STMicroelectronics BULB7216T4

Overview

BULB7216T4 from STMicroelectronics is a high-voltage fast-switching NPN power transistor in D2PAK (TO-263) package, rated for 1600 V V_(BR)CES, 3 A I_C, and 80 W P_tot at T_c = 25°C. It delivers very high switching speed (t_d = 0.3 µs, t_r = 1.1 µs, t_s = 0.9 µs, t_f = 0.35 µs) with tight h_FE spread and wide RBSOA, optimized for electronic ballasts in 347 V half-bridge fluorescent lighting systems.

For engineers reviewing the BULB7216T4 datasheet, BULB7216T4 pinout, BULB7216T4 application, or BULB7216T4 equivalent, key selection criteria include its 1600 V blocking capability, low storage time (0.9 µs), 1.56 °C/W junction-to-case thermal resistance, ECOPACK® lead-free compliance, and suitability for high-reliability, high-voltage switching in ballast topologies requiring stable dynamic parameter distribution across production lots.

Technical Context

This device uses diffused collector technology to simultaneously enhance switching speed and maintain robust reverse-biased safe operating area (RBSOA). Its 1600 V V_(BR)CES rating enables direct use in 347 V AC line-fed half-bridge configurations without snubber networks, while the 0.9 µs storage time minimizes switching losses during turn-off transitions.

The transistor exhibits tightly controlled h_FE (7–35 across test conditions) and low lot-to-lot parameter variation-critical for consistent performance in mass-produced electronic ballasts. Its 8 mJ repetitive avalanche energy rating supports transient overvoltage resilience in inductive switching environments typical of lamp ignition circuits.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263) - Surface-mount power package with exposed copper slug for low thermal resistance and mechanical robustness in high-power lighting modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Compared with STBUL7216 (TO-220) and BULB7216-1 (I2PAK), BULB7216T4 offers the lowest thermal resistance (1.56 °C/W) and surface-mount compatibility, enabling higher power density and automated assembly in modern ballast modules-without sacrificing 1600 V blocking or sub-1 µs storage time.

Availability

BULB7216T4 is available at Aetrix Electronics and suitable for fluorescent lamp ballasts, UV-C disinfection drivers, and high-voltage DC-DC converters requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for BULB7216T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

BULB7216T4 belongs to ST's high-voltage power transistor product line, engineered specifically for reliable, high-efficiency switching in lighting infrastructure-emphasizing voltage ruggedness, thermal performance, and production consistency for mass-market ballast applications.

FAQ

What is the maximum recommended case temperature for continuous operation?

The device is rated for 80 W total dissipation at T_c = 25°C, with thermal derating beginning above that point. The absolute maximum junction temperature is 150°C, and R_thj-case is 1.56 °C/W. For reliable continuous operation, maintain T_c ≤ 85°C to ensure T_j stays within safe limits under worst-case ambient and airflow conditions.

Does BULB7216T4 support avalanche operation in standard ballast designs?

Yes-it is rated for 8 mJ repetitive avalanche energy (L = 2 mH, C = 1.8 nF, V_BE(off) = –5 V), making it suitable for unclamped inductive switching in half-bridge and push-pull ballast topologies where lamp ignition generates flyback transients exceeding normal V_CE ratings.

Is the D2PAK package lead-free and RoHS-compliant?

Yes-BULB7216T4 is supplied in an ECOPACK®-compliant D2PAK package with lead-free second-level interconnect, conforming to RoHS Directive 2011/65/EU and JEDEC Standard JESD97. The inner box label indicates the lead-free category and soldering profile limits.

How does the h_FE variation affect base drive design in high-volume ballast production?

With h_FE ranging from 7 to 35 depending on I_C and V_CE, base drive must be designed for worst-case low gain (h_FE = 7 at I_C = 2 A) to guarantee saturation. A 50 mA base current ensures V_CE(sat) ≤ 1.5 V at I_C = 0.5 A, providing margin across all production lots without feedback compensation.