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onsemi BUL642D2G
- Part No.:
- BUL642D2G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
BUL642D2G.pdf
- Description:
- TRANS NPN 440V 3A TO-220
- Quantity:
- Payment:
- Shipping:
Inventory:8,538
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Product details
Overview
BUL642D2G from onsemi is a high-speed, high-gain NPN bipolar transistor with integrated collector-emitter freewheeling diode and built-in antisaturation network, rated for 825 VCES, 3 A continuous collector current, and 75 W power dissipation in TO-220AB package - designed specifically for electronic light ballast circuits requiring rugged avalanche capability (20 mJ typical) and tight dynamic parameter spreads.
For engineers reviewing the BUL642D2G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, thermal behavior, switching timing (e.g., 150 ns max storage time), diode-integrated functionality, and real-world use context in HID lamp control and inductive load switching.
Technical Context
The BUL642D2G employs an H2BIP (High Speed High Gain Bipolar) structure that minimizes storage time variation across lots (guaranteed ≤150 ns), enabling consistent turn-off performance in high-frequency ballast drivers. Its integrated freewheeling diode eliminates external diode placement while maintaining low VEC (0.8–2.0 V at 0.5–1.0 A).
Dynamic saturation voltage is fully characterized across temperature (25°C/125°C) and pulse duration (1 s/3 s), supporting reliable design of flyback and resonant converters. Avalanche energy rating (20 mJ typical) and second-breakdown SOA curves confirm robustness under inductive switching stress without snubber dependency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 825 Vdc - supports operation in 230 VAC mains-fed ballasts with margin against line transients |
| IC Continuous | 3.0 Adc - enables direct drive of 35–70 W HID lamps without parallel devices |
| PD @ TC = 25°C | 75 W - allows high-power switching with heatsink mounting in compact fixtures |
| hFE @ IC = 1 A | 45–50 - ensures low base drive current (≤200 mA) for efficient gate driver stage sizing |
| ts Max | 1400 ns - guarantees fast, predictable turn-off critical for >20 kHz ballast frequency stability |
| Avalanche Energy | 20 mJ typical - withstands repetitive inductive energy spikes without degradation in lamp ignition cycles |
| RJC | 1.6 °C/W - enables thermal modeling for case temperature control below 150°C junction limit |
Pinout & Package
Package: TO-220AB (Case 221A, Style 1), Pb-free, through-hole mount, metal tab electrically connected to collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitting terminal of NPN structure | Low-impedance return path; connects to ground or low-side switch node in half-bridge topologies |
| 2 (Base) | Control input for minority carrier injection | Receives TTL/CMOS-compatible drive; requires ≤2 A peak base current for full saturation |
| 3 (Collector / Tab) | Main current-carrying terminal and heat sink interface | Electrically tied to metal tab; must be isolated from chassis unless circuit design permits common-collector configuration |
Key Features
| Feature | Design Value |
|---|---|
| Integrated freewheeling diode | Eliminates discrete diode placement and layout parasitics in inductive load commutation paths |
| H2BIP dynamic consistency | Storage time spread tightly controlled to ≤150 ns lot-to-lot - reduces need for adaptive timing compensation |
| Low VBE(sat) | 1.1–1.5 V at IC/IB = 5–10 - lowers base drive power loss and simplifies driver IC selection |
| "Six Sigma" process control | Ensures repeatable hFE, VCE(sat), and switching times across production batches for long-term reliability |
| Characterized dynamic VCE(sat) | Validated at 125 V/300 V supply with 1 s and 3 s pulses - supports accurate thermal and SOA margining |
Applications
| Electronic HID Ballast | Inductive Load Switching |
|---|---|
Use Scenario: Driving 35–70 W metal halide or high-pressure sodium lamps in commercial lighting fixtures with 20–60 kHz square-wave excitation. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge or resonant inverter stage; handles high-voltage flyback energy during lamp ignition and steady-state regulation. Use Value: Integrated diode and 20 mJ avalanche rating eliminate external snubbers and improve system MTBF over 50,000 hours. |
Use Scenario: Controlling solenoids, relays, and DC motors in industrial automation where inductive kickback exceeds 400 V. IC Role / Device Role / Timing Role: High-voltage switching element with fast, predictable turn-off (ts ≤1400 ns) to minimize voltage overshoot and EMI. Use Value: Tight ts distribution avoids timing guard-band inflation; RJC = 1.6 °C/W enables compact heatsink integration. |
| Compact Fluorescent Lamp (CFL) Driver | DC-DC Flyback Converter |
Use Scenario: High-efficiency, low-cost CFL ballasts operating from universal AC input (90–264 VAC) with integrated PFC pre-regulation. IC Role / Device Role / Timing Role: Primary-side switch handling up to 825 V transient stress during cold-start and lamp aging phases. Use Value: VCEO(sus) = 440 V and VCES = 825 V provide dual-layer overvoltage protection without clamping components. |
Use Scenario: Isolated 24–48 V output flyback converters for telecom and industrial power supplies delivering up to 75 W. IC Role / Device Role / Timing Role: Primary switch managing high dV/dt transitions and reflected output voltage spikes during demagnetization. Use Value: Fully characterized dynamic VCE(dsat) enables precise primary current sensing and cycle-by-cycle limiting without auxiliary winding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage bipolar switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST13007D | Lower VCES (400 V), no integrated diode, higher RJC (2.0 °C/W) | Suitable only for <230 VAC systems; requires external freewheeling diode and larger heatsink | Select when cost sensitivity outweighs avalanche robustness and board space constraints |
| MJE13009 | Higher IC (12 A), but uncharacterized avalanche energy and wider ts spread (up to 2500 ns) | Better for high-current linear amplifiers; less predictable in high-frequency ballast timing loops | Prefer only if peak current demand exceeds 3 A and SOA derating is acceptable |
Compared with ST13007D and MJE13009, the BUL642D2G uniquely combines 825 V blocking, integrated diode, 20 mJ avalanche rating, and guaranteed ≤150 ns storage time - making it the only option qualified for high-reliability, high-frequency electronic ballast designs without added protection components.
