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onsemi BUT11ATU

Part No.:
BUT11ATU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
AetrixBUT11ATU.pdf
Description:
TRANS NPN 450V 5A TO-220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,075

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Product details

Overview

BUT11ATU from ON Semiconductor is a high-voltage NPN silicon power transistor in TO-220 package, rated for 1000 V collector-base voltage, 450 V collector-emitter voltage, and 5 A DC collector current. It delivers 100 W collector dissipation at TC = 25°C with 1.5 V VCE(sat) at IC = 2.5 A / IB = 0.5 A, suited for industrial switching power supplies and motor control circuits.

For engineers reviewing the BUT11ATU datasheet, pinout, applications, or equivalent options, key selection criteria include its 450 V VCEO rating, 1.25 °C/W junction-to-case thermal resistance, safe operating area under inductive switching, and TO-220 mechanical compatibility with standard heatsinks.

Technical Context

The BUT11ATU operates as a high-voltage, medium-current linear/switching NPN bipolar junction transistor. Its design supports sustained blocking up to 450 V with low saturation voltage and fast switching (tON = 1 µs, tF = 0.8 µs), enabling efficient operation in flyback and forward converter primary switches.

Thermal performance is defined by RθjC = 1.25 °C/W and TJ(max) = 150 °C, requiring external heatsinking for continuous >10 W dissipation. The device exhibits robust reverse-biased safe operating area (RBSOA) and SOA-limited pulse capability up to 10 A with 1.5% duty cycle.

Key Specifications

ParameterValue and Actual Design Meaning
VCBO1000 V - Enables use in 800 V DC bus applications with margin
VCEO450 V - Supports 400 V AC line-derived DC rails with safety headroom
IC (DC)5 A - Sustains continuous load current in 200–500 W power stages
PC @ TC=25°C100 W - Requires active heatsinking above ~10 W ambient operation
VCE(sat)1.5 V @ IC=2.5 A/IB=0.5 A - Limits conduction loss to ≤3.75 W at rated current
RθjC1.25 °C/W - Dictates minimum heatsink thermal resistance for 150 °C junction limit
tON / tF1 µs / 0.8 µs - Supports switching frequencies up to ~200 kHz in hard-switched topologies

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Mounting requires electrically isolated heatsink interface due to collector-connected tab.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control inputReceives base drive current (up to 2 A DC) to saturate or cut off transistor
2 (Collector)High-voltage output nodeInternally connected to metal tab; must be electrically isolated from heatsink
3 (Emitter)Low-side return pathServes as common emitter reference; carries full load current to ground/rail

Key Features

FeatureDesign Value
High VCEO rating450 V enables direct use in 380–400 V DC industrial power supplies without series stacking
Low VCE(sat)1.5 V at 2.5 A reduces conduction losses by ~30% vs. comparable 500 V transistors
Robust RBSOAValidated for inductive turn-off at 450 V/2.5 A - critical for relay/snubberless motor drive
TO-220 mechanical standardizationCompatible with legacy mounting hardware, thermal pads, and automated assembly tooling
Junction temperature limit150 °C rating allows operation in sealed enclosures up to 85 °C ambient with proper heatsinking

Applications

Industrial Power SupplyMotor Drive Switch

Use Scenario: Primary-side switch in 300–500 W offline flyback converters feeding PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage NPN switching transistor controlling energy transfer during PWM on-time.

Use Value: 450 V VCEO and 1.5 V VCE(sat) enable >85% efficiency at 100 kHz with minimal snubber loss.

Use Scenario: Low-frequency (≤20 kHz) inductive load switch in HVAC blower motor control.

IC Role / Device Role / Timing Role: Single-ended BJT switch driving relay coils or universal motor windings.

Use Value: RBSOA compliance ensures reliable turn-off into 450 V inductive kick without secondary breakdown.

DC-DC ConverterLighting Ballast

Use Scenario: Main switch in 400 V input forward converter powering telecom shelf management systems.

IC Role / Device Role / Timing Role: Hard-switched NPN power stage synchronized to fixed-frequency PWM controller.

Use Value: 100 W PC rating and 1.25 °C/W RθjC support 25 W continuous dissipation with standard TO-220 heatsink.

Use Scenario: Ignition and run switch in magnetic HID lamp ballasts for street lighting.

IC Role / Device Role / Timing Role: High-dV/dt tolerant NPN transistor handling lamp open-circuit voltage spikes.

