamp ignition	Preferable only if lower conduction loss is prioritized and circuit includes active clamping
BUL1203EFP	1200 V V_CES, same TO-220FP package, higher I_C = 6 A, R_thJC = 4.2 °C/W	Direct upgrade path for higher-power ballasts; identical footprint and isolation	Select when >4 A continuous current or higher voltage margin is required without layout change

Compared with BUL1102EFP, STGP10NC60KD trades avalanche ruggedness for lower conduction loss and is unsuitable for unclamped lamp ignition, while BUL1203EFP offers higher voltage and current ratings in identical isolation packaging-making it a drop-in performance upgrade.

Availability

BUL1102EFP is available at Aetrix Electronics and suitable for four-lamp electronic ballasts, industrial solid-state relays, and high-voltage DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for BUL1102EFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

BUL1102EFP belongs to ST's high-voltage power transistor product line, engineered specifically for energy-efficient, compact electronic ballasts and high-reliability industrial switching applications demanding ruggedness and isolation.

FAQ

What is the maximum allowable case temperature for continuous operation?

The BUL1102EFP has a maximum junction temperature of 150 °C and a thermal resistance R_thJC of 4.2 °C/W. With 30 W maximum power dissipation at T_C = 25 °C, derating begins above 25 °C. At T_C = 70 °C, maximum allowable power drops to approximately 19 W to maintain T_J ≤ 150 °C.

Can BUL1102EFP replace BUL1102E in existing designs?

Yes, BUL1102EFP is a direct replacement for BUL1102E in terms of electrical specs and pinout, but adds 1500 V RMS isolation between leads and heatsink. No layout change is needed, though thermal design must account for higher R_thJC (4.2 vs. 1.8 °C/W) due to internal insulation layers.

Does this transistor require external base resistors in standard ballast drivers?

Yes-base drive must be current-limited to avoid exceeding I_B = 2 A absolute maximum. A typical 400 mA base current is required for full saturation at I_C = 2 A. Standard ballast IC drivers (e.g., IRS2153D) use 10–22 Ω series resistors to limit peak base current and damp oscillation.

Is BUL1102EFP compliant with RoHS and REACH regulations?

Yes-BUL1102EFP is manufactured in ST's ECOPACK®-compliant TO-220FP package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including material declarations and test reports, is available through ST's official quality portal.

BUL1102EFP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 450 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 400mA, 2A

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 12 @ 2A, 5V

Power - Max:: 30 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

BUL1102EFP FAQ

1.How can I place an order for BUL1102EFP through Aetrix?

Please submit a Request for Quotation (RFQ) for BUL1102EFP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUL1102EFP reliable?

The price and inventory of BUL1102EFP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUL1102EFP is usually 5 days.

3.What payment methods are accepted for BUL1102EFP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUL1102EFP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUL1102EFP?

BUL1102EFP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUL1102EFP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUL1102EFP?

For technical support, including BUL1102EFP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUL1102EFP requirements.

6.How does Aetrix verify that BUL1102EFP is sourced from the original manufacturer or authorized distributors?

All BUL1102EFP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUL1102EFP meets industry standards.

7.What is the process for return or replacement of BUL1102EFP?

All BUL1102EFP units undergo pre-shipment inspection (PSI). If there is an issue with BUL1102EFP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUL1102EFP part is unused and in its original packaging.

Return procedure for BUL1102EFP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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