Availability
BUL642D2G is available at Aetrix Electronics and suitable for electronic lighting ballasts, industrial inductive load controllers, and flyback power supplies requiring stable component supply, long lifecycle support, and Pb-free compliance.
Supply support for BUL642D2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The BUL642D2G belongs to onsemi's high-voltage bipolar transistor product line, engineered for rugged, high-frequency switching in lighting and power conversion - with emphasis on reduced design complexity via integrated functions and statistical process control.
FAQ
What is the maximum junction temperature rating for the BUL642D2G?
The BUL642D2G has a maximum junction temperature (TJ) of +150°C, with an operating range from −65°C to +150°C. This rating is validated under specified thermal resistance conditions (RJC = 1.6 °C/W) and supports reliable operation in enclosed lighting fixtures where ambient temperatures may reach 85°C at the heatsink interface.
Does the BUL642D2G include a built-in freewheeling diode, and how is it configured?
Yes, the BUL642D2G integrates a collector-emitter freewheeling diode with forward voltage VEC ranging from 0.8 V (0.5 A) to 2.0 V (1.0 A). The diode is monolithically formed within the same die and shares the emitter and collector terminals - eliminating external diode placement while preserving low-inductance current paths essential for EMI control.
What is the guaranteed maximum storage time (ts) for the BUL642D2G, and why does it matter in ballast design?
The BUL642D2G guarantees a maximum storage time of 150 ns across production lots due to its H2BIP structure. This tight specification ensures consistent turn-off timing in 20–60 kHz ballast inverters, preventing shoot-through in half-bridge configurations and enabling fixed-frequency control without adaptive dead-time adjustment.
How does the avalanche energy rating of the BUL642D2G impact system-level reliability?
The BUL642D2G delivers 20 mJ typical avalanche energy capability, allowing it to safely absorb inductive energy spikes during lamp ignition or load disconnection without failure. This eliminates reliance on external TVS diodes or RC snubbers in HID ballasts, directly improving long-term reliability and reducing bill-of-materials count.
Is the BUL642D2G pin-compatible with standard TO-220AB footprints, and what is the tab connection?
Yes, the BUL642D2G uses the industry-standard TO-220AB (Case 221A) package with 3-pin through-hole footprint. Its metal tab is electrically connected to the collector terminal - requiring electrical isolation from the heatsink unless the circuit topology explicitly uses common-collector configuration.
BUL642D2G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 440 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 16 @ 500mA, 1V
- Power - Max:
- 75 W
- Frequency - Transition:
- 13MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
BUL642D2G FAQ
1.How can I place an order for BUL642D2G through Aetrix?
Please submit a Request for Quotation (RFQ) for BUL642D2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUL642D2G reliable?
The price and inventory of BUL642D2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUL642D2G is usually 5 days.
3.What payment methods are accepted for BUL642D2G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUL642D2G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUL642D2G?
BUL642D2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUL642D2G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUL642D2G?
For technical support, including BUL642D2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUL642D2G requirements.
6.How does Aetrix verify that BUL642D2G is sourced from the original manufacturer or authorized distributors?
All BUL642D2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUL642D2G meets industry standards.
7.What is the process for return or replacement of BUL642D2G?
All BUL642D2G units undergo pre-shipment inspection (PSI). If there is an issue with BUL642D2G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUL642D2G part is unused and in its original packaging.
Return procedure for BUL642D2G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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