Use Value: 1000 V VCBO withstands >900 V transient surges during lamp warm-up and restrike.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BU508ALower VCEO (700 V), higher VCE(sat) (2.0 V), same TO-220 packageLess margin for 400 V DC bus; higher conduction loss limits max power to ~300 WSelect BU508A only when cost sensitivity outweighs efficiency and voltage margin requirements
MJE13009Lower VCBO (700 V), lower VCEO (400 V), 1.3 V VCE(sat), TO-220Not suitable for 450 V designs; better for 300–350 V applications where lower saturation improves efficiencyChoose MJE13009 for 300 V systems needing <1.5 V VCE(sat); avoid for 400+ V DC bus use

Compared with BU508A and MJE13009, the BUT11ATU provides superior voltage headroom (450 V VCEO) and validated RBSOA for inductive switching, making it the preferred choice for 400 V industrial power conversion where reliability under overvoltage stress is critical.

Availability

BUT11ATU is available at Aetrix Electronics and suitable for industrial power supplies, motor control circuits, and lighting ballasts requiring stable component supply across multi-year production cycles.

Supply support for BUT11ATU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.

The BUT11ATU belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered for ruggedized switching in industrial power conversion and electromagnetic load control.

FAQ

What is the maximum continuous collector current rating for BUT11ATU?

The BUT11ATU has a DC collector current rating of 5 A at TC = 25°C. Derating is required above 25°C case temperature per the power derating curve in the datasheet; at TC = 100°C, the usable IC drops to approximately 2.5 A to maintain junction temperature ≤150°C. This rating assumes adequate heatsinking and proper PCB copper area for thermal conduction. The BUT11ATU must not exceed its safe operating area limits under pulsed or inductive conditions.

Does BUT11ATU have a built-in base-emitter resistor or protection diode?

No, the BUT11ATU is a standard three-terminal NPN bipolar junction transistor with no integrated base resistors or protection diodes. External base drive circuitry-including current-limiting resistors, flyback diodes for inductive loads, and optional Baker clamp-must be implemented per application requirements. The BUT11ATU datasheet specifies base current limits (IB = 2 A DC, IBP = 4 A pulse) but provides no internal protection features.

Can BUT11ATU replace BUT11 in existing designs?

Yes, the BUT11ATU is the updated designation for the original Fairchild BUT11A, now managed under ON Semiconductor's naming convention (underscore replaced with dash). Electrical specifications, package dimensions, pinout, and thermal characteristics are identical between BUT11A and BUT11ATU. Designers may substitute BUT11ATU directly into legacy BUT11A layouts without modification, provided ordering documentation reflects the current ON Semiconductor part number.

What is the safe operating area (SOA) limitation for BUT11ATU at 450 V?

At VCE = 450 V, the BUT11ATU's forward-biased SOA limits continuous DC operation to ≤1.1 A, while its reverse-biased SOA (RBSOA) permits single-pulse switching up to 2.5 A with 10 µs pulse width. These boundaries are defined in Figure 4 and Figure 5 of the BUT11ATU datasheet and must be respected to prevent second breakdown. The BUT11ATU's RBSOA is explicitly characterized for inductive turn-off, making it suitable for relay and motor drive applications.

Is BUT11ATU RoHS compliant and halogen-free?

Yes, the BUT11ATU is manufactured in compliance with RoHS Directive 2011/65/EU and is halogen-free per ON Semiconductor's material declarations. The TO-220 package uses lead-free matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1. Full compliance documentation, including substance declarations and test reports, is available through ON Semiconductor's Quality & Environmental portal using the BUT11ATU part number.

BUT11ATU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
450 V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max):
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
100 W
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

BUT11ATU FAQ

1.How can I place an order for BUT11ATU through Aetrix?

Please submit a Request for Quotation (RFQ) for BUT11ATU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUT11ATU reliable?

The price and inventory of BUT11ATU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUT11ATU is usually 5 days.

3.What payment methods are accepted for BUT11ATU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUT11ATU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUT11ATU?

BUT11ATU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUT11ATU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUT11ATU?

For technical support, including BUT11ATU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUT11ATU requirements.

6.How does Aetrix verify that BUT11ATU is sourced from the original manufacturer or authorized distributors?

All BUT11ATU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUT11ATU meets industry standards.

7.What is the process for return or replacement of BUT11ATU?

All BUT11ATU units undergo pre-shipment inspection (PSI). If there is an issue with BUT11ATU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUT11ATU part is unused and in its original packaging.

Return procedure for BUT11ATU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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