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onsemi BUT11TU
- Part No.:
- BUT11TU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
BUT11TU.pdf
- Description:
- TRANS NPN 400V 5A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:15,000
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Product details
Overview
BUT11TU from Fairchild Semiconductor is an NPN silicon power transistor designed for high-voltage switching applications, featuring 850 V collector-base voltage (VCBO), 400 V collector-emitter voltage (VCEO), and 100 W collector dissipation at TC = 25°C. It delivers 5 A DC collector current with 1.5 V VCE(sat) at IC = 3 A / IB = 0.6 A, and is commonly used in flyback converters, CRT horizontal deflection circuits, and industrial motor drive snubbers.
For engineers reviewing the BUT11TU datasheet, pinout, applications, or equivalent options, this device is selected for robust high-voltage linear/switching operation where rugged SOA, low saturation voltage, and TO-220 thermal performance are critical - especially in off-line SMPS, induction heating drivers, and legacy TV power supplies.
Technical Context
The BUT11TU operates as a high-voltage, medium-power NPN bipolar junction transistor with fixed three-terminal configuration (Base–Collector–Emitter). Its safe operating area (SOA) is defined up to 850 V and 5 A under DC conditions, with pulsed capability extending to 10 A. Thermal resistance RθjC is 1.25°C/W, enabling direct heatsink mounting for sustained 100 W dissipation.
It exhibits typical hFE of 10–30 at IC = 3 A, supports fast switching with tON = 1 µs, tSTG = 4 µs, and tF = 0.8 µs under specified test conditions (VCC = 250 V, RL = 100 Ω), and maintains stable VCE(sus) = 400 V at IC = 100 mA with IB = 0 - confirming its suitability for voltage-sustaining switching roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 850 V - maximum reverse-biased collector-base voltage before breakdown; defines primary high-voltage isolation capability |
| VCEO | 400 V - maximum collector-emitter voltage under open-base condition; sets usable DC blocking limit in switch-mode topologies |
| IC (DC) | 5 A - continuous collector current rating; determines steady-state load-handling capacity in linear or saturated switching |
| VCE(sat) | 1.5 V @ IC = 3 A, IB = 0.6 A - low saturation voltage minimizes conduction loss and self-heating during on-state operation |
| PC (TC = 25°C) | 100 W - maximum power dissipation at case temperature 25°C; requires heatsink for >10 W continuous use |
| RθjC | 1.25°C/W - junction-to-case thermal resistance; enables calculation of junction temperature rise under known case temperature |
| tON / tF | 1 µs / 0.8 µs - fast turn-on and fall times support operation up to ~500 kHz in hard-switched applications |
Pinout & Package
Package: TO-220 (3-lead, straight lead, insulated tab). Mounting surface is electrically connected to Collector. Standard JEDEC TO-220 outline with 2.54 mm lead pitch and 15.90 mm body length.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to drive transistor into saturation; requires ≥0.6 A for full 3 A collector conduction |
| 2 (Collector) | High-voltage output terminal | Connected to heatsink via metal tab; carries full switched load current and withstands up to 850 V reverse bias |
| 3 (Emitter) | Current return path | Low-side reference node; must be tied to ground or low-side rail; carries full emitter current (IC + IB) |
Key Features
| Feature | Design Value |
|---|---|
| High VCBO rating | 850 V enables use in 400 V AC mains-derived circuits with margin for transients and ringing |
| Robust SOA | DC SOA extends to 400 V × 5 A; pulse SOA supports 850 V × 10 A for short durations - ideal for snubberless flyback designs |
| Low VCE(sat) | 1.5 V at rated current reduces conduction losses by ~30% vs. comparable 2–3 V devices, improving efficiency in high-current stages |
| Fast switching | 1 µs turn-on and 0.8 µs fall time allow reliable operation in 200–500 kHz SMPS without excessive switching loss penalty |
| TO-220 thermal interface | 1.25°C/W RθjC permits 70°C junction rise at 56 W dissipation - compatible with standard extruded aluminum heatsinks |
Applications
| Switch-Mode Power Supply (Flyback) | CRT Horizontal Deflection |
|---|---|
Use Scenario: Off-line 50–100 W flyback converter for monitor or adapter supply, operating at 20–50 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Main high-voltage switching transistor handling primary-side energy transfer and voltage regulation feedback loop. Use Value: 400 V VCEO and 1.5 V VCE(sat) minimize conduction loss and enable efficient operation without active clamping. |
Use Scenario: Horizontal output stage in analog CRT television receivers, driving flyback transformer at 15.734 kHz. IC Role / Device Role / Timing Role: Linearly modulated high-voltage switch controlling beam sweep timing and EHT generation. Use Value: 850 V VCBO withstands flyback spikes >600 V; SOA supports repetitive high-peak-current pulses without secondary breakdown. |
| Induction Heating Driver | Industrial Motor Snubber Circuit |
Use Scenario: Half-bridge inverter stage for 20–100 kHz resonant heating systems, switching 300–600 V DC bus. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in series-resonant tank driver. Use Value: 100 W PC rating and 1.25°C/W RθjC support continuous 4–5 A RMS current with forced-air cooling. |
