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onsemi BUL45D2G
- Part No.:
- BUL45D2G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
BUL45D2G.pdf
- Description:
- TRANS NPN 400V 5A TO-220
- Quantity:
- Payment:
- Shipping:
Inventory:62
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Product details
Overview
BUL45D2G from onsemi is a high-speed, high-gain NPN bipolar power transistor with integrated collector-emitter freewheeling diode and built-in antisaturation network. It delivers 5 A continuous collector current, 400 V collector-emitter sustaining voltage, and guaranteed storage time ≤900 ns - optimized for electronic lighting ballasts and PFC circuits.
For engineers reviewing the BUL45D2G datasheet, pinout, applications, or equivalent options, key selection criteria include dynamic saturation voltage (VCE(dsat) ≤0.35 V at 1 s/25°C), low base drive requirement (IB = 0.4 A for IC = 2 A), integrated diode forward voltage (VEC = 1.04 V at 1 A/25°C), and TO-220-3 package thermal resistance (RJC = 1.65 °C/W).
Technical Context
The BUL45D2G employs an H2BIP (High-Speed High-Gain Bipolar) structure that minimizes lot-to-lot spread in storage time (±150 ns), eliminating need for hFE window guarantees. Its integrated collector-emitter diode enables self-contained flyback energy recirculation in inductive switching applications.
Dynamic saturation voltage is characterized at two time points (1 s and 3 s after IB rise), reflecting antisaturation network effectiveness under sustained conduction. Switching is validated under both resistive (ton = 90 ns, toff = 1.15 µs) and inductive (ts = 0.72 µs, tf = 90 ns) loads at 300 V clamp and 15 V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 400 V - Sustaining voltage under inductive switching with 100 mA IC and 25 mH load; defines safe blocking capability in ballast/PFC clamped topologies. |
| IC Continuous | 5 A - Maximum DC collector current at TC = 25°C; supports >100 W lamp driving and boost-PFC stages up to ~200 W. |
| VCE(sat) | 0.28 V (typ) at IC = 0.8 A, IB = 80 mA - Low conduction loss enabling high-efficiency operation without forced-air cooling. |
| ts (Storage Time) | 0.72 µs (max) at 25°C - Tight, guaranteed spread ensures consistent switching timing across production lots in critical timing-critical ballasts. |
| RJC | 1.65 °C/W - Junction-to-case thermal resistance enables 75 W dissipation with modest heatsinking; supports compact board-level thermal design. |
| VEC | 1.04 V at IEC = 1 A, 25°C - Forward voltage of integrated C-E diode reduces component count and PCB area in flyback paths. |
| fT | 13 MHz - Current gain bandwidth confirms suitability for high-frequency switching (>50 kHz) in modern electronic ballasts and PFC controllers. |
Pinout & Package
Package: TO-220-3 (Case 221A, Style 1), lead-free, with tab connected to collector. Mounting flange is electrically tied to pin 2 (collector) and pin 4 (collector); pins 1–3 are base–collector–emitter respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires low drive current (IB = 0.4 A typical for 2 A IC) due to high hFE and antisaturation network. |
| 2 | Collector | Main power output terminal; electrically connected to metal tab and pin 4; handles full load current and high-voltage blocking. |
| 3 | Emitter | Power return path; referenced for base drive and used as common node in emitter-follower or grounded-emitter configurations. |
| 4 | Collector | Secondary collector connection; provides redundant current path and improved thermal/mechanical mounting stability via tab contact. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated C–E freewheeling diode | Eliminates external diode in flyback and boost converters, reducing BOM count and layout complexity while ensuring matched thermal behavior. |
| H2BIP structure with ±150 ns ts spread | Enables deterministic timing in light ballasts without per-unit hFE binning or external timing compensation networks. |
| Guaranteed dynamic VCE(sat) | Validated at 1 s and 3 s post-IB rise (e.g., 0.35 V max at 1 s/25°C), confirming antisaturation network efficacy under real-world conduction durations. |
| "6 Sigma" process control | Delivers tight parameter spreads (e.g., VCEO(sus) min = 400 V, typ = 450 V) for robust design margin without over-spec'ing heatsink or snubbers. |
| Pb-Free / RoHS compliant | Meets global environmental regulations; compatible with standard lead-free reflow profiles (TL = 260°C, 5 s). |
Applications
| Electronic Lighting Ballast | Active PFC Stage |
|---|---|
|
Use Scenario: High-frequency (20–60 kHz) resonant driver for T5/T8 fluorescent lamps with dimming and end-of-life protection. IC Role / Device Role / Timing Role: Main switch in half-bridge or push-pull topology; handles high dv/dt during zero-voltage switching transitions. Use Value: Guaranteed 0.72 µs storage time ensures consistent lamp ignition timing across temperature and manufacturing lot; integrated diode simplifies snubberless design. |
Use Scenario: Boost switch in universal-input (90–265 VAC), 100–200 W active PFC front-end for LED drivers and industrial SMPS. IC Role / Device Role / Timing Role: High-voltage, high-current switching element operating at 65–100 kHz with discontinuous/continuous conduction mode. Use Value: 400 V VCEO(sus) and 0.28 V VCE(sat) enable >95% efficiency at full load; low RJC allows direct-mount heatsinking on compact PCBs. |
| Inductive Load Driver | Capacitor Discharge Ignition (CDI) |
|
