Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics BULB7216-1

Name: BULB7216-1
Brand: STMicroelectronics
SKU: BULB7216-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BULB7216-1

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: BULB7216-1.pdf

Description:: TRANS NPN 700V 3A I2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,298

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BULB7216-1 from STMicroelectronics is a high-voltage fast-switching NPN power transistor in I2PAK (TO-262) package, rated for V_CES = 1600 V, I_C = 3 A, and P_tot = 80 W at T_c = 25°C. It delivers very high switching speed (t_d = 0.3 µs, t_r = 1.1 µs) with tight h_FE spread and wide RBSOA, designed specifically for electronic ballasts in 277 V push-pull and 347 V half-bridge fluorescent lighting topologies.

For engineers reviewing the BULB7216-1 datasheet, BULB7216-1 pinout, BULB7216-1 application, or BULB7216-1 equivalent, key selection criteria include its 1600 V collector-emitter blocking capability under open-base conditions, 700 V V_(BR)CEO at I_C = 1 mA, low saturation voltage (V_CE(sat) = 1.0 V @ I_C = 0.25 A / I_B = 25 mA), and repetitive avalanche energy rating of 8 mJ.

Technical Context

This device uses diffused collector technology to simultaneously enhance switching speed and maintain wide reverse-biased safe operating area (RBSOA). Its dynamic parameters-including delay time (0.3 µs), rise time (1.1 µs), storage time (0.9 µs), and fall time (0.35 µs)-are tightly controlled across production lots.

The transistor supports high-voltage operation with V_CES = 1600 V and V_(BR)CES = 1600 V (I_C = 0.1 mA), while sustaining reliable conduction at I_C = 3 A continuous and I_CM = 6 A peak (t_P < 5 ms), enabling robust performance in resonant and hard-switched ballast circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1600 V - Maximum collector-emitter voltage with base open; enables direct use in 347 V half-bridge ballasts with full safety margin.
V_(BR)CEO	700 V @ I_C = 1 mA - Sustains standard line-referenced switching stress in 277 V push-pull configurations.
I_C	3 A continuous - Supports lamp currents up to 3 A in high-output fluorescent systems without derating at T_c ≤ 25°C.
V_CE(sat)	1.0 V @ I_C = 0.25 A / I_B = 25 mA - Minimizes conduction loss and thermal stress during active switching phase.
t_r + t_f	1.45 µs total - Enables high-frequency operation (>50 kHz) with low switching loss in resonant ballast designs.
E_AR	8 mJ - Repetitive avalanche energy rating ensures ruggedness against inductive turn-off transients in unclamped topologies.
R_thj-case	1.56 °C/W - Allows effective heat transfer to heatsink; supports 80 W dissipation at case temperature ≤ 25°C.

Pinout & Package

The BULB7216-1 is housed in an I2PAK (TO-262) surface-mount-compatible package with isolated mounting flange, lead-free ECOPACK® compliant construction, and mechanical dimensions per ST's official TO-262 mechanical data sheet (Rev 2, Nov 2007).

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main current-carrying terminal	Connected to high-voltage rail; electrically tied to metal tab for thermal conduction and EMI shielding.
2 (Base)	Control input	Low-impedance drive node requiring ±2 A peak current capability for fast turn-on/turn-off.
3 (Emitter)	Current return path	Reference node for gate driver; must be routed with low-inductance layout to minimize switching overshoot.

Key Features

Feature	Design Value
Low spread of dynamic parameters	Tight lot-to-lot consistency in t_d, t_r, t_s, t_f ensures predictable timing behavior across production batches.
Very high switching speed	Sub-microsecond switching (t_r = 1.1 µs, t_f = 0.35 µs) reduces transition losses in high-frequency ballast operation.
Wide RBSOA	Maintains safe operation under simultaneous high voltage and current during turn-off, critical for unclamped inductive loads.
ECOPACK® compliance	Lead-free second-level interconnect meets JEDEC JESD97; supports RoHS-compliant manufacturing and reflow profiles.

Applications

Fluorescent Lamp Ballast (277 V Push-Pull)

Fluorescent Lamp Ballast (347 V Half-Bridge)

Use Scenario: High-efficiency magnetic-less lighting control for commercial office fixtures operating from 277 V AC mains.

IC Role / Device Role / Timing Role: Main switching transistor in push-pull topology; handles bidirectional current flow and high dv/dt during zero-voltage switching transitions.

Use Value: 1600 V V_CES rating provides 5.8× overvoltage margin above 277 V RMS, ensuring long-term reliability under surge and line-variation stress.

Use Scenario: Energy-efficient lighting system for industrial high-bay installations powered by 347 V AC distribution.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; blocks full DC bus voltage during complementary conduction phase.