Use Scenario: Clamped inductive load switching in solenoid or relay drivers, where back-EMF exceeds 400 V. IC Role / Device Role / Timing Role: Voltage-sustaining switch absorbing inductive kickback via external RC snubber. Use Value: 400 V VCEO(sus) ensures reliable sustaining behavior at 100 mA leakage, preventing premature avalanche failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BUT11A | Higher VCBO (1000 V) and VCEO (450 V); otherwise identical pinout, package, and SOA | Preferred in 230 V AC-input systems with higher transient margins or >400 V bus designs | Select BUT11A when design requires >850 V blocking or >400 V sustained collector-emitter voltage |
| MJE13009 | Lower VCBO (700 V), higher hFE (min 8), same TO-220 package; VCE(sat) = 1.2 V @ IC = 4 A | Better suited for lower-voltage, higher-gain applications like ballast drivers or low-cost SMPS | Choose MJE13009 only if VCBO ≥ 700 V suffices and gain-critical base drive reduction is needed |
Compared with BUT11A and MJE13009, the BUT11TU offers optimal balance of 850 V ruggedness, 1.5 V saturation voltage, and proven reliability in legacy CRT and industrial flyback designs - making it the preferred choice where VCBO margin above 700 V is required but 1000 V is unnecessary.
Availability
BUT11TU is available at Aetrix Electronics and suitable for high-voltage power switching, CRT deflection circuitry, and industrial motor control applications requiring stable component supply across long-lifecycle embedded programs.
Supply support for BUT11TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a leading designer and manufacturer of discrete semiconductors and power management ICs, acquired by ON Semiconductor in 2016. Known for rugged, high-reliability power transistors and MOSFETs.
The BUT11TU belongs to Fairchild's high-voltage bipolar transistor family, engineered specifically for demanding analog switching roles in CRT, industrial power, and legacy SMPS systems where SOA integrity and voltage margin are paramount.
FAQ
What is the maximum continuous collector current for BUT11TU?
The BUT11TU is rated for 5 A DC collector current (IC) at TC = 25°C. Derating is required above 25°C case temperature per the power derating curve - at TC = 100°C, maximum IC drops to approximately 2.5 A. This rating assumes proper heatsinking and stable thermal interface.
Is BUT11TU pin-compatible with BUT11A?
Yes, the BUT11TU and BUT11A share identical TO-220 package, pinout (Base–Collector–Emitter), and mechanical dimensions. They differ only in absolute maximum ratings: BUT11A specifies VCBO = 1000 V and VCEO = 450 V, while BUT11TU specifies VCBO = 850 V and VCEO = 400 V. Substitution is electrically safe if voltage margins permit.
What is the typical DC current gain (hFE) of BUT11TU?
The BUT11TU exhibits typical hFE of 10–30 at IC = 3 A and VCE = 5 V, as shown in Figure 1 of the datasheet. Minimum hFE is not specified, but design practice assumes hFE ≥ 10 for saturation drive calculations - requiring ≥0.3 A base current to sustain 3 A collector current.
Can BUT11TU be used in avalanche mode?
No - the BUT11TU is not rated or characterized for repetitive avalanche operation. Its datasheet specifies VCEO(sus) = 400 V (with IB = 0), indicating controlled sustaining behavior, not unclamped inductive switching. For avalanche-rated alternatives, consider devices explicitly tested per UIS standards like FQP series MOSFETs.
What thermal interface material is recommended for BUT11TU in TO-220 mounting?
A silicone-based thermal compound (e.g., Dow Corning TC-5022 or equivalent) with 0.5–1.0 W/m·K conductivity is recommended for BUT11TU mounted to an aluminum heatsink. Use mica or ceramic insulator if electrical isolation is required; ensure mounting torque does not exceed 0.5 N·m to avoid package damage.
BUT11TU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 600mA, 3A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- 100 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
BUT11TU FAQ
1.How can I place an order for BUT11TU through Aetrix?
Please submit a Request for Quotation (RFQ) for BUT11TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUT11TU reliable?
The price and inventory of BUT11TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUT11TU is usually 5 days.
3.What payment methods are accepted for BUT11TU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUT11TU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUT11TU?
BUT11TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUT11TU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUT11TU?
For technical support, including BUT11TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUT11TU requirements.
6.How does Aetrix verify that BUT11TU is sourced from the original manufacturer or authorized distributors?
All BUT11TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUT11TU meets industry standards.
7.What is the process for return or replacement of BUT11TU?
All BUT11TU units undergo pre-shipment inspection (PSI). If there is an issue with BUT11TU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUT11TU part is unused and in its original packaging.
Return procedure for BUT11TU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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