Use Scenario: Solid-state relay replacement for AC motor start windings or solenoid actuation in HVAC and appliance controls. IC Role / Device Role / Timing Role: Fast-switching power switch managing inductive kickback with integrated diode clamping. Use Value: Integrated C–E diode absorbs flyback energy without external components; 1.65 °C/W RJC sustains 5 A pulses without thermal runaway. |
Use Scenario: Primary-side switch in motorcycle or small-engine CDI systems requiring precise spark timing and high peak current. IC Role / Device Role / Timing Role: Energy storage discharge switch triggered by timing circuit; must sustain 300–400 V and deliver >5 A peak into ignition coil. Use Value: 700 V VCBO rating provides margin against inductive spikes; 10 A ICM peak current supports high-energy spark generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJ11016G | Higher VCEO (120 V), lower VCE(sat) (0.2 V), no integrated diode, TO-3 case. | Requires external flyback diode; suited for linear amplifier or lower-voltage SMPS where thermal mass outweighs switching speed needs. | Select when higher ruggedness and lower conduction loss are prioritized over integration and high-voltage blocking. |
| BU508A | Same TO-220-3 package, 1000 V VCEO, but no integrated diode, slower switching (ts ≈ 2.5 µs), higher VCE(sat) (1.5 V). | Used in CRT flyback and legacy TV horizontal deflection; lacks guaranteed dynamic VCE(sat) and H2BIP timing consistency. | Select only for ultra-high-voltage, low-frequency (<20 kHz) applications where diode integration and tight ts are not required. |
Compared with MJ11016G and BU508A, the BUL45D2G uniquely combines 400 V blocking, integrated diode, sub-1 µs storage time, and guaranteed dynamic saturation - making it the only choice for modern, compact, high-reliability electronic ballasts and mid-power PFC designs.
Availability
BUL45D2G is available at Aetrix Electronics and suitable for electronic lighting ballasts, active PFC stages, and inductive load drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for BUL45D2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The BUL45D2G belongs to onsemi's high-speed bipolar power transistor family engineered specifically for lighting control and power factor correction - emphasizing timing precision, thermal reliability, and system-level integration.
FAQ
What is the maximum continuous collector current rating for the BUL45D2G?
The BUL45D2G is rated for 5 A continuous collector current (IC) at case temperature TC = 25°C. Derating applies above 25°C at 0.6 W/°C, and peak current capability reaches 10 A under pulsed conditions (5 ms, ≤10% duty cycle). This rating is validated with the TO-220-3 package mounted to a minimum heatsink per datasheet thermal guidelines.
Does the BUL45D2G include an integrated diode, and what is its forward voltage?
Yes, the BUL45D2G integrates a collector-emitter freewheeling diode. Its forward voltage (VEC) is 1.04 V at 1 A and 25°C, 0.85 V at 0.4 A and 25°C, and 1.2 V at 2 A and 25°C. This diode eliminates the need for an external flyback diode in boost, flyback, and inductive load applications.
What is the guaranteed storage time (ts) specification for the BUL45D2G?
The BUL45D2G guarantees storage time (ts) ≤0.9 µs at 25°C and ≤2.25 µs at 125°C under inductive load conditions (IC = 2 A, IB1 = 0.4 A, Vclamp = 300 V). This tight, tested spread (±150 ns) is a core feature of its H2BIP structure and enables deterministic timing in lighting ballasts.
Is the BUL45D2G pin-compatible with standard TO-220-3 NPN transistors like the MJE13009?
No - the BUL45D2G uses TO-220-3 Case 221A Style 1 (pinout: 1=Base, 2=Collector, 3=Emitter, 4=Collector), whereas MJE13009 uses Style 2 (1=Base, 2=Emitter, 3=Collector). Pin 4 is a dedicated collector terminal on BUL45D2G and is not present on MJE13009. PCB layout and footprint must be verified against onsemi's mechanical drawing.
What thermal resistance values apply to the BUL45D2G in its TO-220-3 package?
The BUL45D2G has RJC = 1.65 °C/W (junction-to-case) and RJA = 62.5 °C/W (junction-to-ambient, unstressed). These values assume proper mounting to a heatsink with thermal interface material; actual RJA will vary significantly with PCB copper area, airflow, and enclosure design.
BUL45D2G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 400mA, 2A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 10 @ 2A, 1V
- Power - Max:
- 75 W
- Frequency - Transition:
- 13MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
BUL45D2G FAQ
1.How can I place an order for BUL45D2G through Aetrix?
Please submit a Request for Quotation (RFQ) for BUL45D2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUL45D2G reliable?
The price and inventory of BUL45D2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUL45D2G is usually 5 days.
3.What payment methods are accepted for BUL45D2G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUL45D2G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUL45D2G?
BUL45D2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUL45D2G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUL45D2G?
For technical support, including BUL45D2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUL45D2G requirements.
6.How does Aetrix verify that BUL45D2G is sourced from the original manufacturer or authorized distributors?
All BUL45D2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUL45D2G meets industry standards.
7.What is the process for return or replacement of BUL45D2G?
All BUL45D2G units undergo pre-shipment inspection (PSI). If there is an issue with BUL45D2G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUL45D2G part is unused and in its original packaging.
Return procedure for BUL45D2G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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