Use Value: 700 V V_(BR)CEO and 1.56 °C/W thermal resistance enable stable 50–65 kHz operation with minimal heatsink requirement.

Inductive Load Switching (HV Relay Replacement)

Avalanche-Rugged Power Stage

Use Scenario: Solid-state replacement for electromechanical relays controlling 400–600 V inductive loads such as solenoids and contactors.

IC Role / Device Role / Timing Role: Unclamped inductive switching element; absorbs stored energy via controlled avalanche during turn-off.

Use Value: 8 mJ repetitive avalanche energy rating eliminates need for external snubbers in moderate-energy inductive switching applications.

Use Scenario: Primary switch in resonant DC-DC converters where transient overvoltage events occur during startup or fault conditions.

IC Role / Device Role / Timing Role: Main power switch subjected to periodic overvoltage stress beyond normal V_CE rating.

Use Value: Guaranteed 1600 V V_(BR)CES and wide RBSOA allow safe operation during short-duration overvoltage spikes without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STBUL7216	Same die, TO-220 package; R_thj-case = 1.56 °C/W identical, but lower creepage/clearance vs. I2PAK.	Requires through-hole PCB assembly; less suitable for automated SMT lines or space-constrained ballast modules.	Select when legacy TO-220 footprint compatibility or manual prototyping is prioritized over thermal density.
BU508A	Lower V_CES = 1500 V, higher V_CE(sat) = 1.5 V @ I_C = 0.5 A, slower t_r = 1.5 µs.	Limited to 277 V systems only; not rated for 347 V half-bridge due to reduced blocking margin.	Acceptable for cost-sensitive 277 V ballasts where switching frequency ≤ 40 kHz and thermal headroom exists.

Compared with STBUL7216 and BU508A, BULB7216-1 offers superior surface-mount integration, identical thermal performance, and extended 347 V half-bridge capability-making it the optimal choice for next-generation compact, high-efficiency fluorescent ballasts.

Availability

BULB7216-1 is available at Aetrix Electronics and suitable for electronic ballasts, high-voltage relay replacements, and avalanche-rugged power stages requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for BULB7216-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative solutions across automotive, industrial, power, and analog markets since 1987.

The BULB7216-1 belongs to ST's high-voltage bipolar power transistor product line, engineered specifically for energy-efficient lighting control and rugged high-voltage switching in commercial and industrial environments.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The BULB7216-1 has a maximum operating junction temperature (T_J) of 150°C. With a thermal resistance of 1.56 °C/W (junction-to-case), designers must ensure case temperature remains ≤ 70°C to maintain 80 W power dissipation safely. This requires a heatsink with ≤ 50 °C/W thermal resistance when ambient is 25°C and airflow is minimal.

Can BULB7216-1 be used in avalanche mode continuously?

No-its 8 mJ repetitive avalanche energy rating applies only to single-pulse or low-duty-cycle transient events (e.g., inductive turn-off spikes). Continuous avalanche operation exceeds safe operating limits and causes irreversible junction degradation. External clamping or snubbing is required for sustained overvoltage conditions.

Is the I2PAK package electrically isolated from the collector?

Yes-the metal tab (collector terminal) is electrically isolated from the PCB mounting plane by the molded plastic body. However, the tab is not internally insulated from the die; it serves as the primary collector connection and thermal path. Electrical isolation must be maintained externally via insulating thermal pads or bushings if mounting to grounded heatsinks.

How does the low h_FE spread benefit ballast design?

The tight h_FE distribution (min 7, typ 16–35 across test conditions) ensures consistent base drive requirements across production units. This simplifies gate driver design, improves batch-to-batch luminous output stability in lighting systems, and reduces calibration overhead in mass-produced ballasts.

BULB7216-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 700 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 80mA, 800mA

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 4 @ 2A, 5V

Power - Max:: 80 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

BULB7216-1 FAQ

1.How can I place an order for BULB7216-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BULB7216-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BULB7216-1 reliable?

The price and inventory of BULB7216-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BULB7216-1 is usually 5 days.

3.What payment methods are accepted for BULB7216-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BULB7216-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BULB7216-1?

BULB7216-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BULB7216-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BULB7216-1?

For technical support, including BULB7216-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BULB7216-1 requirements.

6.How does Aetrix verify that BULB7216-1 is sourced from the original manufacturer or authorized distributors?

All BULB7216-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BULB7216-1 meets industry standards.

7.What is the process for return or replacement of BULB7216-1?

All BULB7216-1 units undergo pre-shipment inspection (PSI). If there is an issue with BULB7216-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BULB7216-1 part is unused and in its original packaging.

Return procedure for BULB7216-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…